Damage free enhancement of dopant diffusion into a substrate

Abstract

A method of doping a substrate. The method may include implanting a dose of a helium species into the substrate through a surface of the substrate at an implant temperature of 300° C. or greater. The method may further include depositing a doping layer containing a dopant on the surface of the substrate, and annealing the substrate at an anneal temperature, the anneal temperature being greater than the implant temperature.

What is claimed is: 
     
         1 . A system, comprising:
 an etch chamber, arranged to process a substrate, the etch chamber comprising a plasma chamber;   a transfer chamber coupled to the etch chamber;   a dopant deposition chamber, the dopant deposition chamber coupled to the transfer chamber and further coupled to a dopant source, the dopant deposition chamber configured to perform a chemical vapor deposition of a dopant species; and   a capping layer chamber, coupled to the transfer chamber, the capping layer chamber comprising a chemical vapor deposition chamber, a plasma chemical vapor deposition chamber, or physical vapor deposition chamber.   
     
     
         2 . The system of  claim 1 , the capping layer chamber being further coupled to a capping material source, the capping material source comprising a liquid source or a gas source. 
     
     
         3 . The system of  claim 2 , the capping material source comprising a source of silicon, a source of nitrogen, or a source of both silicon and nitrogen. 
     
     
         4 . The system of  claim 1 , the dopant source comprising a source of arsenic, boron, phosphorous, or silicon. 
     
     
         5 . The system of  claim 1 , wherein the transfer chamber is arranged to transfer the substrate between the etch chamber, the dopant deposition chamber, and the capping layer chamber, while not breaking vacuum. 
     
     
         6 . The system of  claim 1 , further comprising a hot implant chamber, coupled to a helium source, the hot implant chamber being further coupled to the transfer chamber, wherein the transfer chamber is arranged to transfer the substrate between the etch chamber, the hot implant chamber, the dopant deposition chamber, and the capping layer chamber, while not breaking vacuum. 
     
     
         7 . The system of  claim 6 , the hot implant chamber comprising:
 a plasma generator, generating helium ions, the helium ions comprising an energy of 200 eV to 5000 eV; and   a substrate heater generating a substrate temperature of 300° C. or greater.   
     
     
         8 . The system of  claim 1 , further comprising:
 an annealing chamber, coupled to the transfer chamber and having a heater generating a substrate temperature of greater than 300° C., wherein the transfer chamber is arranged to transfer the substrate between the etch chamber, the annealing chamber, the dopant deposition chamber, and the capping layer chamber, while not breaking vacuum.   
     
     
         9 . The system of  claim 6 , further comprising:
 an annealing chamber, coupled to the transfer chamber and having a heater generating a substrate temperature of greater than 300° C., wherein the transfer chamber is arranged to transfer the substrate between the etch chamber, the hot implant chamber, the dopant deposition chamber, the capping layer chamber, and the annealing chamber, while not breaking vacuum.   
     
     
         10 . A method of doping a substrate, comprising:
 cleaning the substrate in an etch chamber of a cluster tool;   moving the substrate from the etch chamber to a dopant deposition chamber of the cluster tool via a transfer chamber, while not breaking vacuum;   depositing a dopant on the substrate in the dopant deposition chamber;   moving the substrate to a capping layer chamber of the cluster tool via the transfer chamber, while not breaking vacuum; and   depositing a capping layer on the substrate in the capping layer chamber.   
     
     
         11 . The method of  claim 10 , further comprising directing a dose of a helium species into the substrate through a surface of the substrate at an implant temperature of 300° C. or greater, before the depositing the capping layer. 
     
     
         12 . The method of  claim 11 , wherein the directing the dose of the helium species takes place before the depositing the dopant. 
     
     
         13 . The method of  claim 11 , wherein the directing the dose of the helium species takes place after the depositing the dopant. 
     
     
         14 . The method of  claim 11 , wherein the directing the dose of helium takes place in a hot implant chamber, the method further comprising:
 transferring the substrate between the dopant deposition chamber and the hot implant chamber via the transfer chamber, while not breaking vacuum between the directing the dose of the helium species and the depositing the dopant.   
     
     
         15 . The method of  claim 10 , further comprising annealing the substrate at an anneal temperature, the anneal temperature being greater than the implant temperature, after the depositing the capping layer. 
     
     
         16 . The method of  claim 15 , wherein the annealing the substrate takes place in an anneal chamber, the method further comprising:
 transferring the substrate between the dopant deposition chamber and the anneal chamber via the transfer chamber, while not breaking vacuum between the depositing the capping layer and the annealing the substrate.   
     
     
         17 . The method of  claim 16 , further comprising directing a dose of a helium species into the substrate through a surface of the substrate at an implant temperature of 300° C. or greater, before the depositing the capping layer, wherein the directing the dose of helium takes place in a hot implant chamber. 
     
     
         18 . The method of  claim 17 , further comprising:
 transferring the substrate between the capping layer deposition chamber and the hot implant chamber via the transfer chamber, while not breaking vacuum between the directing the dose of the helium species and the depositing the dopant.