US2018062033A1PendingUtilityA1

Light emitting device

57
Assignee: EPISTAR CORPPriority: Apr 25, 2013Filed: Oct 25, 2017Published: Mar 1, 2018
Est. expiryApr 25, 2033(~6.7 yrs left)· nominal 20-yr term from priority
Inventors:Yi-Ming ChenHao-Min KuChih-Chiang LuTzu-Chieh Hsu
H01L 33/10H01L 33/38H10H 20/831H10H 20/835H10H 20/814
57
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Claims

Abstract

This disclosure discloses a light-emitting device. The light-emitting device comprises a light-emitting stack having a first-type semiconductor layer, a second-type semiconductor layer, and an active layer formed between the first-type semiconductor layer and the second-type semiconductor layer; a reflective structure formed on the first-type semiconductor layer; and a first interface and a second interface formed between light-emitting stack and the reflective structure; wherein a critical angle at the first interface for a light emitted from the light-emitting stack is larger than that at the second interface; wherein the reflective structure electrically connects to the first-type semiconductor layer at the first interface, and an area of the first interface is more than an area of the second interface.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A light-emitting device, comprising:
 a light-emitting stack having a first-type semiconductor layer, a second-type semiconductor layer, and an active layer formed between the first-type semiconductor layer and the second-type semiconductor layer;   a reflective structure formed on the first-type semiconductor layer; and   a first interface and a second interface formed between light-emitting stack and the reflective structure; wherein a critical angle at the first interface for a light emitted from the light-emitting stack is larger than that at the second interface; wherein the reflective structure electrically connects to the first-type semiconductor layer at the first interface, and an area of the first interface is more than an area of the second interface.   
     
     
         2 . The light-emitting device of  claim 1 , wherein the reflective structure comprises a transparent conductive layer, and the first interface is between the first-type semiconductor layer and the transparent conductive layer. 
     
     
         3 . The light-emitting device of  claim 1 , wherein the reflective structure comprises a void, and the second interface is between the first-type semiconductor layer and the void. 
     
     
         4 . The light-emitting device of  claim 2 , wherein the reflective structure comprises a metal layer contacting the transparent conductive layer. 
     
     
         5 . The light-emitting device of  claim 3 , further comprising an electrode on the second-type semiconductor layer, wherein the void has a width larger than a width of the electrode from a cross section view of the light-emitting device. 
     
     
         6 . The light-emitting device of  claim 5 , wherein the void is formed at a position corresponding to the electrode. 
     
     
         7 . The light-emitting device of  claim 1 , further comprising a bonding structure covering the reflective structure and contacting the first-type semiconductor layer. 
     
     
         8 . A light-emitting device, comprising:
 a light-emitting stack having a first-type semiconductor layer, a second-type semiconductor layer, and an active layer formed between the first-type semiconductor layer and the second-type semiconductor layer;   a reflective structure formed on the first-type semiconductor layer; and   a first interface and a second interface formed between the light-emitting stack and the reflective structure; wherein the reflective structure comprises a transparent conductive layer and a void formed in the transparent conductive layer, and the first interface is formed between the transparent conductive layer and the first-type semiconductor layer; and   wherein a critical angle at the first interface for a light emitted from the light-emitting stack is larger than that at the second interface, and the reflective structure electrically connects to the first-type semiconductor layer at the first interface.   
     
     
         9 . The light-emitting device of  claim 8 , wherein the reflective structure further comprises a metal layer contacting the transparent conductive layer. 
     
     
         10 . The light-emitting device of  claim 8 , wherein the void contains air, N 2 , He, or Ar. 
     
     
         11 . The light-emitting device of  claim 8 , wherein the void has a height smaller than 800 Å. 
     
     
         12 . The light-emitting device of  claim 8 , further comprising an electrode on the second-type semiconductor layer, wherein the void is at a position corresponding to the electrode. 
     
     
         13 . The light-emitting device of  claim 12 , wherein the void has a width larger than a width of the electrode structure from a cross section view of the light-emitting device. 
     
     
         14 . The light-emitting device of  claim 8 , wherein the second interface is formed between the void and the first-type semiconductor layer. 
     
     
         15 . A light-emitting device, comprising:
 a light-emitting stack comprises a first-type semiconductor layer, a second-type semiconductor layer, and an active layer formed between the first-type semiconductor layer and the second-type semiconductor layer;   a reflective structure formed on the first-type semiconductor layer; and   a bonding structure covering the reflective structure and contacting the first-type semiconductor layer;   wherein the reflective structure electrically connects to the first-type semiconductor layer.   
     
     
         16 . The light-emitting device of  claim 15 , wherein a first interface and a second interface formed between the light-emitting stack and the reflective structure, and a critical angle at the first interface for a light emitted from the light-emitting stack is larger than that at the second interface; wherein the reflective structure electrically connects to the first-type semiconductor layer at the first interface. 
     
     
         17 . The light-emitting device of  claim 16 , wherein a third interface is formed between the bonding structure and the first-type semiconductor layer, and a critical angle at the third interface for the light emitted from the light-emitting stack is larger than that at the second interface. 
     
     
         18 . The light-emitting device of  claim 15 , wherein the bonding structure is between a substrate and the light-emitting stack. 
     
     
         19 . The light-emitting device of  claim 15 , wherein the bonding structure comprises a first bonding layer contacting the reflective layer and a second bonding layer devoid of contacting to the reflective layer. 
     
     
         20 . The light-emitting device of  claim 15 , wherein the bonding structure comprises metal material.

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