Method for manufacturing a semiconductor device having a dummy section

Abstract

There is provided a semiconductor device comprising a semiconductor substrate having an active area in which a plurality of active elements are formed, and a non-active area excepting the active area; at least one electrode pad electrically connected to any of the active elements. At least one Through Silicon VIA electrode is formed, being electrically connected to the electrode pad by way of the non-active area. The non-active area has an insulating region obtained by forming an insulating film on the semiconductor substrate, and a dummy section obtained by leaving a base material of the semiconductor substrate in the insulating region. The dummy section is provided in a position where an outer edge of the Through Silicon VIA electrode does not intersect with the boundary between the insulating region and the dummy section.

What is claimed is: 
     
         1 . A method for manufacturing a semiconductor device, comprising:
 a step for forming, on a semiconductor substrate, an active area in which a plurality of active elements are formed, and a non-active area excepting said active area;   a step for forming at least one electrode pad electrically connected to any of said active elements; and   a step for forming at least one Through Silicon VIA electrode electrically connected to said electrode pad by way of said non-active area, wherein   the step for forming said non-active area includes a step for forming a dummy section obtained by leaving a base material of said semiconductor substrate in an insulating region composed of an insulating film; and   said Through Silicon VIA electrode is formed such that an outer edge of thereof does not intersect with the boundary between said insulating region and said dummy section.   
     
     
         2 . The method for manufacturing a semiconductor device of  claim 1 , wherein the step for forming said non-active area includes a step for providing said dummy section in only the outside of the region through which said Through Silicon VIA electrode passes. 
     
     
         3 . The method for manufacturing a semiconductor device of  claim 1 , further comprising a step for providing a ring-shaped dummy section for surrounding the region through which said Through Silicon VIA electrode passes. 
     
     
         4 . The method for manufacturing a semiconductor device of  claim 1 , wherein the step for forming said non-active area includes a step for providing said dummy section outside and inside the region through which said Through Silicon VIA electrode passes. 
     
     
         5 . The method for manufacturing a semiconductor device of  claim 1 , wherein the step for forming said non-active area includes a step for forming a dummy section that extends over the entire surface of the region through which said Through Silicon VIA electrode passes.