Method and apparatus for low temperature selective epitaxy in a deep trench

Abstract

The present disclosure generally relate to a cluster tool and methods for forming an epitaxial layer on a semiconductor device. In one implementation, the cluster tool includes a transfer chamber, a pre-clean chamber coupled to the transfer chamber, a plasma-cleaning chamber coupled to the transfer chamber, a deposition chamber coupled to the transfer chamber, an etch chamber coupled to the transfer chamber, and a thermal process chamber coupled to the transfer chamber.

1 . A cluster tool for processing a semiconductor substrate, comprising:
 a transfer chamber;   a pre-clean chamber coupled to the transfer chamber;   a plasma cleaning chamber coupled to the transfer chamber;   a deposition chamber coupled to the transfer chamber; and   a thermal process chamber coupled to the transfer chamber.   
     
     
         2 . The cluster tool of  claim 1 , wherein the pre-clean chamber is operable to remove a native oxide from the substrate. 
     
     
         3 . The cluster tool of  claim 2 , wherein the pre-clean chamber has an inductively coupled plasma source operable to produce electrically neutral radicals. 
     
     
         4 . The cluster tool of  claim 3 , wherein the inductively coupled plasma source is a remote plasma source physically separated from the pre-clean chamber. 
     
     
         5 . The cluster tool of  claim 2 , wherein the pre-clean chamber has a capacitively coupled plasma source using He and NF 3 . 
     
     
         6 . The cluster tool of  claim 5 , wherein the pre-clean chamber has a substrate support coupling to a bias RF power supply. 
     
     
         7 . The cluster tool of  claim 1 , wherein the plasma cleaning chamber has an inductively coupled plasma source operable to produce electrically neutral radicals. 
     
     
         8 . The cluster tool of  claim 1 , wherein the deposition chamber is an epitaxy chamber operable to perform a selective epitaxial deposition process. 
     
     
         9 . The cluster tool of  claim 8 , wherein the epitaxy chamber comprises a liquid precursor vaporizer. 
     
     
         10 . The cluster tool of  claim 1 , further comprising a plasma etch chamber coupled to the transfer chamber. 
     
     
         11 . The cluster tool of  claim 1 , wherein the thermal process chamber comprises a radiation source having a plurality of heat elements. 
     
     
         12 . The cluster tool of  claim 7 , wherein the inductively coupled plasma source includes a set of coil antennas. 
     
     
         13 . The cluster tool of  claim 1 , where the deposition chamber is an epitaxy chamber comprising a liquid precursor vaporizer, the pre-clean chamber is a remote plasma chamber, and the plasma cleaning chamber comprises an inductively coupled plasma source that includes a set of coil antennas. 
     
     
         14 . A cluster tool for processing a semiconductor substrate, comprising:
 a transfer chamber coupled to a load-lock chamber;   a first cleaning chamber coupled to the transfer chamber, the first cleaning chamber comprising a capacitively coupled plasma source and a substrate support coupling to a bias RF power supply;   a second cleaning chamber coupled to the transfer chamber, the second cleaning chamber comprising an inductively coupled plasma source;   an epitaxy chamber coupled to the transfer chamber, the epitaxy chamber comprising a liquid precursor vaporizer; and   a thermal process chamber coupled to the transfer chamber.   
     
     
         15 . The cluster tool of  claim 14 , wherein the capacitively coupled plasma source is operable to remove a native oxide from the substrate using a plasma containing He and NF 3 . 
     
     
         16 . The cluster tool of  claim 14 , wherein the inductively coupled plasma source is operable to produce hydrogen-containing radicals. 
     
     
         17 . The cluster tool of  claim 14 , further comprising an etch chamber coupled to the transfer chamber. 
     
     
         18 . The cluster tool of  claim 14 , wherein the inductively coupled plasma source comprises a set of coil antennas. 
     
     
         19 . A cluster tool for processing a semiconductor substrate, comprising:
 a transfer chamber coupled to a load-lock chamber;   a first cleaning chamber coupled to the transfer chamber, the first cleaning chamber comprising a remote plasma source and a heated gas distribution plate;   a second cleaning chamber coupled to the transfer chamber, the second cleaning chamber comprising an inductively coupled plasma source having a set of antenna coils;   an epitaxy chamber coupled to the transfer chamber, the epitaxy chamber comprising a liquid precursor vaporizer; and   a thermal process chamber coupled to the transfer chamber.   
     
     
         20 . The cluster tool of  claim 19 , wherein the thermal process chamber is a thermal oxidation chamber.