US2018155372A1PendingUtilityA1

Tin compound, method of synthesizing the same, tin precursor compound for atomic layer deposition, and method of forming tin-containing material film

Assignee: SAMSUNG ELECTRONICS CO LTDPriority: Dec 2, 2016Filed: Nov 30, 2017Published: Jun 7, 2018

Est. expiryDec 2, 2036(~10.4 yrs left)· nominal 20-yr term from priority

Inventors:Seung-Min Ryu Youn Soo Kim Jae-Soon Lim Youn-Joung Cho Myong Woon Kim Kang-Yong Lee Sang Ick Lee Sang Yong Jeon

C23C 16/45553C07F 7/2284C23C 16/18C23C 16/407

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References

Claims

Abstract

A tin compound, tin precursor compound for atomic layer deposition (ALD), a method of forming a tin-containing material film, and a method of synthesizing a tin compound, the tin compound being represented by Chemical Formula (I): wherein R 1 , R 2 , Q 1 , Q 2 , Q 3 , and Q 4 are each independently a Cl to C4 linear or branched alkyl group.

Claims

exact text as granted — not AI-modified

1 . A tin compound represented by Chemical Formula (I): 
       
         
           
           
               
               
           
         
         wherein R 1 , R 2 , Q 1 , Q 2 , Q 3 , and Q 4  are each independently a C1 to C4 linear or branched alkyl group. 
       
     
     
         2 . The tin compound as claimed in  claim 1 , wherein Q 1 , Q 2 , Q 3 , and Q 4  are each independently a methyl group, an ethyl group, a n-propyl group, or an isopropyl group. 
     
     
         3 . The tin compound as claimed in  claim 1 , wherein Q 1 , Q 2 , Q 3 , and Q 4  are the same and are each a methyl group, an ethyl group, a n-propyl group, or an isopropyl group. 
     
     
         4 . The tin compound as claimed in  claim 3 , wherein R 1  and R 2  are each independently a methyl group, an ethyl group, a n-propyl group, or an isopropyl group. 
     
     
         5 . The tin compound as claimed in  claim 4 , wherein R 1  and R 2  are the same and are each a methyl group, an ethyl group, a n-propyl group, or an isopropyl group. 
     
     
         6 . The tin compound as claimed in  claim 1 , wherein:
 R 1  and R 2  are each a methyl group, and   Q 1 , Q 2 , Q 3 , and Q 4  are the same and are each a methyl group or an isopropyl group.   
     
     
         7 . The tin compound as claimed in  claim 1 , wherein the tin compound is in a liquid state at 20° C. 
     
     
         8 . A tin precursor compound for atomic layer deposition (ALD), the tin precursor compound having a structure represented by Chemical Formula (I): 
       
         
           
           
               
               
           
         
         wherein R 1 , R 2 , Q 1 , Q 2 , Q 3 , and Q 4  are each independently a C1 to C4 linear or branched alkyl group. 
       
     
     
         9 . The tin precursor compound as claimed in  claim 8 , wherein R 1  and R 2  are each independently a methyl group, an ethyl group, a n-propyl group, or an isopropyl group. 
     
     
         10 . The tin precursor compound as claimed in  claim 9 , wherein Q 1 , Q 2 , Q 3 , and Q 4  are the same and are each a methyl group, an ethyl group, a n-propyl group, or an isopropyl group. 
     
     
         11 .- 30 . (canceled) 
     
     
         31 . The tin precursor compound as claimed in  claims 9 , R1 and R2 are the same and are each a methyl group, an ethyl group, a n-propyl group, or an isopropyl group. 
     
     
         32 . The tin precursor compound as claimed in  claim 8 , wherein Q 1 , Q 2 , Q 3 , and Q 4  are each independently a methyl group, an ethyl group, a n-propyl group, or an isopropyl group. 
     
     
         33 . The tin precursor compound as claimed in  claim 8 , wherein:
 R 1  and R 2  are each a methyl group, and   Q 1 , Q 2 , Q 3 , and Q 4  are the same and are each a methyl group or an isopropyl group.   
     
     
         34 . The tin precursor compound as claimed in  claim 8 , wherein the tin compound is in a liquid state at 20° C. 
     
     
         35 . A tin precursor compound for depositing tin-containing material film, the tin precursor compound having a structure represented by Chemical Formula (I):
 &lt;Chemical Formula (I)&gt;   
       
         
           
           
               
               
           
         
         wherein R 1 , R 2 , Q 1 , Q 2 , Q 3 , and Q 4  are each independently a C1 to C4 linear or branched alkyl group. 
       
     
     
         36 . The tin precursor compound as claimed in  claim 35 , wherein Q 1 , Q 2 , Q 3 , and Q 4  are the same and are each a methyl group, an ethyl group, a n-propyl group, or an isopropyl group. 
     
     
         37 . The tin precursor compound as claimed in  claim 35 , wherein R 1  and R 2  are the same and are each a methyl group, an ethyl group, a n-propyl group, or an isopropyl group. 
     
     
         38 . The tin precursor compound as claimed in  claim 35 , wherein the tin compound is in a liquid state at 20° C. 
     
     
         39 . The tin precursor compound as claimed in  claim 35 , wherein the tin precursor compound is Sn[N( i Pr) 2 ] 2 Me 2  or Sn[N(Me) 2 ] 2 Me 2 . 
     
     
         40 . The tin precursor compound as claimed in  claim 35 , wherein the tin precursor compound is synthesized by a method comprising:
 obtaining SnX 2 R 2  by reacting SnX 4  with SnR 4  according to Reaction Formula (I); and   obtaining Sn(NQ 2 ) 2 R 2  by reacting SnX 2 R 2  with LiNQ 2  according to Reaction Formula (II),
   SnX 4 +SnR 4 →2SnX 2 R 2    &lt;Reaction Formula (I)&gt;
 
   SnX 2 R 2 +2LiNQ 2 →Sn(NQ 2 ) 2 R 2 +2LiX   &lt;Reaction Formula (II)&gt;
 
   wherein:   X includes fluorine, chlorine, bromine, or iodine, and   R and Q are each independently a C1 to C4 linear or branched alkyl group.

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