Highly purified carbon nanotubes and method of their preparation

Abstract

Highly purified carbon nanotubes (CNT) having virtually no carbonaceous impurities (amorphous carbon) nor inorganic impurities (metal and metal oxides), and methods of their preparation are described. The purified CNT feature excellent electrical, mechanical, and thermal properties due to the near total absence of detrimental impurities. The CNT starting material is preferably in the form of wafer, film, or buckypaper for efficient diffusion of purifying media. The highly pure CNT are prepared by heat treating a CNT starting material in a specified amount of oxygen, then treating the CNT in a solution comprising water and acid, or further heat treating the CNT in an atmosphere comprising chlorine (Cl 2 ). Extremely low levels of inorganic impurities may be achieved by treating sequentially with a treatment solution followed by chlorine. Removal of chloride from purified CNT may be achieved by further treating the chlorine-treated material in an atmosphere comprising hydrogen (H 2 ).

What is claimed is: 
     
         1 . A method for purifying carbon nanotubes, comprising the steps of:
 (a) obtaining a carbon nanotube starting material that contains impurities;   (b) removing amorphous carbon from the carbon nanotube starting material by heat treating the carbon nanotube starting material between 300 and 550° C. for 20 to 80 hours in a heating chamber, wherein the heating chamber contains a specified amount of oxygen and inert gas, and contains less than 1 ppm of water vapor and other reactive species; and   (c) removing inorganic impurities from the carbon nanotube starting material by treating the carbon nanotube in an atmosphere comprising chlorine (O 2 ).   
     
     
         2 . The method of  claim 1 , wherein in step (b), the molar ratio of the amount of oxygen provided during the heat treating to the amount of carbon removed is between 1 and 8. 
     
     
         3 . The method of  claim 1 , wherein in step (a), the carbon nanotube starting material is in the form of a wafer, film, or buckypaper having a thickness less than 50 micrometers. 
     
     
         4 . The method of  claim 1 , wherein the treating in an atmosphere comprising chlorine is conducted at a temperature between 600° C. and 1200° C. 
     
     
         5 . The method of  claim 1 , wherein after treating in an atmosphere comprising chlorine (Cl 2 ), the carbon nanotube starting material is further treated in an atmosphere comprising hydrogen (H 2 ). 
     
     
         6 . The method of  claim 5 , wherein the treating in an atmosphere comprising hydrogen is conducted at a temperature between 600° C. and 1200° C. 
     
     
         7 . A method for purifying carbon nanotubes, comprising the steps of:
 (a) obtaining a carbon nanotube starting material that contains impurities;   (b) removing amorphous carbon from the carbon nanotube starting material by heat treating the carbon nanotube starting material between 300 and 550° C. for 20 to 80 hours in a heating chamber, wherein the heating chamber contains a specified amount of oxygen and inert gas, and contains less than 1 ppm of water vapor and other reactive species;   (c) removing inorganic impurities from the carbon nanotube starting material by treating it with a treatment solution comprising water and one or more acids; and   (d) removing inorganic impurities from the carbon nanotube starting material by treating it in an atmosphere comprising chlorine (Cl 2 ).   
     
     
         8 . The method of  claim 7 , wherein in step (c), the one or more acids comprise hydrochloric acid (HCl) and/or hydrofluoric acid (HF). 
     
     
         9 . The method of  claim 7 , wherein in step (c) the treatment solution further comprises an organic solvent. 
     
     
         10 . The method of  claim 9 , wherein the organic solvent is an alcohol selected from the group consisting of methanol, ethanol, propanol, or any combination thereof. 
     
     
         11 . The method of  claim 7 , wherein the treating in an atmosphere comprising chlorine is conducted at a temperature between 600° C. and 1200° C. 
     
     
         12 . The method of  claim 7 , wherein after treating in an atmosphere comprising chlorine (Cl 2 ), the carbon nanotube starting material is further treated in an atmosphere comprising hydrogen (H 2 ). 
     
     
         13 . The method of  claim 12 , wherein the treating in an atmosphere comprising hydrogen is conducted at a temperature between 600° C. and 1200° C.