Semiconductor light-emitting device

Abstract

A semiconductor light-emitting device comprises a semiconductor stack having a first surface, wherein the first surface comprises multiple protrusion portions and multiple concave portions; a first electrode on the first surface and electrically connecting with the semiconductor stack; a second electrode on the first surface and electrically connecting with the semiconductor stack; and a transparent conduction layer conformally covering the first surface and between the first electrode and the semiconductor stack, wherein the first electrode comprises a first bonding portion and a first extending portion, and the first extending portion is between the first bonding portion and the transparent conduction layer and conformally covers the transparent conduction layer.

What is claimed is: 
     
         1 . A method of forming a semiconductor light-emitting device, comprising:
 providing a semiconductor stack for emitting a light and having a first surface and a second surface opposite to the first surface, wherein the first surface comprises multiple protrusion portions and multiple concave portions;   providing a first electrode on the first surface and electrically connecting with the semiconductor stack;   providing a second electrode on the first surface and electrically connecting with the semiconductor stack;   providing a transparent layer covering the first surface and between the first electrode and the semiconductor stack; and   providing a transparent substrate on the second surface;   wherein the light penetrates the transparent substrate,   wherein the first electrode comprises a first bonding portion and a first extending portion, and the first extending portion is between the first bonding portion and the transparent layer and covers the transparent layer, and   wherein the protrusion portion is between 500 nm and 5000 nm in height.   
     
     
         2 . The method according to according to  claim 1 , further comprising providing an insulating layer covering the first extending portion and a first side of the semiconductor stack, wherein the insulating layer is between the first extending portion and the first bonding portion. 
     
     
         3 . The method according to  claim 2 , wherein the first electrode further comprises a first connecting portion passing through the insulating layer and electrically connecting the first bonding portion and the first extending portion. 
     
     
         4 . The method according to  claim 3 , wherein the first connecting portion is on the second side of the semiconductor stack opposite to the first side. 
     
     
         5 . The method according to  claim 3 , wherein the first bonding portion and the first connecting portion comprise a first material, the first extending portion comprises a second material, the first material comprises Ti, Pt, Ni, Sn, Au or the alloy thereof, and the second material comprises Ag, Au, Al, Ni, Sn, Cu, Ti, Pt or the alloy thereof. 
     
     
         6 . The method according to  claim 1 , wherein the protrusion portion comprises a plateau and a bevel, the concave portion comprises a bottom surface, and an angle between the bevel and the bottom surface is between 15 and 75 degrees. 
     
     
         7 . The method according to  claim 1 , wherein the second electrode comprises a second bonding portion and a second extending portion, wherein the second bonding portion is on the first surface and the second extending portion is on the second surface. 
     
     
         8 . The method according to  claim 7 , wherein the second bonding portion and the first bonding portion have the same area. 
     
     
         9 . The method according to  claim 7 , wherein the total area of the first bonding portion and the second bonding portion is between 15% and 95% of the area of the semiconductor light-emitting device. 
     
     
         10 . The method according to  claim 7 , further comprising providing an insulating layer on the first surface, wherein the insulating layer is between the semiconductor stack and the second bonding portion. 
     
     
         11 . The method according to  claim 10 , wherein the second electrode further comprises a second connecting portion electrically connecting the second bonding portion and the second extending portion, and the second electrode is on a first side of the semiconductor stack, wherein the insulating layer is between the second connecting portion and the semiconductor stack. 
     
     
         12 . The method according to  claim 11 , wherein the second extending portion comprises Au, Be, Ge, Ni, Pd, Zn, or the alloy thereof. 
     
     
         13 . The method according to  claim 11 , wherein the second extending portion comprises ITO, InO, SnO, CTO, ATO, AZO, ZTO, or ZnO. 
     
     
         14 . The method according to  claim 11 , wherein the second bonding portion and the second connecting portion comprise a fourth material and the fourth material comprises Ti, W, Pt, Ni, Sn, Au or the alloy thereof. 
     
     
         15 . The method according to  claim 7 , wherein the second extending portion comprises multiple extending electrodes which are parallel to each other corresponding to the multiple concave portions, and the multiple protrusion portions do not overlap with the multiple extending electrodes in the direction perpendicular to the stacking direction. 
     
     
         16 . The method according to  claim 15 , wherein the second surface comprises multiple concaves and the multiple extending electrodes are in the multiple concaves respectively. 
     
     
         17 . A method of forming a semiconductor light-emitting device, comprising:
 providing a semiconductor stack for emitting a light and having a first surface and a second surface opposite to the first surface;   lithographically etching the first surface to form multiple protrusion portions and multiple concave portions;   providing multiple contacting structures on the multiple protrusion portions and ohmically contacting the semiconductor stack;   providing a first electrode on the first surface and ohmically contacting the multiple contacting structures;   providing a second electrode on the first surface and electrically connecting with the semiconductor stack;   providing a transparent layer to cover the first surface and between the first electrode and the semiconductor stack; and   adhering a transparent substrate on the second surface;   wherein the multiple contacting structures comprise Au, Be, Ge, Ni, Pd, Zn or the alloy thereof,   wherein the light penetrates the transparent substrate, and   wherein the first electrode comprises a first bonding portion and a first extending portion, and the first extending portion is between the first bonding portion and the transparent layer and covers the transparent layer.   
     
     
         18 . The method according to  claim 17 , wherein the protrusion portion comprises a plateau and a bevel, the concave portion comprises a bottom surface, and an angle between the bevel and the bottom surface is between 15 and 75 degrees. 
     
     
         19 . The method according to  claim 17 , further comprising forming an insulating layer to cover the first extending portion and a first side of the semiconductor stack, wherein insulating layer is between the first extending portion and the first bonding portion. 
     
     
         20 . The method according to  claim 19 , wherein the first electrode further comprises a first connecting portion passing through the insulating layer and electrically connecting the first bonding portion and the first extending portion.