Mask etch for patterning

Abstract

A hard mask layer is deposited on a feature layer over a substrate. The hard mask layer comprises an organic mask layer. An opening in the organic mask layer is formed using a first gas comprising a halogen element at a first temperature greater than a room temperature to expose a portion of the feature layer. In one embodiment, a gas comprising a halogen element is supplied to a chamber. An organic mask layer on an insulating layer over a substrate is etched using the halogen element at a first temperature to form an opening to expose a portion of the insulating layer.

What is claimed is: 
     
         1 . A system to manufacture an electronic device, comprising:
 a processing chamber having a stage to position a wafer comprising a first hard mask layer on a feature layer over a substrate, the first hard mask layer comprising an organic mask layer, and the processing chamber comprising an inlet to input a first gas to provide a first plasma comprising a halogen element; and   at least one power source coupled to the processing chamber, wherein the processing chamber has a first configuration to form an opening in the first hard mask layer using the first plasma at a first temperature greater than a room temperature to expose a portion of the feature layer.   
     
     
         2 . The system of  claim 1 , wherein the organic mask layer comprises boron, and wherein the processing chamber comprises an outlet to remove a second gas comprising the dopant coupled to the halogen element. 
     
     
         3 . The system of  claim 1 , wherein a second hard mask layer is deposited on the first hard mask layer, and wherein the chamber has a second configuration to form an opening in the second hard mask layer using a second plasma at a second temperature lower than the first temperature. 
     
     
         4 . The system of  claim 1 , wherein the first plasma comprises an oxygen element, and wherein the processing chamber has a third configuration to adjust one or more parameters to control a profile of the opening, a critical diameter of the opening, or both, the one or more parameters comprising the first temperature, a gas flow rate, a bias power, a pressure, a source power, time, or any combination thereof. 
     
     
         5 . The system of  claim 1 , the processing chamber has a fourth configuration to form a passivation layer on a sidewall of the opening using the first plasma. 
     
     
         6 . The system of  claim 1 , wherein the feature layer comprises one or more insulating layers, one or more conductive layers, one or more semiconductor layers, or any combination thereof.