Solid-state image sensor and camera

Abstract

The solid-state image sensor includes image sensing pixels, first and second focus detection pixels configured to respectively detect lights passing through different regions of a pupil of an image sensing lens. The sensor includes a semiconductor substrate including photoelectric converters of the image sensing pixels, a photoelectric converter and a first well contact region of the first focus detection pixel, and a photoelectric converter and a second well contact region of the second focus detection pixel, a first contact plug electrically connected to the first well contact region, and a second contact plug electrically connected to the second well contact region. The relative position of the first well contact region in the first focus detection pixel differs from a relative position of the second well contact region in the second focus detection pixel.

1 .- 13 . (canceled) 
     
     
         14 . A solid-state image sensor comprising an image sensing pixel configured to sense an image of an object, a first pixel configured to detect light passing through a first region of a pupil of an image sensing lens, and a second pixel configured to detect light passing through a second region of the pupil, which is different from the first region, wherein
 the image sensing pixel includes a photoelectric converter, and   the first pixel includes a photoelectric converter, a first semiconductor region through which a well potential is supplied, and a transistor,   wherein the photoelectric converter of the first pixel and the first semiconductor region of the first pixel are arranged in a region in the first pixel, the region of the first pixel corresponding to a region in the image sensing pixel, and the photoelectric converter of the image sensing pixel being arranged in the region in the image sensing pixel, and   wherein the transistor of the first pixel is arranged in a region between the photoelectric convertor of the image sensing pixel and the first semiconductor region of the first pixel.   
     
     
         15 . The sensor according to  claim 14 , wherein the first pixel includes a first light shielding portion configured to shield the first semiconductor region from light. 
     
     
         16 . The sensor according to  claim 15 , wherein the first pixel further includes a first contact plug electrically connected to the first semiconductor region, the first contact plug being electrically connected to the first light shielding portion. 
     
     
         17 . The sensor according to  claim 14 , wherein the first semiconductor region is arranged in an active region in which the photoelectric convertor of the first pixel is arranged. 
     
     
         18 . The sensor according to  claim 14 , wherein the first pixel and the second pixel constitute a pair for phase difference detection. 
     
     
         19 . The sensor according to  claim 14 , wherein the transistor is one of a reset transistor, an amplification transistor, a transfer transistor, and a selection transistor. 
     
     
         20 . The sensor according to  claim 14 , wherein the second pixel includes a photoelectric converter, a second semiconductor region through which a well potential is supplied,
 wherein the photoelectric converter of the second pixel and the second semiconductor region of the second pixel are arranged in a region in the second pixel, the region in the second pixel corresponding to a region in the image sensing pixel, and the photoelectric converter of the image sensing pixel being arranged in the region in the image sensing pixel.   
     
     
         21 . The sensor according to  claim 20 , wherein a position of the first semiconductor region within the first pixel relative to an amplification transistor of the first pixel is different from a position of the second semiconductor region within the second pixel relative to an amplification transistor of the second pixel. 
     
     
         22 . The sensor according to  claim 20 , wherein the second pixel further includes a second light shielding portion configured to shield the second semiconductor region from light, and a second contact plug electrically connected to the second semiconductor region. 
     
     
         23 . The sensor according to  claim 22 , wherein the second contact plug is electrically connected to the first light shielding portion. 
     
     
         24 . A camera comprising:
 a solid-state image sensor defined in  claim 14 ; and   a processing unit configured to process a signal output from the solid-state image sensor.