Methods of forming mgo barrier layer

Abstract

A method of making an MgO barrier layer for a TMR sensor, the method including depositing a first Mg layer in a first chamber, depositing a second Mg layer on the first Mg layer using a reactive oxide deposition process in the presence of oxygen in the first chamber or in a second chamber different than the first chamber, depositing a third Mg layer on the second MgO layer in either the first chamber, the second chamber, or a third chamber, and annealing the first layer, the second layer, and the third layer to form an MgO barrier layer.

What is claimed is: 
     
         1 . A method of making an MgO barrier layer for a TMR sensor, the method comprising:
 depositing a first Mg layer in a first chamber;   depositing a second Mg layer on the first Mg layer using a reactive oxide deposition process in the presence of oxygen in the first chamber or in a second chamber different than the first chamber;   depositing a third Mg layer on the second Mg layer in either the first chamber, the second chamber, or a third chamber different than the first chamber and the second chamber; and   annealing the first layer, the second layer, and the third layer to form an MgO barrier layer.   
     
     
         2 . The method of  claim 1 , wherein the step of depositing the first Mg layer is from an Mg target and the step of depositing the third Mg layer is from an Mg target. 
     
     
         3 . The method of  claim 2 , wherein the step of depositing the third Mg layer is in the first chamber, and the Mg target for depositing the third Mg layer is the same as the Mg target for depositing the first Mg layer. 
     
     
         4 . The method of  claim 1 , wherein the step of depositing the second Mg layer is from an Mg target. 
     
     
         5 . The method of  claim 4 , wherein the step of depositing the third Mg layer is in the second chamber, and the Mg target for depositing the third Mg layer is the same as the Mg target for depositing the second Mg layer. 
     
     
         6 . The method of  claim 1 , wherein the step of depositing the second Mg layer is with O 2 . 
     
     
         7 . The method of  claim 1 , wherein the step of depositing the second Mg layer is with O −2  ions. 
     
     
         8 . The method of  claim 1 , wherein the step of depositing the second Mg layer is in the first chamber, and the Mg target for depositing the second Mg layer is the same as the Mg target for depositing the first Mg layer. 
     
     
         9 . The method of  claim 1 , wherein the step of depositing the third Mg layer is in the second chamber. 
     
     
         10 . The method of  claim 1 , wherein the step of depositing the third Mg layer is in the third chamber. 
     
     
         11 . A method of making an MgO barrier layer for a TMR sensor, the method comprising:
 depositing a first MgO-source layer in a first chamber;   depositing a second MgO-source layer on the first MgO-source layer using a reactive oxide deposition process in the presence of oxygen in the first chamber or in a second chamber different than the first chamber;   depositing a third MgO-source layer on the second MgO-source layer in either the first chamber, the second chamber, or a third chamber different than the first chamber and the second chamber; and   annealing the first MgO-source layer, the second MgO-source layer, and the third MgO-source layer to form an MgO barrier layer.   
     
     
         12 . The method of  claim 11 , wherein the step of depositing the second MgO-source layer is with O 2 . 
     
     
         13 . The method of  claim 11 , wherein the step of depositing the second MgO-source layer is with O −2  ions. 
     
     
         14 . The method of  claim 11 , wherein the step of depositing the second MgO-source layer comprises depositing an Mg layer in the presence of oxygen. 
     
     
         15 . A method of making an MgO barrier layer for a TMR sensor, the method comprising:
 forming a first MgO-source layer in a first chamber using a DC-sputter deposition process;   forming a second MgO layer in a second chamber using R-ox deposition with an oxygen source;   forming a third MgO-source layer in a third chamber using DC-sputter deposition; and   annealing the first layer, the second layer, and the third layer to form an MgO barrier layer.   
     
     
         16 . The method of  claim 15 , wherein the step of forming a first MgO-source layer comprises forming a first Mg layer. 
     
     
         17 . The method of  claim 15 , wherein the step of forming a third MgO-source layer comprises forming a third Mg layer. 
     
     
         18 . The method of  claim 15 , where the first chamber and the second chamber are different chambers. 
     
     
         19 . The method of  claim 15 , where the second chamber and the third chamber are different chambers. 
     
     
         20 . The method of  claim 15 , where each of the first chamber, the second chamber, and the third chamber are different chambers.