Light emitting device

Abstract

The light emitting device includes a substrate, and an n-type conductive type semiconductor layer, a light emitting layer and a p-type conductive type semiconductor layer laminated in series on a surface of the substrate. The light emitting layer, the p-type conductive type semiconductor layer, and a portion of the n-type conductive type semiconductor layer excluding the vicinity of the peripheral portion compose a semiconductor laminate structure portion. A p-side transparent electrode layer is formed on a surface of the p-type conductive type semiconductor layer. The p-side transparent electrode covers a substantially whole area of a predetermined current injection region on a surface of the p-type conductive type semiconductor layer. A p-side electrode is formed on a surface of the p-side transparent electrode layer. A plurality of concave portions, which penetrate the p-side transparent electrode layer and enter the semiconductor laminate structure portion, are formed on a surface of the p-side transparent electrode layer.

What is claimed is: 
     
         1 . A light emitting device, comprising:
 a substrate having a surface and a rear surface;   a first semiconductor layer having a first conductivity type which is formed on the surface of the substrate;   a first electrode which is formed on the first semiconductor layer;   a light emitting layer which is formed apart from the first electrode on the first semiconductor;   a second semiconductor layer having a second conductivity type which is formed on the light emitting layer;   a second electrode disposed on the second semiconductor layer and being electrically connected to the second semiconductor layer;   an opening which is continuously opened to the second semiconductor layer, the light emitting layer and the first semiconductor layer, and whose inner side wall is inclined with respect to a surface direction of the surface of the substrate; and   an insulating layer formed on the inner side wall and the bottom surface of the opening, and extending over the second semiconductor layer, the light emitting layer and the first semiconductor layer.   
     
     
         2 . The light emitting device according to  claim 1 , wherein a convex portion is formed on the surface of the substrate. 
     
     
         3 . The light emitting device according to  claim 1 , wherein the second semiconductor layer is electrically connected the second electrode via a transparent electrode layer. 
     
     
         4 . The light emitting device according to  claim 1 , wherein a distance from the surface of the substrate to the surface of the second electrode is longer than a distance from the surface of the substrate to the surface of the first electrode. 
     
     
         5 . The light emitting device according to  claim 1 , wherein the bottom surface of the opening is the first semiconductor layer. 
     
     
         6 . The light emitting device according to  claim 1 , wherein a cross section of the opening gradually increase from the second semiconductor layer to the first semiconductor layer. 
     
     
         7 . The light emitting device according to  claim 1 , wherein a through hole communicating with the opening is formed in the transparent electrode layer. 
     
     
         8 . The light emitting device according to  claim 7 , wherein an insulating layer is formed on an inner side wall of the through hole. 
     
     
         9 . The light emitting device according to  claim 7 , wherein the inner side wall of the through hole is inclined with respect to the surface of the substrate. 
     
     
         10 . The light emitting device according to  claim 1 , wherein an insulating film is formed on a surface of the second semiconductor layer at the side opposite to the light emitting layer at a position facing the second electrode.