Fe-Pt-BASED SPUTTERING TARGET WITH DISPERSED C GRAINS

Abstract

A sintered compact sputtering target in which a composition ratio based on atomicity is represented by a formula of (Fe 100−X —Pt X ) 100−A —C A (provided A is a number which satisfies 20≦A≦50 and X is a number which satisfies 35≦X≦55), wherein C grains are finely dispersed in an alloy, and the relative density is 90% or higher. The production of a magnetic thin film with granular structure is provided without using an expensive simultaneous sputtering device, and a high-density sputtering target capable of reducing the amount of particles generated during sputtering is provided.

We claim: 
     
         1 . A sintered compact sputtering target in which a composition ratio based on atomicity is represented by a formula of (Fe 100−X —Pt X ) 100−A —C A  provided A is a number which satisfies 20≦A≦50 and X is a number which satisfies 35≦X≦55, wherein C grains are finely dispersed in an alloy, and the relative density is 90% or higher. 
     
     
         2 . A sintered compact sputtering target in which a composition ratio based on atomicity is represented by a formula of (Fe 100−X−Y —Pt X —Cu Y ) 100−A —C A  provided that A is a number which satisfies 20≦A≦50, X is a number which satisfies 35≦X≦55, and Y is a number which satisfies 0.5≦Y≦15, wherein C grains are finely dispersed in an alloy, and the relative density is 90% or higher.