Power module semiconductor device and inverter equipment, and fabrication method of the power module semiconductor device, and metallic mold

Abstract

The power module semiconductor device ( 2 ) includes: an insulating substrate ( 10 ); a first pattern ( 10 a ) (D) disposed on the insulating substrate ( 10 ); a semiconductor chip (Q) disposed on the first pattern; a power terminal (ST, DT) and a signal terminal (CS, G, SS) electrically connected to the semiconductor chip; and a resin layer ( 12 ) configured to cover the semiconductor chip and the insulating substrate. The signal terminal is disposed so as to be extended in a vertical direction with respect to a main surface of the insulating substrate.

1 . A power module semiconductor device comprising:
 an insulating substrate;   a first pattern of a copper plate layer disposed on the insulating substrate;   a semiconductor chip disposed on the first pattern;   a power terminal and a signal terminal electrically connected to the semiconductor chip; and   a resin layer configured to cover the semiconductor chip and the insulating substrate, wherein   the signal terminal is disposed so as to be extended in a vertical direction with respect to a main surface of the insulating substrate.   
     
     
         2 - 20 . (canceled)