US2018224916A1PendingUtilityA1

Hybrid computing module

Assignee: DE ROCHEMONT L PIERREPriority: Jul 9, 2012Filed: Dec 18, 2017Published: Aug 9, 2018
Est. expiryJul 9, 2032(~5.9 yrs left)· nominal 20-yr term from priority
G06F 3/065G06F 2212/1024G06F 2212/65G06F 13/1673G06F 13/1689G06F 2212/621Y10S257/00G06F 1/28G06F 9/30098G06F 1/3203G06F 13/24G06F 13/1605G11C 7/1072G06F 1/26G06F 3/0625G06F 13/42G06F 1/324G06F 13/36G06F 15/80G06F 9/30043G06F 12/1009G06F 9/3802G06F 2213/0038G06F 3/0685G06F 12/0862G06F 2212/602G06F 12/0875G06F 9/3001G06F 12/0815G06F 3/0619G06F 2212/452H10P 95/00H10W 90/00H10W 10/0143H10W 10/17H01L 25/0652H01L 2924/14H01L 27/0207H01L 25/16H01L 21/76229H01L 2924/3011H01L 21/00H01L 2924/0002H01L 21/84H10D 89/10H10D 86/01Y02D10/00
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Claims

Abstract

A hybrid system-on-chip provides a plurality of memory and processor die mounted on a semiconductor carrier chip that contains a fully integrated power management system that switches DC power at speeds that match or approach processor core clock speeds, thereby allowing the efficient transfer of data between off-chip physical memory and processor die.

Claims

exact text as granted — not AI-modified
What is claimed: 
     
         1 . A hybrid computing module, comprising:
 a semiconductor carrier including a substrate adapted to provide electrical communication, through electrically conducting traces and passive circuit network filtering elements formed upon the carrier substrate, between a fully integrated power management circuit module having a resonant gate transistor to switch electrical power to drive the transfer of data and digital process instruction sets between a plurality of discrete semiconductor die mounted upon the semiconductor carrier, wherein the plurality of discrete semiconductor die include:   at least one microprocessor die forming a central processing unit (CPU), and   a memory bank having at least one memory die,   wherein the fully integrated power management module is adapted to synchronously switch power at speeds that match a clock speed of the at least one microprocessor.   
     
     
         2 . The hybrid computing module of  claim 1 , wherein the plurality of semiconductor die additionally provide memory controller functionality. 
     
     
         3 . The hybrid computing module of  claim 2 , wherein the memory controller functionality is field programmable. 
     
     
         4 . The hybrid computing module of  claim 2 , wherein the memory controller functionality is provided by a static address memory controller. 
     
     
         5 . The hybrid computing module of  claim 1 , wherein the plurality of semiconductor die additionally include a graphics processing unit (GPU). 
     
     
         6 . The hybrid computing module of  claim 1 , wherein the plurality of semiconductor die additionally include an application-specific integrated circuit (ASIC). 
     
     
         7 . The hybrid computing module of  claim 1 , wherein some of the plurality of semiconductor die are mounted as a stack on the semiconductor carrier. 
     
     
         8 . The hybrid computing module of  claim 1 , further comprising a plurality of semiconductor die mounted upon the hybrid computing module that provide GPU and field programmability. 
     
     
         9 . The hybrid computing module of  claim 8 , wherein the CPU and GPU semiconductor die comprise multiple processing cores. 
     
     
         10 . The hybrid computing module of  claim 1 , wherein the fully integrated power management module is mounted on the semiconductor carrier. 
     
     
         11 . The hybrid computing module of  claim 1 , wherein the fully integrated power management module switches power at speeds greater than 250 MHz. 
     
     
         12 . The hybrid computing module of  claim 1 , wherein the fully integrated power management module is formed upon the semiconductor carrier. 
     
     
         13 . The hybrid computing module of  claim 1 , wherein the substrate forming the semiconductor carrier is a semiconductor. 
     
     
         14 . The hybrid computing module of  claim 13 , wherein active circuitry is embedded in the semiconductor substrate that manages USB, audio, video and other communications bus interface protocols. 
     
     
         15 . The hybrid computing module of  claim 1 , wherein the microprocessor die contains multiple processing cores. 
     
     
         16 . The hybrid computing module of  claim 1 , wherein the plurality of discrete semiconductor die are configured as a chip stack. 
     
     
         17 . The hybrid computing module of  claim 1 , wherein the semiconductor carrier is in electrical communication with an electro-optic drivers that interface the hybrid computing module with other systems by means of fiber-optic network. 
     
     
         18 . The hybrid computing module of  claim 17 , wherein the electro-optical interface contains an active layer that forms a 3D electron gas. 
     
     
         19 . The hybrid computing module of  claim 1 , wherein the hybrid computing module contains a plurality of central processing units, each functioning as distributed processing cores. 
     
     
         20 . The hybrid computing module of  claim 1 , wherein the hybrid computing module contains a plurality of central processing units that are configured to function as a fault-tolerant computing system. 
     
     
         21 . The hybrid computing module of  claim 1 , wherein the hybrid computing module is in thermal contact with a thermoelectric device. 
     
     
         22 . The hybrid computing module of  claim 1 , wherein the microprocessor die has cache memory that occupies less than 15% of a footprint for the microprocessor die.

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