Magnetoresistive element and magnetic memory

Abstract

A magnetoresistive element according to an embodiment includes: a first layer; a first magnetic layer; a second magnetic layer disposed between the first layer and the first magnetic layer; a nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; and an insulating layer disposed at least on side surfaces of the nonmagnetic layer, the first layer including: at least one element selected from a first group consisting of Hf, Zr, Al, Cr, and Mg; and at least one element selected from a second group consisting of Ta, W, Mo, Nb, Si, Ge, Be, Li, Sn, Sb, and P, and the insulating layer including at least one element selected from the first group.

1 : A magnetoresistive element comprising:
 a first layer;   a first magnetic layer;   a second magnetic layer disposed between the first layer and the first magnetic layer;   a nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; and   an insulating layer disposed at least on side surfaces of the nonmagnetic layer,   the first layer including: at least one element selected from a first group consisting of Hf, Zr, Al, Cr, and Mg; and at least one element selected from a second group consisting of Ta, W, Mo, Nb, Si, Ge, Be, Li, Sn, Sb, and P, and   the insulating layer including at least one element selected from the first group.   
     
     
         2 : The magnetoresistive element according to  claim 1 , wherein the first layer includes an alloy of at least one element selected from the first group, and at least one element selected from the second group. 
     
     
         3 : The magnetoresistive element according to  claim 1 , wherein the first layer has a first region and a second region disposed between the first region and the second magnetic layer, and the at least one element selected from the second group has a higher concentration in the second region than in the first region. 
     
     
         4 : The magnetoresistive element according to  claim 1 , wherein the first layer has a multilayer structure including a second layer including at least one element selected from the first group, and a third layer including at least one element selected from the second group. 
     
     
         5 : The magnetoresistive element according to  claim 1 , wherein:
 the second magnetic layer includes a third magnetic layer, a fourth magnetic layer disposed between the third magnetic layer and the nonmagnetic layer, and a fourth layer disposed between the third magnetic layer and the fourth magnetic layer;   the third magnetic layer includes at least one of an alloy having a L1 0  structure containing Fe or MnGa, an artificial superlattice containing Co, CoCrPt, a MnGa alloy having a DO 22  structure, or a rare earth magnetic compound; and   the fourth layer includes at least one of B, Zr, Hf, Ta, Nb, Mo, W, Ti, V, Cr, Mn, Ni, Cu, Ru, Ag, Mg, or a rare earth element.   
     
     
         6 : The magnetoresistive element according to  claim 5 , further comprising a fifth layer disposed between the first layer and the third magnetic layer, the fifth layer including at least one of Hf, Zr, Al, Cr, or Mg. 
     
     
         7 : The magnetoresistive element according to  claim 5 , further comprising a fifth layer disposed between the first layer and the third magnetic layer, the fifth layer including at least one of Ru, Pt, Pd, Mo, W, or Ti. 
     
     
         8 : The magnetoresistive element according to  claim 5 , further comprising a fifth layer disposed between the first layer and the third magnetic layer, the fifth layer including a nitride of at least one of Hf, Zr, Al, Cr, Ti, Sc, or Mg. 
     
     
         9 : A magnetoresistive element comprising:
 a first layer;   a first magnetic layer;   a second magnetic layer disposed between the first layer and the first magnetic layer;   a nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; and   an insulating layer disposed on at least side surfaces of the nonmagnetic layer,   the first layer including: at least one of Hf, Zr, Al, Cr, or Mg; or at least one of Ru, Pt, Pd, Mo, W, or Ti,   the second magnetic layer including at least one of Hf, Zr, Al, Cr, or Mg, and   the insulating layer including at least one of Hf, Zr, Al, Cr, or Mg.   
     
     
         10 : The magnetoresistive element according to  claim 9 , wherein:
 the second magnetic layer includes a third magnetic layer, a fourth magnetic layer disposed between the third magnetic layer and the nonmagnetic layer, and a second layer disposed between the third magnetic layer and the fourth magnetic layer;   the third magnetic layer includes at least one of an alloy having a L1 0  structure containing Fe or MnGa, an artificial superlattice containing Co, CoCrPt, a MnGa alloy having a DO 22  structure, or a rare earth magnetic compound;   the second layer includes at least one of B, Zr, Hf, Ta, Nb, Mo, W, Ti, V, Cr, Mn, Ni, Cu, Ru, Ag, Mg, or a rare earth element; and   at least one of the third magnetic layer and the fourth magnetic layer includes at least one of Hf, Zr, Al, Cr, or Mg.   
     
     
         11 : A magnetic memory comprising:
 the magnetoresistive element according to  claim 1 ;   a first wiring electrically connected to the first magnetic layer of the magnetoresistive element; and   a second wiring electrically connected to the second magnetic layer of the magnetoresistive element.   
     
     
         12 : The memory according to  claim 11 , wherein the first layer includes an alloy of at least one element selected from the first group, and at least one element selected from the second group. 
     
     
         13 : The memory according to  claim 11 , wherein the first layer has a first region and a second region disposed between the first region and the second magnetic layer, and the at least one element selected from the second group has a higher concentration in the second region than in the first region. 
     
     
         14 : The memory element according to  claim 11 , wherein the first layer has a multilayer structure including a second layer including at least one element selected from the first group, and a third layer including at least one element selected from the second group. 
     
     
         15 : The memory according to  claim 11 , wherein:
 the second magnetic layer includes a third magnetic layer, a fourth magnetic layer disposed between the third magnetic layer and the nonmagnetic layer, and a fourth layer disposed between the third magnetic layer and the fourth magnetic layer;   the third magnetic layer includes at least one of an alloy having a L1 0  structure containing Fe or MnGa, an artificial superlattice containing Co, CoCrPt, a MnGa alloy having a DO 22  structure, or a rare earth magnetic compound; and   the fourth layer includes at least one of B, Zr, Hf, Ta, Nb, Mo, W, Ti, V, Cr, Mn, Ni, Cu, Ru, Ag, Mg, or a rare earth element.   
     
     
         16 : The memory according to  claim 15 , further comprising a fifth layer disposed between the first layer and the third magnetic layer, the fifth layer including at least one of Hf, Zr, Al, Cr, or Mg. 
     
     
         17 : The memory according to  claim 15 , further comprising a fifth layer disposed between the first layer and the third magnetic layer, the fifth layer including at least one of Ru, Pt, Pd, Mo, W, or Ti. 
     
     
         18 : The memory according to  claim 15 , further comprising a fifth layer disposed between the first layer and the third magnetic layer, the fifth layer including a nitride of at least one of Hf, Zr, Al, Cr, Ti, Sc, or Mg. 
     
     
         19 : A magnetic memory comprising:
 the magnetoresistive element according to  claim 9 ;   a first wiring electrically connected to the first magnetic layer of the magnetoresistive element; and   a second wiring electrically connected to the second magnetic layer of the magnetoresistive element.   
     
     
         20 : The memory according to  claim 19 , wherein:
 the second magnetic layer includes a third magnetic layer, a fourth magnetic layer disposed between the third magnetic layer and the nonmagnetic layer, and a second layer disposed between the third magnetic layer and the fourth magnetic layer;   the third magnetic layer includes at least one of an alloy having a L1 0  structure containing Fe or MnGa, an artificial superlattice containing Co, CoCrPt, a MnGa alloy having a DO 22  structure, or a rare earth magnetic compound; and   the second layer includes at least one of B, Zr, Hf, Ta, Nb, Mo, W, Ti, V, Cr, Mn, Ni, Cu, Ru, Ag, Mg, or a rare earth element; and   at least one of the third magnetic layer and the fourth magnetic layer includes at least one of Hf, Zr, Al, Cr, or Mg.   
     
     
         21 : The magnetoresistive element according to  claim 4 , wherein the third layer is disposed between the second layer and the second magnetic layer.