US2018102464A1PendingUtilityA1

Advanced Solder Alloys For Electronic Interconnects

Assignee: ALPHA ASSEMBLY SOLUTIONS INCPriority: Oct 6, 2016Filed: Oct 6, 2016Published: Apr 12, 2018
Est. expiryOct 6, 2036(~10.2 yrs left)· nominal 20-yr term from priority
H10W 72/952H10W 72/353H10W 72/352H10W 72/351H10W 72/325H10W 72/2528H10W 72/07255H10W 72/252H10W 72/3528H10W 72/07355H10W 72/225B23K 1/0016B23K 35/262B23K 1/0056B23K 1/085C22C 13/02B23K 1/002H01L 2224/13347H01L 2924/014H01L 2224/13313H01L 2224/1332H01L 2224/13355H01L 33/647H01L 2224/29211H01L 2224/29339H01L 2924/20106H01L 24/29H01L 2224/29313H01L 24/13H01L 2224/29347H01L 2924/12041H01L 33/62H01L 2224/2932H01L 2924/01058H01L 2224/13339H01L 2224/13211H01L 2224/29355H01L 33/641H01L 2933/0066H10H 20/8585H10H 20/8581H10H 20/0364H10H 20/857
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Claims

Abstract

Improved electrical and thermal properties of solder alloys are achieved by the use of micro-additives in solder alloys to engineer the electrical and thermal properties of the solder alloys and the properties of the reaction layers between the solder and the metal surfaces. The electrical and thermal conductivity of alloys and that of the reaction layers between the solder and the -metal surfaces can be controlled over a wide range of temperatures. The solder alloys produce stable microstructures wherein such stable microstructures of these alloys do not exhibit significant changes when exposed to changes in temperature, compared to traditional interconnect materials.

Claims

exact text as granted — not AI-modified
1 . A lead-free, antimony-free solder alloy comprising:
 (a) 10 wt. % or less of silver   (b) 10 wt. % or less of bismuth   (c) 3 wt. % or less of copper   (d) at least one of the following elements
 up to 1 wt. % of nickel 
 up to 1 wt. % of titanium 
 up to 1 wt. % of cobalt 
 up to 3.5 wt. % of indium 
 up to 1 wt. % of zinc 
 up to 1 wt. % of cerium 
   (e) optionally one or more of the following elements
 0 to 1 wt. % of manganese 
 0 to 1 wt. % of chromium 
 0 to 1 wt. % of germanium 
 0 to 1 wt. % of iron 
 0 to 1 wt. % of aluminum 
 0 to 1 wt. % of phosphorus 
 0 to 1 wt. % of gold 
 0 to 1 wt. % of gallium 
 0 to 1 wt. % of tellurium 
 0 to 1 wt. % of selenium 
 0 to 1 wt. % of calcium 
 0 to 1 wt. % of vanadium 
 0 to 1 wt. % of molybdenum 
 0 to 1 wt. % of platinum 
 0 to 1 wt. % of magnesium 
 0 to 1 wt. % of rare earths 
   (f) the balance tin, together with any unavoidable impurities.   
     
     
         2 . A lead-free, solder alloy comprising:
 (a) 10 wt. % or less of silver   (b) 10 wt. % or less of bismuth   (c) 3 wt. % or less of copper   (d) 4 wt % or less of antimony   (e) at least one of the following elements
 up to 1 wt % of Ni 
 up to 1 wt. % of titanium 
 up to 1 wt. % of cobalt 
 up to 3.5 wt. % of indium 
 up to 1 wt. % of zinc 
 up to 1 wt. % of cerium 
   (f) optionally one or more of the following elements
 0 to 1 wt. % of manganese 
 0 to 1 wt. % of chromium 
 0 to 1 wt. % of germanium 
 0 to 1 wt. % of iron 
 0 to 1 wt. % of aluminum 
 0 to 1 wt. % of phosphorus 
 0 to 1 wt. % of gold 
 0 to 1 wt. % of gallium 
 0 to 1 wt. % of tellurium 
 0 to 1 wt. % of selenium 
 0 to 1 wt. % of calcium 
 0 to 1 wt. % of vanadium 
 0 to 1 wt. % of molybdenum 
 0 to 1 wt. % of platinum 
 0 to 1 wt. % of magnesium 
 0 to 1 wt. % of rare earths 
   (g) the balance tin, together with any unavoidable impurities.   
     
     
         3 . The lead-free, antimony-free solder alloy of  claim 1 , wherein the alloy has melting point of from 200 to 222° C. 
     
     
         4 . The lead-free solder alloy of  claim 2 , wherein the alloy has melting point of from 200 to 222° C. 
     
     
         5 . The solder alloy of  claim 1 , wherein the alloy is in the form of a stick, a solid or flux cored wire, a foil or strip, or a powder or paste (powder plus flux blend), or solder spheres for use in ball grid array joints or chip scale packages, or other pre-formed solder pieces, with or without a flux core or a flux coating. 
     
     
         6 . The solder alloy of  claim 2 , wherein the alloy is in the form of a stick, a solid or flux cored wire, a foil or strip, or a powder or paste (powder plus flux blend), or solder spheres for use in ball grid array joints or chip scale packages, or other pre-formed solder pieces, with or without a flux core or a flux coating. 
     
     
         7 . The solder alloy of  claim 1 , wherein the alloy comprises nickel. 
     
     
         8 . The solder alloy of  claim 1 , wherein the alloy comprises cerium. 
     
     
         9 . A soldered joint comprising a lead-free, antimony-free solder alloy comprising:
 (a) 10 wt. % or less of silver   (b) 10 wt. % or less of bismuth   (c) 3 wt. % or less of copper   (d) at least one of the following elements
 up to 1 wt. % of nickel 
 up to 1 wt. % of titanium 
 up to 1 wt. % of cobalt 
 up to 3.5 wt. % of indium 
 up to 1 wt. % of zinc 
 up to 1 wt. % of cerium 
   (e) optionally one or more of the following elements
 0 to 1 wt. % of manganese 
 0 to 1 wt. % of chromium 
 0 to 1 wt. % of germanium 
 0 to 1 wt. % of iron 
 0 to 1 wt. % of aluminum 
 0 to 1 wt. % of phosphorus 
 0 to 1 wt. % of gold 
 0 to 1 wt. % of gallium 
 0 to 1 wt. % of tellurium 
 0 to 1 wt. % of selenium 
 0 to 1 wt. % of calcium 
 0 to 1 wt. % of vanadium 
 0 to I wt. % of molybdenum 
 0 to 1 wt. % of platinum 
 0 to 1 wt. % of magnesium 
 0 to 1 wt. % of rare earths 
   (f) the balance tin, together with any unavoidable impurities.   
     
     
         10 . A soldered joint comprising a lead-free solder alloy comprising:
 (a) 10 wt. % or less of silver   (b) 10 wt. % or less of bismuth   (c) 3 wt. % or less of copper   (d) 4 wt. % or less of antimony   (e) at least one of the following elements
 up to 1 wt. % of nickel 
 up to 1 wt. % of titanium 
 up to 1 wt. % of cobalt 
 up to 3.5 wt. % of indium 
 up to 1 wt. % of zinc 
 up to 1 wt. % of cerium 
   (f) optionally one or more of the following elements
 0 to 1 wt. % of manganese 
 0 to 1 wt. % of chromium 
 0 to 1 wt. % of germanium 
 0 to 1 wt. % of iron 
 0 to 1 wt. % of aluminum 
 0 to 1 wt. % of phosphorus 
 0 to 1 wt. % of gold 
 0 to 1 wt. % of gallium 
 0 to 1 wt. % of tellurium 
 0 to 1 wt. % of selenium 
 0 to 1 wt. % of calcium 
 0 to 1 wt. % of vanadium 
 0 to 1 wt. % of molybdenum 
 0 to 1 wt. % of platinum 
 0 to 1 wt. % of magnesium 
 0 to 1 wt. % of rare earths 
   (g) the balance tin, together with any unavoidable impurities.   
     
     
         11 . A method of soldering, the method comprising the steps of:
 a) applying a solder alloy to a substrate, wherein the solder is a lead free or a lead-free, antimony free solder alloy;   wherein the solder can be applied by wave soldering, Surface Mount Technology (SMT) soldering, die attach soldering, thermal interface soldering, hand soldering, laser and RF induction soldering, rework soldering, lamination, and combinations thereof.   
     
     
         12 . The method according to  claim 11 , wherein the lead-free, antimony-free solder alloy comprises:
 (a) 10 wt. % or less of silver   (b) 10 wt. % or less of bismuth   (c) 3 wt. % or less of copper   (d) at least one of the following elements
 up to 1 wt. % of nickel 
 up to 1 wt. % of titanium 
 up to 1 wt. % of cobalt 
 up to 3.5 wt. % of indium 
 up to 1 wt. % of zinc 
 up to 1 wt. % of cerium 
   (e) optionally one or more of the following elements
 0 to 1 wt. % of manganese 
 0 to 1 wt. % of chromium 
 0 to 1 wt. % of germanium 
 0 to 1 wt. % of iron 
 0 to 1 wt. % of aluminum 
 0 to 1 wt. % of phosphorus 
 0 to 1 wt. % of gold 
 0 to 1 wt. % of gallium 
 0 to 1 wt. % of tellurium 
 0 to 1 wt. %a of selenium 
 0 to 1 wt. % of calcium 
 0 to 1 wt. % of vanadium 
 0 to 1 wt. % of molybdenum 
 0 to 1 wt. % of platinum 
 0 to 1 wt. % of magnesium 
 0 to 1 wt. % of rare earths 
   (f) the balance tin, together with any unavoidable impurities.   
     
     
         13 . The method according to  claim 11 , wherein the substrate is a printed circuit board, flexible substrate, a metal core circuit board, a leadframe, a direct bond copper on Al 2 O 3  or AlN. 
     
     
         14 . The method according to  claim 11 , wherein the substrate is an LED component, LED die, and LED package, a high power switch, a high power amplifier or any other electronic component. 
     
     
         15 . The method according to  claim 14 , wherein the LED component exhibits less than 5% change in CCT over 1500 temperature cycles. 
     
     
         16 . The method according to  claim 11 , wherein the solder alloy has a thermal conductivity drop of less than 10% when the temperature of the alloy reaches 150° C. 
     
     
         17 . The method according to  claim 11 , wherein the electrical resistivity of the solder alloy increases less than 20% when the temperature of the alloy reaches 85° C. 
     
     
         18 . The method according to claim according to  claim 14 , wherein the LED with the solder alloy applied exhibits at least 10% higher luminous efficacy compared to an LED with SAC305. 
     
     
         19 . The method according to  claim 14  wherein the LED with the solder alloy applied shows a smaller drop in luminous flux during temperature cycling compared to an LED with SAC305. 
     
     
         20 . The method according to  claim 14 , wherein the solder is applied to the LED using die attach.

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