Apparatus for depositing a cobalt layer using a carousel batch deposition reactor

Abstract

Methods and apparatus for depositing a cobalt layer in features formed on a substrate are provided herein. In some embodiments, a substrate processing chamber includes: a chamber body having a processing volume; a rotatable substrate support disposed within the chamber body, wherein the substrate support is configured to rotate one or more substrates arranged in a planar array between a first processing position and a second processing position, wherein the first processing position and the second processing position are independently thermally controlled; a showerhead disposed opposite the rotatable substrate support configured to expose the one or more substrates at the first processing position to a cobalt containing precursor; and a heat source disposed within the substrate support configured to heat the one or more substrates at the second processing position.

1 . A substrate processing chamber, comprising:
 a chamber body having a processing volume;   a rotatable substrate support disposed within the chamber body, wherein the substrate support is configured to rotate one or more substrates arranged in a planar array between a first processing position and a second processing position, wherein the first processing position and the second processing position are independently thermally controlled;   a showerhead disposed opposite the rotatable substrate support configured to expose the one or more substrates at the first processing position to a cobalt containing precursor; and   a heat source disposed within the substrate support configured to heat the one or more substrates at the second processing position.   
     
     
         2 . The substrate processing chamber of  claim 1 , further comprising an RF power source coupled to the substrate processing chamber to form a plasma within the processing volume.) 
     
     
         3 . The substrate processing chamber of  claim 1 , further comprising a gas supply coupled to the substrate processing chamber. 
     
     
         4 . The substrate processing chamber of  claim 3 , wherein the gas supply comprises a cobalt containing precursor. 
     
     
         5 . The substrate processing chamber of  claim 1 , further comprising a plurality of resistive heaters disposed within the substrate support beneath the second processing position. 
     
     
         6 . The substrate processing chamber of  claim 5 , further comprising one or more RF power sources coupled to the plurality of resistive heaters. 
     
     
         7 . The substrate processing chamber of  claim 1 , further comprising a controller configured to control operation of the substrate processing chamber, the controller including a non-transitory computer readable medium having instructions stored thereon that, when executed, cause a method of depositing a cobalt layer atop a substrate, the method comprising:
 (a) exposing the substrate to a cobalt containing precursor at a first processing position to deposit a cobalt layer atop the substrate, wherein the substrate at the first processing position is at a first temperature;   (b) rotating the substrate to a second processing position; and   (c) annealing the substrate at the second processing position to remove contaminants from the cobalt layer, wherein the substrate at the second processing position is at a second temperature greater than the first temperature.   
     
     
         8 . The substrate processing chamber of  claim 5 , wherein the method further comprises repeating (a)-(c) to form a cobalt layer having a final thickness. 
     
     
         9 . The substrate processing chamber of  claim 1 , wherein the cobalt containing precursor comprises one or more of cobalt carbonyl complexes, cobalt amidinate compounds, cobaltocene compounds, cobalt dienyl complexes, cobalt nitrosyl complexes, dicobalt hexacarbonyl acetyl compounds, cyclopentadienyl cobalt bis(carbonyl) (CpCo(CO) 2 ), tricarbonyl allyl cobalt ((CO) 3 Co(CH 2 CH═CH 2 )). 
     
     
         10 . The substrate processing chamber of  claim 1 , further comprising maintaining a process chamber pressure at about 15 to about 25 Torr. 
     
     
         11 . The method of  claim 1 , wherein exposing the substrate to a cobalt containing precursor further comprises exposing the substrate to a cobalt containing precursor in a plasma state. 
     
     
         12 . The substrate processing chamber of  claim 1 , wherein the first temperature is about 100 to about 400 degrees Celsius and the second temperature is about 150 degrees Celsius to about 500 degrees Celsius. 
     
     
         13 . The substrate processing chamber of  claim 1 , further comprising annealing the substrate for about 50 seconds to about 150 seconds. 
     
     
         14 . The substrate processing chamber of  claim 1 , further comprising, after annealing the substrate, cooling the substrate to a temperature suitable for cobalt deposition. 
     
     
         15 . The substrate processing chamber of  claim 1 , further comprising providing at least 2 substrates to the substrate support. 
     
     
         16 . The substrate processing chamber of  claim 13 , wherein a first set of substrates are at the first processing position and exposed to the cobalt containing precursor to deposit the cobalt layer atop the first set of substrates. 
     
     
         17 . The method of  claim 14 , wherein a second set of substrates are at the second processing position. 
     
     
         18 . The substrate processing chamber of  claim 15 , wherein exposing the first set of substrates at the first processing position to the cobalt containing precursor and annealing the second set of substrates at the second processing position occurs simultaneously. 
     
     
         19 . The substrate processing chamber of  claim 16 , wherein the substrate support rotates the first set of substrates to the second processing position to anneal the first set of substrates to remove contaminants from the cobalt layer and rotates the second set of substrates to the first processing position to expose the second set of substrates to the cobalt containing precursor to deposit the cobalt layer atop the second set of substrates.