Ion implantation for superconductor tape fabrication

Abstract

A method of forming a superconductor tape, includes depositing a superconductor layer on a substrate, forming a metal layer comprising a first metal on a surface of the superconductor layer, and implanting an alloy species into the metal layer where the first metal forms a metal alloy after the implanting the alloy species.

What is claimed is: 
     
         1 . A method of processing a superconductor tape, comprising:
 providing the superconductor tape as a free standing tape comprising a superconductor layer and a metal layer;   directing ions into an implant zone along a first direction; and   drawing the superconductor tape through the implant zone along a draw axis perpendicular to the first direction wherein the metal layer is exposed to the ions.   
     
     
         2 . The method of  claim 1 , further comprising drawing the superconductor tape between a first reel in a first vacuum chamber and second reel in a second vacuum chamber during the implanting. 
     
     
         3 . The method of  claim 1 , wherein the directing the ions comprises directing an ion beam into the implant zone of a beamline, wherein the ion beam has a beam height along a second direction perpendicular to the first direction that is greater than a width of the superconductor tape along the second direction. 
     
     
         4 . The method of  claim 1 , further comprising:
 measuring ion dose rate of the ions proximate the superconductor tape; and   adjusting velocity of the drawing according to the measured dose rate.   
     
     
         5 . The method of  claim 1 , wherein the drawing the comprises drawing the superconductor tape back and forth between the first and second reel during the implanting. 
     
     
         6 . The method of  claim 1 , further comprising cooling the superconductor tape during the drawing by drawing the tape over cooling rollers. 
     
     
         7 . The method of  claim 1 , further comprising:
 performing a resistivity measurement of the superconductor tape during the implanting; and   adjusting tape velocity based on the resistivity measurement.   
     
     
         8 . The method of  claim 1 , further comprising, during the implanting introducing a gaseous species into the implant zone that is effective to promote reaction between the ions and the metal layer. 
     
     
         9 . The method of  claim 1 , wherein the metal layer is a first metal layer disposed on a first side of the superconductor layer and the superconductor tape comprises a second metal layer disposed on a second side of the superconductor layer, and wherein the superconductor tape is in a first orientation when the first metal layer is exposed to the ions, the method further comprising:
 flipping orientation of the superconductor tape wherein the second metal layer is exposed to the ions; and   drawing the superconductor tape along the draw zone.   
     
     
         10 . An ion implantation apparatus for implanting a tape, comprising:
 an implantation chamber to conduct an ion beam along a first direction;   a first vacuum chamber disposed on a first side of the implantation chamber and housing a first reel;   a second vacuum chamber disposed on a second side of the implantation chamber opposite the first side and housing a second reel wherein the first and second reel are interoperative to draw the tape through the ion beam along a draw direction perpendicular to the first direction.   
     
     
         11 . The ion implantation apparatus of  claim 10 , further comprising a set of rollers, configured to engage the tape in the implantation chamber. 
     
     
         12 . The ion implantation apparatus of  claim 10 , further comprising a set of sensors, disposed to intercept the ion beam in the implantation chamber. 
     
     
         13 . The ion implantation apparatus of  claim 12 , wherein at least one sensor of the set of sensors is movable along a first direction, the first direction being perpendicular to a direction of propagation of the ion beam. 
     
     
         14 . The ion implantation apparatus of  claim 13 , wherein the at least one sensor includes a beam blocker. 
     
     
         15 . The ion implantation apparatus of  claim 10 , further comprising:
 a first reel, disposed in the first vacuum chamber;   a second reel, disposed in the second vacuum chamber; and   a control system coupled to the ion implantation system to control the ion beam and the reels.   
     
     
         16 . The ion implantation apparatus of  claim 11 , further comprising cryogenic cooling, the cryogenic cooling to be applied to the set of rollers. 
     
     
         17 . The ion implantation apparatus of  claim 11 , further comprising heating, the heating to be applied to at least one roller of the set of rollers.