US2018128774A1PendingUtilityA1

Sensing device

35
Assignee: EPISTAR CORPPriority: Nov 7, 2016Filed: Jul 31, 2017Published: May 10, 2018
Est. expiryNov 7, 2036(~10.3 yrs left)· nominal 20-yr term from priority
Inventors:Kunal KashyapKun-Wei KaoMeng-Lun Tsai
H10W 74/137H10W 40/10G01N 27/414G01N 27/02H10D 62/8503H01L 29/7786H10D 62/221H10D 30/475H10D 62/824H10D 30/4755H10F 30/282H10F 77/60H10F 30/2823G01N 27/4141
35
PatentIndex Score
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Cited by
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References
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Claims

Abstract

A sensing device includes a semiconductor structure, a substrate, a first electrode and a second electrode, and a heater. A sensing area arranged on the top side of the semiconductor structure. The substrate is located under the bottom side of the semiconductor. The first electrode and the second electrode are arranged on the top side of the semiconductor structure. The heater is disposed on the semiconductor structure and separated from the sensing area by a distance less than 100 μm.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A sensing device, comprising:
 a semiconductor structure comprising a top side, a bottom side opposite to the top side, and a sensing area arranged on the top side;   a substrate arranged under the bottom side;   a first electrode and a second electrode arranged on the top side in a configuration to expose the sensing area; and   a heater disposed on the semiconductor structure and separated from the sensing area by a distance of less than 100 μm.   
     
     
         2 . The sensing device according to  claim 1 , wherein the substrate has a trench which is overlapped with the sensing area in a top view. 
     
     
         3 . The sensing device according to  claim 2 , wherein the substrate has a thinner portion and a thicker portion surrounding the thinner portion. 
     
     
         4 . The sensing device according to  claim 2 , wherein the trench has a top end where the heater is located, and an open end opposite to the top end. 
     
     
         5 . The sensing device according to  claim 1 , further comprising a passivation layer covering the heater. 
     
     
         6 . The sensing device according to  claim 1 , further comprising a passivation layer sandwiched by the heater and the semiconductor structure. 
     
     
         7 . The sensing device according to  claim 1 , further comprising a passivation layer formed in a loop configuration to enclose the sensing area. 
     
     
         8 . The sensing device according to  claim 1 , wherein the first electrode and the second electrode are interdigitated with each other in a top view. 
     
     
         9 . The sensing device according to  claim 1 , wherein the semiconductor structure has a recess formed on the top side where the sensing area is located. 
     
     
         10 . The sensing device according to  claim 1 , wherein the heater comprises a meandering line. 
     
     
         11 . A sensing device, comprising:
 a semiconductor structure comprising a top side, a bottom side opposite to the top side, and a sensing area arranged on the top side;   a substrate arranged under the bottom side;   an electrode disposed on the top side to expose the sensing area; and   a heater disposed on the semiconductor structure;   wherein the sensing device has an operating current less than 350 mA.   
     
     
         12 . The sensing device according to  claim 11 , wherein the heater is separated from the sensing area by a distance of less than 100 μm. 
     
     
         13 . The sensing device according to  claim 11 , wherein the heater is located on the top side. 
     
     
         14 . The sensing device according to  claim 11 , further comprising a passivation layer sandwiched by the heater and the semiconductor structure. 
     
     
         15 . The sensing device according to  claim 11 , further comprising a passivation layer formed in a loop configuration to enclose the sensing area. 
     
     
         16 . A sensing device, comprising:
 a semiconductor structure comprising a top side, a bottom side opposite to the top side, and a sensing area arranged on the top side;   a substrate arranged under the bottom side;   an electrode disposed on the top side in a configuration to expose the sensing area; and   a heater disposed on the semiconductor structure,   wherein the sensing device has a detection limit less than 10 ppm.   
     
     
         17 . The sensing device according to  claim 16 , wherein the heater is separated from the sensing area by a distance of less than 100 μm. 
     
     
         18 . The sensing device according to  claim 16 , wherein the heater is located on the top side. 
     
     
         19 . The sensing device according to  claim 16 , further comprising a passivation layer sandwiched by the heater and the semiconductor structure. 
     
     
         20 . The sensing device according to  claim 16 , wherein the substrate has a trench which is overlapped with the sensing area in a top view.

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