Substrate treating method and apparatus used therefor

Abstract

Disclosed is a substrate treating method for performing a heat treatment of a substrate having a treated film formed thereon in a heat treating space of a heat treating chamber. The method includes an exhaust step of exhausting gas within the heat treating space formed by a cover enclosing surroundings of a heat treating plate; an inert gas supply step of supplying inert gas from an upper portion of the heat treating space into the heat treating space and supplying inert gas into a gap between an outer peripheral surface of the heat treating plate and an inner wall of the cover; and a heat treating step of performing the heat treatment of the substrate in the heat treating space. The heat treating step is performed after the exhaust step and the inert gas supply step.

What is claimed is: 
     
         1 . A substrate treating method for performing a heat treatment of a substrate having a treated film formed thereon in a heat treating space of a heat treating chamber, the substrate treating method comprising:
 an exhaust step of exhausting gas within the heat treating space formed by a cover enclosing surroundings of a heat treating plate;   an inert gas supply step of supplying inert gas from an upper portion of the heat treating space into the heat treating space and supplying inert gas into a gap between an outer peripheral surface of the heat treating plate and an inner wall of the cover; and   a heat treating step of performing the heat treatment of the substrate in the heat treating space, the heat treating step being performed after the exhaust step and the inert gas supply step.   
     
     
         2 . The substrate treating method according to  claim 1 , wherein
 the heat treating step is performed while exhaust from through holes into which support pins moving forward/backward from the heat treating plate are inserted is only performed and exhaust from an exhaust port of the cover stops.   
     
     
         3 . The substrate treating method according to  claim 1 , wherein
 the treated film is made from a directed self-assembly material.   
     
     
         4 . The substrate treating method according to  claim 2 , wherein
 the treated film is made from a directed self-assembly material.   
     
     
         5 . A substrate treating apparatus for performing a heat treatment of a substrate having a treated film formed thereon in a heat treating space, the substrate treating apparatus comprising:
 a heat treating plate where the substrate to be treated is placed;   a cover that is erected outwardly from an outer peripheral surface of the heat treating plate by a gap, and encloses surroundings of the heat treating plate to form a heat treating space inside thereof;   an upper inert gas supplying device that supplies inert gas from an upper portion of the heat treating space into the heat treating space;   openings formed in the cover in communication with the gap;   a lower inert gas supplying device that supplies inert gas into the openings;   an exhaust device that exhausts gas within the heat treating space; and   a controller that causes the exhaust device to exhaust the gas within the heat treating space, and causes the upper inert gas supplying device and the lower inert gas supplying device to supply the inert gas, and thereafter performs the heat treatment of the substrate placed on the heat treating plate.   
     
     
         6 . The substrate treating method according to  claim 5 , wherein
 the cover includes the openings formed therein at two positions that are opposite to each other across the center of the heat treating plate in plan view.   
     
     
         7 . The substrate treating method according to  claim 5 , wherein
 the heat treating plate includes through holes into which support pins for delivering the substrate are inserted in communication with the heat treating space,   the cover includes an exhaust port in communication with the heat treating space,   the exhaust device performs exhaust from the through holes and exhaust from the exhaust port, and   the controller performs the heat treatment of the substrate while causing the exhaust device to stop the exhaust from the exhaust port and to perform only the exhaust from the through holes.   
     
     
         8 . The substrate treating method according to  claim 6 , wherein
 the heat treating plate includes through holes into which support pins for delivering the substrate are inserted in communication with the heat treating space,   the cover includes an exhaust port in communication with the heat treating space,   the exhaust device performs exhaust from the through holes and exhaust from the exhaust port, and   the controller performs the heat treatment of the substrate while causing the exhaust device to stop the exhaust from the exhaust port and to perform only the exhaust from the through holes.   
     
     
         9 . The substrate treating method according to  claim 5 , wherein
 the treated film is made from a directed self-assembly material.   
     
     
         10 . The substrate treating method according to  claim 6 , wherein
 the treated film is made from a directed self-assembly material.   
     
     
         11 . The substrate treating method according to  claim 7 , wherein
 the treated film is made from a directed self-assembly material.   
     
     
         12 . The substrate treating method according to  claim 8 , wherein
 the treated film is made from a directed self-assembly material.   
     
     
         13 . The substrate treating method according to  claim 5 , wherein
 the lower inert gas supplying device allows regulation of a flow rate of the nitrogen gas.   
     
     
         14 . The substrate treating method according to  claim 6 , wherein
 the lower inert gas supplying device allows regulation of a flow rate of the nitrogen gas.   
     
     
         15 . The substrate treating method according to  claim 7 , wherein
 the lower inert gas supplying device allows regulation of a flow rate of the nitrogen gas.   
     
     
         16 . The substrate treating method according to  claim 8 , wherein
 the lower inert gas supplying device allows regulation of a flow rate of the nitrogen gas.   
     
     
         17 . The substrate treating method according to  claim 9 , wherein
 the lower inert gas supplying device allows regulation of a flow rate of the nitrogen gas.   
     
     
         18 . The substrate treating method according to  claim 10 , wherein
 the lower inert gas supplying device allows regulation of a flow rate of the nitrogen gas.   
     
     
         19 . The substrate treating method according to  claim 11 , wherein
 the lower inert gas supplying device allows regulation of a flow rate of the nitrogen gas.   
     
     
         20 . The substrate treating method according to  claim 12 , wherein
 the lower inert gas supplying device allows regulation of a flow rate of the nitrogen gas.