Low ESR Capacitor

Abstract

An improved capacitor is provided wherein the improved capacitor has improved ESR. The capacitor has a fluted anode and an anode wire extending from the fluted anode. A dielectric is on the fluted anode. A conformal cathode is on the dielectric and a plated metal layer is on the carbon layer.

1 - 32 . (canceled) 
     
     
         33 . A method for forming a capacitor comprising:
 anodizing an anode to form a dielectric on said anode wherein said anode comprises flutes and an anode wire extending therefrom;   forming a conductive node on said anode wire;   forming a first conductive layer on said dielectric wherein said first conductive layer and said conductive node are in electrical contact with said anode wire;   applying voltage to said anode wire; and   electrochemically depositing conductive polymer on said first conductive layer to form a conformal cathode.   
     
     
         34 . The method for forming a capacitor of  claim 33  wherein said conformal cathode has an average thickness of no more than 40 microns. 
     
     
         35 . The method for forming a capacitor of  claim 34  wherein said conformal cathode has an average thickness of no more than 20 microns. 
     
     
         36 . The method for forming a capacitor of  claim 35  wherein said conformal cathode has an average thickness of no more than 10 microns. 
     
     
         37 . The method for forming a capacitor of  claim 33  wherein said conformal cathode has a deviation in thickness of no more than 50% of an average thickness. 
     
     
         38 . The method for forming a capacitor of  claim 37  wherein said conformal cathode has a deviation in thickness of no more than 40% of an average thickness. 
     
     
         39 . The method for forming a capacitor of  claim 38  wherein said conformal cathode has a deviation in thickness of no more than 30% of an average thickness. 
     
     
         40 . The method for forming a capacitor of  claim 39  wherein said conformal cathode has a deviation in thickness of no more than 20% of an average thickness. 
     
     
         41 . The method for forming a capacitor of  claim 40  wherein said conformal cathode has a deviation in thickness of no more than 10% of an average thickness. 
     
     
         42 . The method for forming a capacitor of  claim 99  wherein said forming said metal layer comprises electroplating said metal layer by current passing through said conductive node. 
     
     
         43 . The method for forming a capacitor  claim 42  wherein said metal layer comprises a metal selected from the group consisting of copper, silver, nickel and gold. 
     
     
         44 . The method for forming a capacitor of  claim 43  wherein said metal layer comprises copper. 
     
     
         45 . The method for forming a capacitor of  claim 33  wherein said forming said first conductive layer comprises chemical polymerization. 
     
     
         46 . The method for forming a capacitor of  claim 33  wherein said first conductive layer comprises a conductive layer selected from MnO 2  and a conductive polymer. 
     
     
         47 . The method for forming a capacitor of  claim 46  wherein said conductive polymer is selected from the group consisting of polyaniline, polypyrol and polythiophene. 
     
     
         48 . The method for forming a capacitor of  claim 47  wherein said conductive polymer comprises polydioxythiophene. 
     
     
         49 . The method for forming a capacitor of  claim 33  wherein said anode comprises a valve metal or a conductive oxide of a valve metal. 
     
     
         50 . The method for forming a capacitor of  claim 49  wherein said valve metal or a conductive oxide of a valve comprises a material selected from the group consisting of Al, W, Ta, Nb, NbO, Ti, Zr, and Hf. 
     
     
         51 . The method for forming a capacitor of  claim 50  wherein said valve metal or a conductive oxide of a valve is selected from tantalum and niobium. 
     
     
         52 . The method for forming a capacitor of  claim 33  wherein said flutes have a width of no more than 0.022 inches. 
     
     
         53 . The method for forming a capacitor of  claim 52  wherein said flutes have a width of no more than 0.019 inches. 
     
     
         54 . The method for forming a capacitor of  claim 53  wherein said flutes have a width of no more than 0.016 inches. 
     
     
         55 . The method for forming a capacitor of  claim 54  wherein said flutes have a width of at least more than 0.004 inches. 
     
     
         56 . The method for forming a capacitor of  claim 33  wherein said flutes have a ratio of depth to width of at least 0.60:1. 
     
     
         57 . The method for forming a capacitor of  claim 33  further comprising forming a carbon containing layer on said conformal coating. 
     
     
         58 . The method for forming a capacitor of  claim 57  wherein said carbon containing layer has a thickness of at least 1 micron to no more than 20 microns. 
     
     
         59 . The method for forming a capacitor of  claim 100  wherein said metal layer has a thickness of at least 2 microns. 
     
     
         60 . The method for forming a capacitor of  claim 33  wherein said forming said first conductive layer comprises chemical polymerization. 
     
     
         61 . The method for forming a capacitor of  claim 60  wherein said chemical polymerization comprises polymerization of a polythiophene. 
     
     
         62 . The method for forming a capacitor of  claim 33  wherein said conformal cathode comprises a polythiophene. 
     
     
         63 . The method for forming a capacitor of  claim 62  wherein said polythiophene comprises dioxythiophene. 
     
     
         64 . The method for forming a capacitor of  claim 100  wherein a ratio of a surface area in said flutes of said plated metal layer at an adjacent cathode layer interface to and external anode surface at a cathode layer interface is greater than 75%. 
     
     
         65 . The method for forming a capacitor of  claim 64  wherein a ratio of a surface area in said flutes of said plated metal layer at an adjacent cathode layer interface to and external anode surface at a cathode layer interface is greater than 85%. 
     
     
         66 . The method for forming a capacitor of  claim 65  wherein a ratio of a surface area in said flutes of said plated metal layer at an adjacent cathode layer interface to and external anode surface at a cathode layer interface is greater than 95%. 
     
     
         67 - 98 . (canceled) 
     
     
         99 . The method for forming a capacitor of  claim 33  further comprising forming a metal layer in electrical contact with said conformal cathode. 
     
     
         100 . The method for forming a capacitor of  claim 57  further comprising forming a metal layer on said carbon layer. 
     
     
         101 . A method for forming a capacitor comprising:
 anodizing an anode to form a dielectric on said anode;   forming a conductive node in direct electrical contact with said anode;   forming a conductive layer on said dielectric wherein said conductive layer and said conductive node are in electrical contact with said anode wire;   applying voltage to said anode wire; and   electrochemically depositing a metal layer on said conductive layer.   
     
     
         102 . The method for forming a capacitor of  claim 101  wherein said anode further comprises an anode wire extending therefrom. 
     
     
         103 . The method for forming a capacitor of  claim 102  wherein said conductive node is on said anode wire. 
     
     
         104 . The method for forming a capacitor of  claim 101  wherein said forming said conductive layer comprises electrochemically depositing conductive polymer. 
     
     
         105 . The method for forming a capacitor of  claim 104  wherein said electrochemically depositing conductive polymer is through said conductive node.