Semiconductor device and method of manufacturing the same

Abstract

A method of manufacturing a semiconductor device includes providing a semiconductor substrate, forming, over a main surface the semiconductor substrate, a first insulating film, forming, over the first insulating film, an Al-containing conductive film containing aluminum as a main component, patterning the Al-containing conductive film to form a pad, forming, over the first insulating film, a second insulating film to cover the pad therewith, forming an opening in the second insulating film, and electrically coupling a copper wire to the pad exposed from the opening.

What is claimed is: 
     
         1 . A method of manufacturing a semiconductor device, the method comprising:
 (a) providing a semiconductor substrate;   (b) forming, over a main surface the semiconductor substrate, a first insulating film;   (c) forming, over the first insulating film, an Al-containing conductive film containing aluminum as a main component;   (d) patterning the Al-containing conductive film to form a pad;   (e) forming, over the first insulating film, a second insulating film to cover the pad therewith;   (f) forming an opening in the second insulating film;   (g) electrically coupling a copper wire to the pad exposed from the opening;   (h) after the (c) and before the (g), forming a first conductor film over the Al-containing conductive film; and   (i) after the (h) and before the (g), forming a second conductor film over the first conductor film,   wherein the first conductor film includes a single-layer film or a laminated film including one or more layers of films selected from a group consisting of a titanium film, a titanium nitride film, a tantalum film, a tantalum nitride film, a tungsten film, a tungsten nitride film, a titanium-tungsten film, and a tantalum-tungsten film,   wherein the second conductor film comprises one or more metals selected from a group consisting of palladium, gold, ruthenium, rhodium, platinum, and iridium, and   wherein, in the (g), the copper wire is bonded to the second conductor film.   
     
     
         2 . The method of manufacturing the semiconductor device according to  claim 1 , wherein, in the (i), the second conductor film is formed by a sputtering method. 
     
     
         3 . The method of manufacturing the semiconductor device according to  claim 1 , wherein the second conductor film comprises a palladium film. 
     
     
         4 . The method of manufacturing the semiconductor device according to  claim 3 , wherein the first conductor film comprises a titanium film. 
     
     
         5 . The method of manufacturing the semiconductor device according to  claim 4 , wherein, in the (h), the first conductor film is formed by a sputtering method. 
     
     
         6 . The method of manufacturing the semiconductor device according to  claim 1 , wherein the (h) and the (i) are performed after the (f) and before the (g). 
     
     
         7 . The method of manufacturing the semiconductor device according to  claim 1 , wherein the (h) is performed after the (c) and before the (d),
 wherein, in the (d), a laminated film including the Al-containing conductive film, and the first conductor film over the Al-containing conductive film are patterned to form the pad, and   wherein the (i) is performed after the (f) and before the (g).   
     
     
         8 . The method of manufacturing a semiconductor device according to  claim 1 , wherein the (h) and the (i) are performed after the (c) and before the (d), and
 wherein, in the (d), a laminated film including the Al-containing conductive film, the first conductor film over the Al-containing conductive film, and the second conductor film over the first conductor film are patterned to form the pad.