Method for manufacturing semiconductor apparatus

Abstract

This is to provide a method for manufacturing a semiconductor apparatus which can shorten the manufacturing process of a semiconductor device, particularly a fan-out package without causing sealing defects such as voids or warpage, and can accomplish reduction in the manufacturing cost or improve in yield. There is provided a method for manufacturing a semiconductor apparatus which comprises preparing a semiconductor device-mounted substrate onto which a plurality of flip chip type semiconductor devices have been mounted onto a wiring layer formed on the substrate, collectively sealing a device-mounted surface of the semiconductor device-mounted substrate with a sealing material attached with a base material for sealing a semiconductor having a base material and a sealing resin layer containing an uncured or semi-cured thermosetting resin component formed on one surface of the base material, and removing the substrate from the collectively sealed semiconductor device-mounted substrate.

1 . A method for manufacturing a semiconductor apparatus which comprises
 preparing a semiconductor device-mounted substrate onto which a plurality of flip chip type semiconductor devices have been mounted onto a wiring layer formed on the substrate,   collectively sealing a device-mounted surface of the semiconductor device-mounted substrate with a sealing material attached with a base material for sealing a semiconductor having a base material and a sealing resin layer containing an uncured or semi-cured thermosetting resin component formed on one surface of the base material, and   removing the substrate from the collectively sealed semiconductor device-mounted substrate.   
     
     
         2 . The method for manufacturing a semiconductor apparatus according to  claim 1 , wherein
 collective sealing with the sealing material attached with a base material for sealing a semiconductor is carried out at a molding temperature of 80° C. to 200° C., and a molding pressure of 0.2 to 30 MPa under reduced pressure of a vacuum pressure of 10,000 Pa or lower.   
     
     
         3 . The method for manufacturing a semiconductor apparatus according to  claim 1 , wherein
 electrodes are formed on a surface exposed by removal of the substrate after removing the substrate.   
     
     
         4 . The method for manufacturing a semiconductor apparatus according to  claim 2 , wherein
 electrodes are formed on a surface exposed by removal of the substrate after removing the substrate.   
     
     
         5 . The method for manufacturing a semiconductor apparatus according to  claim 3 , wherein
 the semiconductor apparatus is divided into individual pieces by dicing after forming the electrodes.   
     
     
         6 . The method for manufacturing a semiconductor apparatus according to  claim 4 , wherein
 the semiconductor apparatus is divided into individual pieces by dicing after forming the electrodes.   
     
     
         7 . The method for manufacturing a semiconductor apparatus according to  claim 1 , wherein
 the base material is a fiber-containing resin base material in which a thermosetting resin composition is impregnated into a fiber base material and cured, and having a linear expansion coefficient of 3 to 20 ppm/° C. in the range of 0° C. to 200° C.   
     
     
         8 . The method for manufacturing a semiconductor apparatus according to  claim 2 , wherein
 the base material is a fiber-containing resin base material in which a thermosetting resin composition is impregnated into a fiber base material and cured, and having a linear expansion coefficient of 3 to 20 ppm/° C. in the range of 0° C. to 200° C.   
     
     
         9 . The method for manufacturing a semiconductor apparatus according to  claim 3 , wherein
 the base material is a fiber-containing resin base material in which a thermosetting resin composition is impregnated into a fiber base material and cured, and having a linear expansion coefficient of 3 to 20 ppm/° C. in the range of 0° C. to 200° C.   
     
     
         10 . The method for manufacturing a semiconductor apparatus according to  claim 4 , wherein
 the base material is a fiber-containing resin base material in which a thermosetting resin composition is impregnated into a fiber base material and cured, and having a linear expansion coefficient of 3 to 20 ppm/° C. in the range of 0° C. to 200° C.   
     
     
         11 . The method for manufacturing a semiconductor apparatus according to  claim 5 , wherein
 the base material is a fiber-containing resin base material in which a thermosetting resin composition is impregnated into a fiber base material and cured, and having a linear expansion coefficient of 3 to 20 ppm/° C. in the range of 0° C. to 200° C.   
     
     
         12 . The method for manufacturing a semiconductor apparatus according to  claim 6 , wherein
 the base material is a fiber-containing resin base material in which a thermosetting resin composition is impregnated into a fiber base material and cured, and having a linear expansion coefficient of 3 to 20 ppm/° C. in the range of 0° C. to 200° C.   
     
     
         13 . The method for manufacturing a semiconductor apparatus according to  claim 1 , wherein
 the sealing resin layer is a material which contains an inorganic filler, an amount of the inorganic filler is 80 to 95% by mass based on a whole composition for forming the sealing resin layer, and a minimum melt viscosity is 0.1 to 300 Pa·s at 100° C. to 200° C. in a state before curing the sealing resin layer.   
     
     
         14 . The method for manufacturing a semiconductor apparatus according to  claim 2 , wherein
 the sealing resin layer is a material which contains an inorganic filler, an amount of the inorganic filler is 80 to 95% by mass based on a whole composition for forming the sealing resin layer, and a minimum melt viscosity is 0.1 to 300 Pa·s at 100° C. to 200° C. in a state before curing the sealing resin layer.   
     
     
         15 . The method for manufacturing a semiconductor apparatus according to  claim 3 , wherein
 the sealing resin layer is a material which contains an inorganic filler, an amount of the inorganic filler is 80 to 95% by mass based on a whole composition for forming the sealing resin layer, and a minimum melt viscosity is 0.1 to 300 Pa·s at 100° C. to 200° C. in a state before curing the sealing resin layer.   
     
     
         16 . The method for manufacturing a semiconductor apparatus according to  claim 5 , wherein
 the sealing resin layer is a material which contains an inorganic filler, an amount of the inorganic filler is 80 to 95% by mass based on a whole composition for forming the sealing resin layer, and a minimum melt viscosity is 0.1 to 300 Pa·s at 100° C. to 200° C. in a state before curing the sealing resin layer.   
     
     
         17 . The method for manufacturing a semiconductor apparatus according to  claim 7 , wherein
 the sealing resin layer is a material which contains an inorganic filler, an amount of the inorganic filler is 80 to 95% by mass based on a whole composition for forming the sealing resin layer, and a minimum melt viscosity is 0.1 to 300 Pa·s at 100° C. to 200° C. in a state before curing the sealing resin layer.   
     
     
         18 . The method for manufacturing a semiconductor apparatus according to  claim 1 , wherein
 underfill between the flip chip type semiconductor device and the wiring layer is not carried out in advance, but carried out the underfill simultaneously with the collectively sealing a sealing material attached with a base material for sealing a semiconductor.   
     
     
         19 . The method for manufacturing a semiconductor apparatus according to  claim 1 , wherein
 a fan-out wafer level package is manufactured as the semiconductor apparatus.