Optoelectronic component and method of producing an optoelectronic component

Abstract

An optoelectronic component includes a semiconductor chip, the semiconductor chip emitting infrared radiation; a reflector that reflects the infrared radiation of the semiconductor chip; and a filter configured in the form of a coating, the filter being transparent for the infrared radiation of the semiconductor chip, wherein visible light striking the optoelectronic component being absorbed to at least 75 %.

1 - 13 . (canceled) 
     
     
         14 . An optoelectronic component comprising:
 a semiconductor chip, the semiconductor chip emitting infrared radiation;   a reflector that reflects the infrared radiation of the semiconductor chip; and   a filter configured in the form of a coating, the filter being transparent for the infrared radiation of the semiconductor chip,   wherein visible light striking the optoelectronic component being absorbed to at least 75%.   
     
     
         15 . The optoelectronic component as claimed in  claim 14 , wherein the thickness of the filter is at most 50 μm. 
     
     
         16 . The optoelectronic component as claimed in  claim 14 , wherein at least 90% of the infrared radiation emitted by the semiconductor chip passes through the filter. 
     
     
         17 . The optoelectronic component as claimed in  claim 14 , wherein the filter comprises a matrix material with colorant. 
     
     
         18 . The optoelectronic component as claimed in  claim 17 , wherein the matrix material comprises an epoxy resin, silicone, plastic or lacquer. 
     
     
         19 . The optoelectronic component as claimed in  claim 14 , wherein the reflector is coated with silver or aluminum. 
     
     
         20 . The optoelectronic component as claimed in  claim 14 , wherein the reflector is coated with gold. 
     
     
         21 . The optoelectronic component as claimed in  claim 20 , wherein a combined system consisting of the filter and the gold coating of the reflector absorbs visible light striking the optoelectronic component to at least 75%. 
     
     
         22 . The optoelectronic component as claimed in  claim 14 , wherein the semiconductor chip is covered with the filter. 
     
     
         23 . The optoelectronic component as claimed in  claim 22 , wherein the reflector is coated with gold, and the filter absorbs visible light to at least 75%. 
     
     
         24 . A method of producing an optoelectronic component comprising:
 placing an optoelectronic semiconductor chip on a carrier,   electrically contacting the semiconductor chip,   placing a reflector on the carrier, and   applying a filter by applying a coating.   
     
     
         25 . The method as claimed in  claim 24 , wherein the filter is applied after placement and contacting of the semiconductor chip. 
     
     
         26 . The method as claimed in  claim 24 , wherein the filter is applied before placement and contacting of the semiconductor chip.