Seed crystal holder, crystal growing device, and crystal growing method

Abstract

A seed crystal holder according to the present invention for growing a crystal by a solution method, and that includes a seed crystal made of silicon carbide; a holding member above the seed crystal; a bonding agent configured to fix the seed crystal and the holding member; and a sheet member made of carbon which is interposed in the bonding agent in a thickness direction, and which has an outer periphery smaller than an outer periphery of the seed crystal in a plan view.

1 . A seed crystal holder for growing a crystal by a solution method, comprising:
 a seed crystal made of silicon carbide;   a holding member above the seed crystal;   a bonding agent configured to fix the seed crystal and the holding member; and   a sheet member made of carbon which is interposed in the bonding agent in a thickness direction,   wherein the sheet member comprises a through hole in the thickness direction, and an inside of the through hole is filled with a part of the bonding agent.   
     
     
         2 . The seed crystal holder according to  claim 1 ,
 wherein the sheet member has an outer periphery larger than an outer periphery of the holding member in a plan view.   
     
     
         3 . The seed crystal holder according to  claim 1 ,
 wherein the bonding agent comprises a cavity constituted with the seed crystal.   
     
     
         4 . The seed crystal holder according to  claim 3 ,
 wherein the bonding agent further comprises a pore thereinside, and the cavity is larger than the pore, the pore being located between the sheet member and the holding member.   
     
     
         5 . The seed crystal holder according to  claim 1 ,
 wherein the sheet member further comprises a plurality of through holes, and the number of the plurality of through holes increases as going to a center of the sheet member from an outer circumference.   
     
     
         6 . The seed crystal holder according to  claim 1 ,
 wherein a part of the bonding agent covers a side surface of the sheet member.   
     
     
         7 . The seed crystal holder according to  claim 1 ,
 wherein the sheet member includes carbon particles and silicon as a component.   
     
     
         8 . The seed crystal holder according to  claim 1 ,
 wherein the sheet member includes silicon in a state of silicon carbide.   
     
     
         9 . The seed crystal holder according to  claim 1 ,
 wherein the bonding agent includes silicon as a component.   
     
     
         10 . The seed crystal holder according to  claim 9 ,
 wherein the silicon included in the part of the bonding agent between the sheet member and the holding member is more than the silicon included in the part of the bonding agent between the sheet member and the seed crystal.   
     
     
         11 . A crystal growing device, comprising:
 a melting crucible that keeps a solution for growing a crystal; and   the seed crystal holder according to  claim 1 .   
     
     
         12 . A crystal growing method, comprising:
 a first preparation step of preparing a melting crucible and a solution of silicon including carbon which is kept in the melting crucible;   a second preparation step of preparing the seed crystal holder according to  claim 1 ; and   a growing step of bringing a lower surface of the seed crystal in contact with the solution kept in the melting crucible, and then raising a holding member upwardly, so as to grow a silicon carbide crystal from the solution on the lower surface of the seed crystal.   
     
     
         13 . The crystal growing method according to  claim 12 ,
 wherein the second preparation step is a step of preparing the seed crystal holder using a bonding agent including carbon particles as the bonding agent, and   further comprising a step of immersing a part of the bonding agent together with the seed crystal in the solution kept in the melting crucible between the second preparation step and the growing step.   
     
     
         14 . The crystal growing method according to  claim 13 ,
 further comprising a step of immersing the sheet member together with the seed crystal in the solution kept in the melting crucible between the second preparation step and the growing step.