US2018114769A1PendingUtilityA1

Chip Packaging Structure and Related Inner Lead Bonding Method

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Assignee: SITRONIX TECHNOLOGY CORPPriority: Oct 25, 2016Filed: Oct 25, 2017Published: Apr 26, 2018
Est. expiryOct 25, 2036(~10.2 yrs left)· nominal 20-yr term from priority
Inventors:Ying-Chen ChangPo-Chi ChenKuo-Wei Tseng
H10W 72/9415H10W 72/29H10W 72/07236H10W 72/07253H10W 72/241H10W 72/016H10W 90/724H10W 72/2524H10W 72/07255H10W 72/221H10W 72/07252H10W 72/252H10W 72/242H10W 72/234H10W 72/232H10W 70/65H10W 90/701H10W 70/688H10W 72/072H10W 72/30H10W 70/657H10W 90/722H10W 72/07254H10W 72/877H10W 72/012H01L 24/81H01L 2224/05217H01L 2924/01079H01L 24/14H01L 21/563H01L 24/33H01L 24/11H10W 72/20H10W 70/60H10W 20/4432
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Claims

Abstract

A chip packaging structure includes a chip and a film substrate. The chip is formed with a gold bump, and the film substrate is formed with an inner lead, wherein the gold bump includes a first bonding surface and a plurality of side walls. The gold bump is electrically connected to the inner lead through a eutectic material coverage layer, and the first bonding surface and at least one of the plurality of side walls are covered by the eutectic material coverage layer.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A chip packaging structure, comprising:
 a chip formed with a gold bump; and   a film substrate formed with a lead;   wherein the gold bump comprises a first bonding surface and a plurality of side walls, the gold bump is electrically connected to the lead through a eutectic material coverage, and the first bonding surface and at least one of the plurality of side walls are covered by the eutectic material coverage.   
     
     
         2 . The structure of  claim 1 , wherein the lead and the gold bump extend along a first direction, the gold bump contacts with the lead toward a second direction, a width of the gold bump and a width of the lead are sizes along a third direction, and the first direction, the second direction and the third direction are perpendicular to one another. 
     
     
         3 . The structure of  claim 2 , wherein the width of the gold bump is smaller than or equal to the width of the lead. 
     
     
         4 . The structure of  claim 2 , wherein the width of the gold bump is greater than the width of the lead. 
     
     
         5 . The structure of  claim 1 , wherein the lead comprises a second bonding surface, the second bonding surface faces the first bonding surface of the gold bump toward the second direction, and the second bonding surface is covered by the eutectic material coverage. 
     
     
         6 . The structure of  claim 5 , wherein the second bonding surface and the first bonding surface are parallel to a first plane, projections of the second bonding surface and the first bonding onto the first plane are partially overlapped or completely overlapped, the plurality of side walls is parallel to a second plane, and the first plane is perpendicular to the second plane. 
     
     
         7 . The structure of  claim 2 , wherein the second bonding surface and the first bonding surface are parallel to a first plane, the plurality of side walls is parallel to a second plane, the first plane is perpendicular to the second plane, and the plurality of side walls comprises:
 a first side wall connected to the first bonding surface, perpendicular to the first bonding surface and the third direction; and   a second side wall connected to the first bonding surface, perpendicular to the first bonding surface and the third direction, and the first side wall and the second side wall are covered by the eutectic material coverage.   
     
     
         8 . The structure of  claim 7 , wherein the gold bump comprises:
 a third side wall connected to the first bonding surface, the first side wall and the second side wall, perpendicular to the first bonding surface and the first direction, and covered by the eutectic material coverage.   
     
     
         9 . A lead bonding method for a chip packaging structure, wherein the chip packaging structure comprises a chip and a film substrate, comprising:
 making a first bonding surface of a gold bump of the chip contact with a lead of the film substrate;   heating the gold bump and the lead up to a temperature range to form a eutectic material coverage between the gold bump and the lead; and   holding on for a predetermined period to make a first bonding surface, a second bonding surface and at least one of a plurality of side walls of the gold bump covered by the eutectic material coverage.   
     
     
         10 . The structure of  claim 9 , further comprising:
 forming the gold bump on the chip; and   forming the lead on the film substrate.   
     
     
         11 . The structure of  claim 9 , wherein the lead and the gold bump extend along a first direction, the gold bump contacts with the lead toward a second direction, a width of the gold bump and a width of the lead are sizes along a third direction, and the first direction, the second direction and the third direction are perpendicular to one another. 
     
     
         12 . The structure of  claim 11 , wherein the width of the gold bump is smaller than or equal to the width of the lead the gold bump. 
     
     
         13 . The structure of  claim 11 , wherein the width of the gold bump is greater than the width of the lead. 
     
     
         14 . The structure of  claim 9 , wherein the lead comprises a second bonding surface, the second bonding surface faces toward the first bonding surface of the gold bump, and the eutectic material coverage covers the second bonding surface. 
     
     
         15 . The structure of  claim 14 , wherein the second bonding surface and the first bonding surface are parallel to a first plane, projections of the second bonding surface and the first bonding onto the first plane are partially or completely overlapped, the plurality of side walls is parallel to a second plane, and the first plane is perpendicular to the second plane. 
     
     
         16 . The structure of  claim 11 , wherein the second bonding surface and the first bonding surface are parallel to a first plane, the plurality of side walls is parallel to a second plane, the first plane is perpendicular to the second plane, and the plurality of side walls comprises:
 a first side wall connected to the first bonding surface, perpendicular to the first bonding surface and the third direction; and   a second side wall connected to the first bonding surface, perpendicular to the first bonding surface and the third direction, and the first side wall and the second side wall are covered by the eutectic material coverage.   
     
     
         17 . The structure of  claim 16 , wherein the gold bump comprises:
 a third side wall connected to the first bonding surface, the first side wall and the second side wall, perpendicular to the first bonding surface and the first direction, and covered by the eutectic material coverage.   
     
     
         18 . The structure of  claim 9 , wherein the temperature range is from 400 to 500 Celsius degrees. 
     
     
         19 . The structure of  claim 9 , wherein the predetermined period is from 0.1 to 2 seconds.

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