US2018130656A1PendingUtilityA1

FORMING DEFECT-FREE RELAXED SiGe FINS

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Assignee: GLOBALFOUNDRIES INCPriority: Jun 30, 2016Filed: Dec 15, 2017Published: May 10, 2018
Est. expiryJun 30, 2036(~9.9 yrs left)· nominal 20-yr term from priority
Inventors:Judson R. HoltJinping LiuJody A. FronheiserBharat KrishnanChuramani GaireTimothy J. McardleMurat Kerem Akarvardar
H10P 30/208H10P 95/90H10P 30/222H10P 30/204H10P 30/21H10P 14/6308H10P 14/3411H10P 14/2905H10W 10/17H10W 10/014H10P 14/3822H01L 21/324H01L 21/02532H01L 29/66795H01L 29/1054H01L 21/02236H01L 29/165H01L 29/785H01L 21/26513H01L 21/02381H01L 29/0649H01L 21/02694H10D 84/0158H10D 84/038H10D 62/822H10D 62/115H10D 30/798H10D 30/751H10D 30/62H10D 30/024H10P 30/28
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Claims

Abstract

A method of forming defect-free relaxed SiGe fins is provided. Embodiments include forming fully strained defect-free SiGe fins on a first portion of a Si substrate; forming Si fins on a second portion of the Si substrate; forming STI regions between adjacent SiGe fins and Si fins; forming a cladding layer over top and side surfaces of the SiGe fins and the Si fins and over the STI regions in the second portion of the Si substrate; recessing the STI regions on the first portion of the Si substrate, revealing a bottom portion of the SiGe fins; implanting dopant into the Si substrate below the SiGe fins; and annealing.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A device comprising:
 strained silicon germanium (SiGe) fins, each having a top portion and a bottom portion, on a first portion of a silicon (Si) substrate;   Si fins, each having a top portion and a bottom portion, on a second portion of the Si substrate;   shallow trench isolation (STI) regions between adjacent SiGe fins and Si fins, the STI regions being below a bottom surface of the SiGe fins and below the top portion of the Si fins;   a cladding layer over top and side surfaces of the top portions of the SiGe fins and the Si fins and over the STI regions in the second portion of the Si substrate; and   a dopant implanted into the Si substrate below the SiGe fins.   
     
     
         2 . The device according to  claim 1 , wherein the SiGe fins comprise a first SiGe material over a second SiGe material. 
     
     
         3 . The device according to  claim 2 , wherein the first SiGe material has a higher concentration of germanium (Ge) than the second SiGe material. 
     
     
         4 . The device according to  claim 3 , wherein the Si fins comprise a Si material over the second SiGe material. 
     
     
         5 . The device according to  claim 1 , wherein the dopant is implanted in the Si substrate under the second SiGe material of the Si fins and under the SiGe fins. 
     
     
         6 . The device according to  claim 1 , wherein the cladding layer comprises nitride, oxynitride, low-k dielectric material, or silicon oxycarbide (SiOC). 
     
     
         7 . A device comprising:
 strained silicon germanium (SiGe) fins on a first portion of a silicon (Si) substrate;   Si fins on a second portion of the Si substrate;   shallow trench isolation (STI) regions between adjacent SiGe fins and Si fins; and   a cladding layer over top and side surfaces of the SiGe fins and the Si fins and over the STI regions in the second portion of the Si substrate,   wherein a bottom portion of the SiGe fins is oxidized.   
     
     
         8 . The device according to  claim 7 , wherein the SiGe fins comprise a first SiGe material over a second SiGe material. 
     
     
         9 . The device according to  claim 8 , wherein the first SiGe material has a higher concentration of germanium (Ge) than the second SiGe material. 
     
     
         10 . The device according to  claim 9 , wherein the Si fins comprise a Si material over the second SiGe material. 
     
     
         11 . The device according to  claim 7 , wherein a bottom portion of the second SiGe material of both the SiGe fins and the Si fins is oxidized. 
     
     
         12 . The device according to  claim 7 , wherein the cladding layer comprises nitride, oxynitride, low-k dielectric material, or silicon oxycarbide (SiOC). 
     
     
         13 . A device comprising:
 strained silicon (Si) fins on a first portion of a substrate;   Si fins on a second portion of the substrate;   shallow trench isolation (STI) regions between adjacent strained Si fins and Si fins; and   a cladding layer over top and side surfaces of the strained Si fins and the Si fins and over the STI regions in the second portion of the Si substrate.   
     
     
         14 . The device according to  claim 13 , wherein the strained Si fins comprise silicon germanium (SiGe). 
     
     
         15 . The device according to  claim 14 , wherein a bottom portion of the SiGe fins is oxidized. 
     
     
         16 . The device according to  claim 15 , wherein the SiGe fins comprise a first SiGe material over a second SiGe material. 
     
     
         17 . The device according to  claim 16 , wherein the first SiGe material has a higher concentration of germanium (Ge) than the second SiGe material. 
     
     
         18 . The device according to  claim 17 , wherein the Si fins comprise a Si material over the second SiGe material. 
     
     
         19 . The device according to  claim 16 , further comprising a dopant implanted in the substrate under the second SiGe material of the Si fins and under the SiGe fins. 
     
     
         20 . The device according to  claim 13 , wherein the cladding layer comprises nitride, oxynitride, low-k dielectric material, or silicon oxycarbide (SiOC).

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