Pattern forming method and imprint apparatus

Abstract

A pattern forming method includes forming a first resist pattern on a substrate using imprint lithography. And forming a resist onto the substrate at least at positions corresponding to a second resist pattern and then curing the resist to form the a second resist pattern on the substrate.

What is claimed is: 
     
         1 . A pattern forming method, comprising:
 forming a first resist pattern on a substrate using imprint lithography; and   forming a resist onto the substrate at least at positions corresponding to a second resist pattern and then curing the resist to form the second resist pattern on the substrate.   
     
     
         2 . The pattern forming method according to  claim 1 , wherein the first and second resist patterns connect to form an integrated pattern shape. 
     
     
         3 . The pattern forming method according to  claim 1 , wherein
 the first resist pattern includes a pattern portion having a stair shape and forms an annular shaped area, and   the second resist pattern is formed inside the annular shaped area.   
     
     
         4 . The pattern forming method according to  claim 3 , further comprising:
 exposing a light having a maximum intensity at a vacuum ultraviolet (VUV) wavelength on one of the first resist pattern or the second resist pattern after an initial curing process using ultraviolet light having a maximum intensity at a non-VUV wavelength.   
     
     
         5 . The pattern forming method according to  claim 3 , further comprising:
 forming a third resist pattern on the second resist pattern within the annular shaped area formed by the first resist pattern.   
     
     
         6 . The pattern forming method according to  claim 3 , wherein, when the first resist pattern is formed by imprint lithography, a droplet dispensing position and a droplet dispensed amount of an imprintable resist are each adjusted such that a hollow is formed between an imprint template and the imprintable resist at a position within the annular shaped area. 
     
     
         7 . The pattern forming method according to  claim 6 , wherein the imprintable resist used in forming the first resist pattern and the resist used in forming the second resist pattern are a same material type. 
     
     
         8 . The pattern forming method according to  claim 6 , wherein the imprintable resist used in forming the first resist pattern and the resist used in forming the second resist pattern are different material types. 
     
     
         9 . The pattern forming method according to  claim 1 , further comprising:
 irradiating a light having a maximum intensity at a vacuum ultraviolet (VUV) wavelength on one of the first resist pattern or the second resist pattern after an initial curing process using ultraviolet light having a maximum intensity at a non-VUV wavelength.   
     
     
         10 . A pattern forming method, comprising:
 dispensing a first resist on a substrate;   pressing a patterned template into the first resist;   curing the first resist to form a first resist pattern, and then separating the patterned template from the first resist; and   dispensing a second resist onto the substrate at least at positions corresponding to a second pattern, and then curing the second resist to form the a second resist pattern on the substrate.   
     
     
         11 . The pattern forming method according to  claim 10 , wherein the second pattern is formed on the substrate before the first pattern is formed on the substrate. 
     
     
         12 . The pattern forming method according to  claim 11 , wherein a portion of the first pattern is formed over the second pattern. 
     
     
         13 . The pattern forming method according to  claim 11 , wherein
 the second resist is cured by exposure to light having a maximum intensity at an ultraviolet wavelength outside of a vacuum ultraviolet wavelength range, and   after curing, the second pattern is irradiated with light having a maximum intensity at a wavelength inside the vacuum ultraviolet wavelength range.   
     
     
         14 . The pattern forming method according to  claim 10 , wherein the first pattern is formed on the substrate before the second pattern is formed on the substrate. 
     
     
         15 . The pattern forming method according to  claim 14 , wherein the first pattern includes an annular shaped portion, and the second resist is dispensed to fill the annular shaped portion. 
     
     
         16 . The pattern forming method according to  claim 15 , wherein
 the first resist is cured by exposure to light having a maximum intensity at an ultraviolet wavelength outside of a vacuum ultraviolet wavelength range, and   after curing, but before second resist is dispensed, the first pattern is irradiated to light having a maximum intensity at a wavelength inside the vacuum ultraviolet wavelength range.   
     
     
         17 . An imprint apparatus, comprising:
 a liquid dispensing device that dispenses a resist onto a substrate;   a pressing mechanism that presses a template into the resist on the substrate; and   a light source device that separately supplies, to the substrate, an ultraviolet light having a maximum intensity at a wavelength outside a vacuum ultraviolet wavelength range and a vacuum ultraviolet light having a maximum intensity at a wavelength inside the vacuum ultraviolet wavelength range.   
     
     
         18 . The imprint apparatus according to  claim 17 , wherein the light source device includes a first light source providing the vacuum ultraviolet light and a second light source providing the ultraviolet light having the maximum intensity at a wavelength outside the vacuum ultraviolet range. 
     
     
         19 . A template for patterning processes, comprising:
 a first protrusion portion on a first surface and having a first step portion in a first region and a second step portion in a second region, the first step portion having a first height;   a first recess portion on the first surface between the first and second regions on the first protrusion portion; and   a second protrusion portion having the first height provided on the first recess portion.   
     
     
         20 . The template according to  claim 19 , further comprising:
 a cavity portion on the first surface, the cavity portion being between the first step potion and the second protrusion portion.