Interconnect structure with improved conductive properties and associated systems and methods

Abstract

Interconnect structures with improved conductive properties are disclosed herein. In one embodiment, an interconnect structure can include a first conductive member coupled to a first semiconductor die and a second conductive member coupled to second semiconductor die. The first conductive member includes a recessed surface defining a depression. The second conductive member extends at least partially into the depression of the first conductive member. A bond material within the depression can at least partially encapsulate the second conductive member and thereby bond the second conductive member to the first conductive member.

I/We claim: 
     
         1 . A method of forming a semiconductor die assembly, the method comprising:
 inserting at least a portion of a first conductive member on a first semiconductor die into at least a portion of a depression of a second conductive member on a second semiconductor die, wherein the second semiconductor die includes a dielectric material and a conductive trace, wherein the dielectric material includes an opening that (a) extends at least partially through the dielectric material, and (b) exposes a portion of the conductive trace, and wherein the second conductive member projects outwardly from the exposed portion of the conductive trace; and   at least partially filling the depression of the second conductive member with a bonding material.   
     
     
         2 . The method of  claim 1  wherein the portion of the first conductive member is a first portion, the method further comprising:
 reacting the bond material with a second portion of the first conductive member to form a first intermetallic at least partially within the depression of the second conductive member; and 
 reacting the bond material with a portion of the second conductive member to form a second intermetallic at least partially within the depression of the second conductive member. 
 
     
     
         3 . The method of  claim 2  wherein the first and second intermetallics each include tin/nickel (SnNi) or tin/copper (SnCu), and wherein the bond material includes tin/silver (SnAg). 
     
     
         4 . The method of  claim 1 , further comprising forming a redistribution network on the first semiconductor die, wherein the first semiconductor die includes a plurality of through-substrate vias (TSVs) electrically coupled to the redistribution network. 
     
     
         5 . The method of  claim 1  wherein the second conductive member includes vertically straight sidewalls. 
     
     
         6 . The method of  claim 1  wherein the second conductive member is generally aligned with the depression of the second conductive member. 
     
     
         7 . The method of  claim 1  wherein the bond material in the depression covers the portion of the first conductive member. 
     
     
         8 . A method of forming a semiconductor device, the method comprising:
 forming a semiconductor die including a dielectric material having an opening, and conductive feature at least partially exposed through the opening;   depositing a bond material within a depression located in a first conductive member, wherein the first conductive member projects from the conductive feature and extends beyond the dielectric material, and wherein the first conductive member is generally aligned with the opening of the dielectric material; and   inserting at least a portion of a second conductive member into the bond material such that the bond material covers the portion of the second conductive member.   
     
     
         9 . The method of  claim 8 , further comprising heating the bond material to form intermetallics with the depression located in the first conductive member. 
     
     
         10 . The method of  claim 8  wherein the bond material includes metal solder. 
     
     
         11 . The method of  claim 8  wherein the semiconductor die is a first semiconductor die, the dielectric material is a first dielectric material, the opening is a first opening, and the conductive feature is a first conductive feature, the method further comprising:
 forming a second semiconductor die including a second dielectric material having a second opening, and a second conductive feature at least partially exposed through the opening; and 
 forming the second conductive member by depositing a conductive material in the second opening on the second conductive feature. 
 
     
     
         12 . A method of forming an interconnect structure, the method comprising:
 disposing a bond material within a depression located in a first conductive member; and   inserting at least a portion of a second conductive member into the bond material such that an outermost surface of the second conductive member is covered by the bond material, wherein the second conductive member—
 extends outwardly from a conductive trace of a semiconductor die, and includes generally vertical sidewalls. 
   
     
     
         13 . The method of  claim 12 , further comprising heating the bond material to fully convert the bond material into one or more intermetallics. 
     
     
         14 . The method of  claim 12  wherein the bond material includes solder, and wherein the method further includes reflowing the solder. 
     
     
         15 . The method of  claim 12 , further comprising:
 reacting the bond material with a portion of the first conductive member to form a first intermetallic at least partially within the depression; and   reacting the bond material with a portion of the second conductive member to form a second intermetallic at least partially within the depression.   
     
     
         16 . The method of  claim 15  wherein the first intermetallic and the second intermetallic each includes tin/nickel (SnNi). 
     
     
         17 . The method of  claim 15  wherein the first intermetallic includes tin/nickel (SnNi) and the second intermetallic includes tin/copper (SnCu).