Vapor phase growth apparatus and vapor phase growth method

Abstract

A vapor phase growth apparatus according to an embodiment includes a reaction chamber, a holder provided in the reaction chamber, the holder holding a substrate, a heater heating the substrate, a first reflector facing the holder, the heater being interposed between the first reflector and the holder, a second reflector provided between the first reflector and the heater, the second reflector having a compressive strength or a bending strength equal to or less than 1000 MPa or a Vickers hardness equal to or less than 8 GPa, the second reflector having a pattern, and a rotating shaft fixed to the holder, the rotating shaft rotating the holder.

What is claimed is: 
     
         1 . A vapor phase growth apparatus comprising:
 a reaction chamber;   a holder provided in the reaction chamber, the holder   holding a substrate;   a heater heating the substrate;   a first reflector facing the holder, the heater being interposed between the first reflector and the holder;   a second reflector provided between the first reflector and the heater, the second reflector having a compressive strength or a bending strength equal to or less than 1000 MPa or a Vickers hardness equal to or less than 8 GPa, the second reflector having a pattern; and   a rotating shaft fixed to the holder, the rotating shaft rotating the holder.   
     
     
         2 . The vapor phase growth apparatus according to  claim 1 ,
 wherein at least one of the compressive strength, the bending strength, and the Vickers hardness of the second reflector is less than that of the first reflector.   
     
     
         3 . The vapor phase growth apparatus according to  claim 1 ,
 wherein the first reflector and the second reflector are separated from each other by a predetermined distance.   
     
     
         4 . The vapor phase growth apparatus according to  claim 1 ,
 wherein the second reflector is made of a graphite sheet or graphite.   
     
     
         5 . A vapor phase growth apparatus comprising:
 a reaction chamber;   a holder provided in the reaction chamber, the holder holding a substrate;   a heater heating the substrate;   a first reflector facing the holder, the heater being   interposed between the first reflector and the holder;   a second reflector provided between the first reflector and the heater, the second reflector including a first portion with a first sub-pattern and a second portion with a second sub-pattern, the first portion and the second portion being relatively rotatable; and   a rotating shaft fixed to the holder, the rotating shaft rotating the holder.   
     
     
         6 . The vapor phase growth apparatus according to  claim 5 ,
 wherein the first portion and the second portion are configured to rotate relatively to change a degree of overlap between the first sub-pattern and the second sub-pattern.   
     
     
         7 . The vapor phase growth apparatus according to  claim 5 ,
 wherein the first portion and the second portion are configured to rotate relatively to change an opening area of the second reflector.   
     
     
         8 . The vapor phase growth apparatus according to  claim 5 ,
 wherein at least one of the first sub-pattern and the second sub-pattern has a hole pattern, and   the hole pattern does not have a symmetrical axis passing through the rotation center of the relative rotation between the first portion and the second portion.   
     
     
         9 . A vapor phase growth method comprising:
 heating a first substrate using a heater and a first reflector, the heater being interposed between the first reflector and the first substrate;   measuring a characteristic distribution of the first substrate under predetermined process conditions;   providing a second reflector between the first reflector and the heater, the second reflector having a pattern based on the characteristic distribution, the second reflector having a compressive strength or a bending strength equal to or less than 1000 MPa or a Vickers hardness equal to or less than 8 GPa;   heating a second substrate, using the heater, the first reflector, and the second reflector; and   forming a film, on the second substrate under the predetermined process conditions.   
     
     
         10 . The vapor phase growth method according to  claim 9 ,
 wherein at least one of the compressive strength, the bending strength, and the Vickers hardness of the second reflector is less than that of the first reflector.   
     
     
         11 . The vapor phase growth method according to  claim 9 ,
 wherein the first reflector and the second reflector are separated from, each other by a predetermined distance.   
     
     
         12 . The vapor phase growth method according to  claim 9 ,
 wherein, the second reflector is made of a graphite sheet or graphite.   
     
     
         13 . The vapor phase growth method according to  claim 9 ,
 wherein the characteristic distribution is a temperature distribution.   
     
     
         14 . A vapor phase growth method comprising:
 heating a first substrate, using a heater and a reflector with a first pattern, the heater being interposed between the reflector and the first substrate;   measuring a characteristic distribution of the first substrate under predetermined process conditions; and   forming a film on a second substrate under the predetermined process conditions, using the heater and the reflector changed to a second pattern different from the first pattern on the basis of the characteristic distribution.   
     
     
         15 . The vapor phase growth method according to  claim 14 ,
 wherein the reflector is configured to attach and detach an adjuster, and   the adjuster is attached or detached to change the pattern of the reflector from the first pattern to the second pattern.   
     
     
         16 . The vapor phase growth method according to  claim 14 ,
 wherein the reflector includes a first portion with a first sub-pattern and a second portion with a second sub-pattern, and   the first portion and the second portion are configured to rotate relatively to change a pattern of the reflector from the first pattern to the second pattern.   
     
     
         17 . The vapor phase growth method according to  claim 14 ,
 wherein the characteristic distribution is a temperature distribution.