Systems for tunable nanocube plasmonic resonators and methods for forming

Abstract

The present disclosure is directed to systems for tuning nanocube plasmonic resonators and methods for forming tunable plasmonic resonators. A tunable plasmonic resonator system can include a substrate and a nanostructure positioned on a surface of the substrate. The substrate can include a semiconductor material having a carrier density distribution. A junction can be formed between the nanostructure and the substrate forming a Schottky junction. Changing the carrier density distribution of the semiconductor material can change a plasmonic response of the plasmonic resonator.

What is claimed is: 
     
         1 . A tunable plasmonic resonator system, comprising:
 a substrate, wherein the substrate includes a semiconductor material having a carrier density distribution;   an array of plasmonic resonators comprising an array of nanostructures coupled to the substrate; and   a dielectric layer positioned between the substrate and the array of nanostructures;   wherein a plasmonic response of at least one plasmonic resonator is variable by varying the carrier density of the dielectric layer.   
     
     
         2 . The system of  claim 1 , wherein the semiconductor material includes one of silicon, germanium, gallium arsenide, indium gallium arsenide, gallium phosphide, or indium phosphide. 
     
     
         3 . The system of  claim 1 , further comprising a voltage source, wherein the voltage source is configured to provide a voltage between the substrate and the array of nanostructures. 
     
     
         4 . The system of  claim 3 , wherein the voltage source includes a pair of electrodes positioned adjacent to the substrate. 
     
     
         5 . The system of  claim 1 , wherein the properties of the dielectric layer are adjustable by varying the voltage applied between the array of nanostructures and the substrate. 
     
     
         6 . The system of  claim 1 , wherein a thickness of the dielectric layer is adjustable by varying the voltage applied between the array of nanostructures and the substrate. 
     
     
         7 . The system of  claim 1 , wherein the plasmonic response of at least one plasmonic resonator corresponds to a response to an incident light. 
     
     
         8 . The system of  claim 1 , wherein varying the carrier density distribution changes an absorption spectrum of at least one nanostructure. 
     
     
         9 . The system of  claim 1 , wherein varying the carrier density distribution changes a resonance wavelength of at least one nanostructure. 
     
     
         10 . The system of  claim 1 , wherein varying the carrier density distribution modifies a reflectance spectrum of at least one nanostructure. 
     
     
         11 . The system of  claim 1 , wherein the array of nanostructures is embedded in a fluid matrix or a solid matrix on the surface of the substrate. 
     
     
         12 . The system of  claim 1 , wherein the array of nanostructures includes at least one of aluminum, silver, or gold. 
     
     
         13 . The system of  claim 1 , wherein at least one nanostructure in the array of nanostructures is a nanocube. 
     
     
         14 . A method for forming an array of tunable plasmonic resonators, comprising:
 forming a dielectric layer on a substrate, wherein the substrate includes a semiconductor material having a carrier density distribution;   forming an array of plasmonic resonators by depositing an array of nanostructures on the dielectric layer;   applying a voltage between the array of nanostructures and the substrate; and   controlling the carrier density distribution to tune a plasmonic response of at least one plasmonic resonator.   
     
     
         15 . The method of  claim 14 , wherein the substrate is a metal-oxide-semiconductor device including a gate structure. 
     
     
         16 . The method of  claim 14 , further comprising generating a magnetic field using a pair of electrodes positioned adjacent to the substrate. 
     
     
         17 . The method of  claim 14 , further comprising varying the voltage applied between the array of nanostructures and the substrate to adjust the properties of the dielectric layer. 
     
     
         18 . The method of  claim 14 , further comprising varying the voltage applied between the array of nanostructures and the substrate to adjust the thickness of the dielectric layer. 
     
     
         19 . The method of  claim 14 , wherein the plasmonic response of at least one plasmonic resonator corresponds to a response to an incident light. 
     
     
         20 . The method of  claim 14 , further comprising tuning an absorption spectrum of at least one nanostructure by controlling the carrier density distribution.