Capacitor and manufacturing method therefor

Abstract

A capacitor that includes a conductive metal base material with a porous part, a dielectric layer on the porous part, and an upper electrode on the dielectric layer, and has an electrostatic capacitance formation part only on one principal surface side of the capacitor.

1 . A capacitor comprising:
 a conductive metal base material having a porous part defining at least part of a first principal surface of the conductive metal base material, the conductive metal base material having a second principal surface opposed to the first principal surface;   a dielectric layer on the porous part that defines the at least part of the first principal surface and not on the second principal surface; and   an upper electrode on the dielectric layer.   
     
     
         2 . The capacitor according to  claim 1 , wherein the conductive metal base material further comprises a supporting part that defines the second principal surface. 
     
     
         3 . The capacitor according to  claim 1 , wherein the conductive metal base material further comprises a low-porosity part that is lower in porosity than the porous part. 
     
     
         4 . The capacitor according to  claim 1 , wherein the low-porosity part surrounds the porous part. 
     
     
         5 . The capacitor according to  claim 1 , wherein the upper electrode is spaced from the dielectric layer along an edge of the capacitor. 
     
     
         6 . The capacitor according to  claim 5 , further comprising an insulating part between the upper electrode and the dielectric layer at the edge of the capacitor. 
     
     
         7 . The capacitor according to  claim 1 , further comprising an insulating part between the conductive metal base material and the upper electrode at an end of the capacitor. 
     
     
         8 . The capacitor according to  claim 7 , wherein the conductive metal base material, the dielectric layer, the insulating part, and the upper electrode are disposed in this order at the end of the capacitor. 
     
     
         9 . The capacitor according to  claim 7 , wherein the conductive metal base material, the insulating part, the dielectric layer, and the upper electrode are disposed in this order at the end of the capacitor. 
     
     
         10 . A method for manufacturing a capacitor, the method comprising:
 preparing a conductive substrate comprising a porous metal layer; and   at only a first principal surface of the conductive substrate, dividing the porous metal layer into a plurality of porous parts;   forming a dielectric layer to cover the plurality of porous parts; and   forming an upper electrode on the dielectric layer.   
     
     
         11 . The method for manufacturing a capacitor according to  claim 10 , wherein the conductive metal base material further comprises a supporting part at a second principal surface thereof. 
     
     
         12 . The method for manufacturing a capacitor according to  claim 10 , wherein the dielectric layer is formed by an atomic layer deposition method. 
     
     
         13 . The method for manufacturing a capacitor according to  claim 10 , wherein the upper electrode is formed by an atomic layer deposition method. 
     
     
         14 . The method for manufacturing a capacitor according to  claim 10 , wherein the conductive metal base material further comprises a low-porosity part that is lower in porosity than the porous part. 
     
     
         15 . The method for manufacturing a capacitor according to  claim 10 , wherein the low-porosity part surrounds the porous part. 
     
     
         16 . The method for manufacturing a capacitor according to  claim 10 , further comprising forming an insulating part between the upper electrode and the dielectric layer. 
     
     
         17 . The method for manufacturing a capacitor according to  claim 10 , further comprising forming an insulating part between the conductive metal base material and the upper electrode.