Solid-state image pickup unit, method of manufacturing solid-state image pickup unit, and electronic apparatus

Abstract

A solid-state image pickup unit includes: a p-type compound semiconductor layer of a chalcopyrite structure; an electrode formed on the p-type compound semiconductor layer; and an n-type layer formed separately for each pixel, on a surface opposite to a light incident side of the p-type compound semiconductor layer.

1 . A solid-state image pickup unit, comprising:
 a p-type compound semiconductor layer of a chalcopyrite structure;   an electrode on the p-type compound semiconductor layer; and   an n-type layer separately for each pixel of a pixel region in the solid-state image pickup unit,   wherein the n-type layer is on a surface of the p-type compound semiconductor layer opposite to a light incident surface side of the p-type compound semiconductor layer.   
     
     
         2 . The solid-state image pickup unit according to  claim 1 , wherein the electrode is on the light incident surface side of the p-type compound semiconductor layer. 
     
     
         3 . The solid-state image pickup unit according to  claim 1 , wherein the electrode is of a metal that is ohmically in contact with the p-type compound semiconductor layer. 
     
     
         4 . The solid-state image pickup unit according to  claim 2 , wherein the electrode is in a pixel separation region of the n-type layer. 
     
     
         5 . The solid-state image pickup unit according to  claim 2 , wherein a p-type layer in the pixel separation region of the n-type layer. 
     
     
         6 . The solid-state image pickup unit according to  claim 1 , wherein the n-type layer configures a source and a drain of a MOS transistor on a semiconductor substrate. 
     
     
         7 . The solid-state image pickup unit according to  claim 1 , further comprising:
 an insulating layer on the p-type compound semiconductor layer; and   a translucent electrode on the insulating layer.   
     
     
         8 . The solid-state image pickup unit according to  claim 1 ,
 wherein the electrode is of a metallic film,   wherein the metallic film is on a light incident surface of the p-type compound semiconductor layer, and   wherein an translucent electrode is on the metallic film.   
     
     
         9 . An electronic apparatus, comprising:
 a solid-state image pickup unit; and   a signal processing circuit configured to process a signal output from the solid-state image pickup unit,   wherein the solid-state image pickup unit comprises:
 a p-type compound semiconductor layer of a chalcopyrite structure; 
 an electrode on the p-type compound semiconductor layer; and 
 an n-type layer separately for each pixel of a pixel region in the solid-state image pickup unit, 
 wherein the n-type layer is on a surface of the p-type compound semiconductor layer opposite to a light incident side of the p-type compound semiconductor layer.