Standoff members for semiconductor package

Abstract

Semiconductor packages having support members are provided. Support members can mitigate damage to a semiconductor die mounted on a semiconductor package. In some embodiments, an arrangement of support packages can be formed at respective locations of a frame layer that serves as a stiffener for the semiconductor package. Each support member in the arrangement can be formed from a same material of the frame layer or a different material. In some embodiments, a support member can be mounted or otherwise coupled to an exposed surface of the frame layer. In addition or in other embodiments, a support member can be mounted on a surface that supports the semiconductor die. The arrangement of support members can include support members comprising a first material and/or other support members formed from respective materials. A support member can be formed from a metal, a metal alloy, a semiconductor, a polymer, a composite material, or a porous material.

1 . A semiconductor package, comprising:
 a substrate layer including a first surface that defines a perimeter;   a frame layer forming a first interface with the substrate layer at the first surface, the frame layer including a second surface opposite to the first surface, the second surface defines an inner perimeter and an outer perimeter, each edge of the outer perimeter coplanar with an edge of the perimeter of the substrate layer; and   a support member forming a second interface with the frame layer at the second surface and extending in a direction perpendicular to the substrate layer from the second interface to a distal end opposite to the second interface, the support member further extends from a first location in a first edge of the outer perimeter to a second location in a first edge of the inner perimeter and further extends from the first location to a third location in the first edge of the outer perimeter, wherein the first edge of the outer perimeter is adjacent to the first edge of the inner perimeter, the support member to withstand a force oriented along the direction perpendicular to the substrate layer.   
     
     
         2 . The semiconductor package of  claim 1 , wherein a distance from the second interface to the distal end opposite to the second interface has a magnitude in a range from about 50 μm to about 2.0 mm. 
     
     
         3 . The semiconductor package of  claim 1 , wherein the support member further extends from the third location in the first edge to a fourth location in a second edge of the outer perimeter, and wherein the support member further extends from the fourth location in the second edge of the outer perimeter to the first location in the outer perimeter. 
     
     
         4 . The semiconductor package of  claim 1 , wherein the support member comprises a second frame layer, and wherein the second interface defines a second inner perimeter and a second outer perimeter. 
     
     
         5 . The semiconductor package of  claim 4 , wherein the frame layer comprises a rigid material and the second frame layer comprises a flexible material, and wherein the rigid material comprises one of a semiconductor, a metal, a metallic alloy, a ceramic material, or a polymer, and further wherein the flexible material comprises one of a second polymer or a porous material. 
     
     
         6 . The semiconductor package of  claim 1 , further comprising a second support member, a third support member, and a fourth support member, wherein the outer perimeter forms a first corner, a second corner, and a third corner,
 wherein the second support member forms a third interface with the frame layer at the second surface, the third interface includes the first corner and the second support member to withstand a second force oriented along the direction perpendicular to the substrate layer,   wherein the third support member forms a fourth interface with the frame layer at the second surface, the fourth interface includes the second corner and the third support member to withstand a third force oriented along the direction perpendicular to the substrate layer,   wherein the fourth support member forms a fifth interface with the frame layer at the second surface, the fifth interface includes the third corner and the fourth support member to withstand a fourth force oriented along the direction perpendicular to the substrate layer.   
     
     
         7 . The semiconductor package of  claim 1 , wherein the support member comprises one of a rigid material or a flexible material. 
     
     
         8 . The semiconductor package of  claim 1 , wherein the support member comprises a rigid material including one of a semiconductor, a metal, a metallic alloy, a ceramic material, or a polymer. 
     
     
         9 . The semiconductor package of  claim 1 , wherein the support member comprises a composite material having one of a polymer matrix or a non-polymer matrix. 
     
     
         10 . The semiconductor package of  claim 1 , wherein the support member comprises a porous material comprising one of a semiconductor matrix or a polymer matrix. 
     
     
         11 . The semiconductor package of  claim 1 , wherein the support member adheres to the frame layer to form the second interface, the support member comprising a plastic sheet. 
     
     
         12 . The semiconductor package of  claim 1 , wherein the support member has a shape of a rectangular parallelepiped, a rod, a dome, a hemi-sphere, or a hemi-ellipsoid. 
     
     
         13 . A method of making a semiconductor package, comprising:
 providing a package substrate having a first substrate layer and a second substrate layer opposite to the first substrate layer, the first substrate layer defines a perimeter;   providing a frame layer coupled to the first substrate layer, the frame layer including a surface opposite to the first substrate layer, wherein the surface defines an inner perimeter and an outer perimeter, each edge of the outer perimeter coplanar with an edge of the perimeter of the substrate layer; and   providing at least one support member positioned on at least one respective location on the surface, wherein a first support member of the at least one support member is positioned at a first location adjacent a side of the outer perimeter and extends from a portion of the surface along a direction substantially perpendicular to the surface, the first support member having a first substantially uniform thickness along the direction.   
     
     
         14 . The method of  claim 13 , wherein providing the frame layer comprises positioning the frame layer on the first substrate layer using a pick-and-place technique; and
 bonding the frame layer to a portion of the first substrate layer, the frame layer comprising a rigid material including one of a metal, a semiconductor, a metallic alloy, a ceramic material, a composite material, or a polymer.   
     
     
         15 . The method of  claim 13 , wherein the bonding comprising supplying an amount of heat to the frame layer on the first substrate layer during a defined time interval. 
     
     
         16 . The method of  claim 13 , wherein providing the at least one support member comprises mounting the first support member at the first location, the mounting comprising adhering the first support member to a portion of the surface including the first location, wherein the first support member comprises a flexible material. 
     
     
         17 . The method of  claim 13 , wherein providing the frame layer comprises forming the frame layer from a first rigid material, and wherein providing the at least one support member comprises forming the first support member on the frame layer at the first location. 
     
     
         18 . The method of  claim 17 , wherein forming the first support member comprises depositing a first amount of the first rigid material or a second amount of a second rigid material at the first location, and wherein the first rigid material comprises one of a first metal, a first semiconductor, a first metallic alloy, a first ceramic material, a first composite material, or a first polymer, and wherein the second rigid material comprises a second metal, a second semiconductor, a second metallic alloy, a second ceramic material, a second composite material, or a second polymer. 
     
     
         19 . An electronic device, comprising:
 at least one semiconductor die coupled to a package substrate via at least one respective group of interconnects, the package substrate comprising a substrate layer including a first surface that defines a perimeter;   a frame layer forming a first interface with the substrate layer at the first surface, the frame layer including a second surface opposite to the first surface, the second surface defines an inner perimeter and an outer perimeter, each edge of the outer perimeter coplanar with an edge of the perimeter of the substrate layer; and   a support member forming a second interface with the frame layer at the second surface and extending in a direction perpendicular to the substrate layer from the second interface to a distal end opposite to the second interface, the support member further extends from a first location in a first edge of the outer perimeter to a second location in a first edge of the inner perimeter and further extends from the first location in the to a third location in the first edge of the outer perimeter, wherein the first edge of the outer perimeter is adjacent to the first edge of the inner perimeter, the support member to withstand a force oriented along the direction perpendicular to the substrate layer.   
     
     
         20 . The electronic device of  claim 19 , wherein the support member further extends from the third location in the first edge to a fourth location in a second edge of the outer perimeter, and wherein the support member further extends from the fourth location in the second edge of the outer perimeter to the first location in the outer perimeter. 
     
     
         21 . The electronic device of  claim 19 , wherein the support member comprises a second frame layer, and wherein the second interface defines a second inner perimeter and a second outer perimeter. 
     
     
         22 . The electronic device of  claim 21 , wherein the frame layer comprises a rigid material and the second frame layer comprises a flexible material, and wherein the rigid material comprises one of a semiconductor, a metal, a metallic alloy, a ceramic material, or a polymer, and further wherein the flexible material comprises one of a second polymer or a porous material. 
     
     
         23 . The electronic device of  claim 19 , wherein the support member comprises a rigid material including one of a semiconductor, a metal, a metallic alloy, a ceramic material, or a polymer. 
     
     
         24 . The electronic device of  claim 19 , wherein the support member comprises a composite material having one of a polymer matrix or a non-polymer matrix. 
     
     
         25 . The electronic device of  claim 19 , wherein the support member comprises a porous material comprising one of a semiconductor matrix or a polymer matrix.