Light emitting diode assembly structure

Abstract

A light emitting diode assembly structure includes a light emitting chip, a color converting layer, a light guiding member, and a reflecting member. The color converting layer coats the light emitting chip and the light guiding member coats the color converting layer. The planar or non-planar reflecting member is arranged over the light guiding member. The reflecting member is faced towards the light emitting chip and changes the range of illumination of the light emitted by the light emitting chip. The reflecting member can be arranged on a side of the color converting layer and light can be irradiated towards the exterior of the light emitting diode assembly structure.

What is claimed is: 
     
         1 . A light emitting diode assembly structure comprising:
 a light emitting chip;   a color converting layer, coated on the light emitting chip;   a light guiding member, arranged over the color converting layer; and   a reflecting member, arranged over the light guiding member,   wherein the reflecting member comprises a first reflecting surface faced towards the light emitting chip, and wherein the first reflecting surface is a surface selected from the group consisting of a planar, a concave, a convex, a parabolic, a multi-segmented, a curved surface, and a combination thereof.   
     
     
         2 . The light emitting diode assembly structure of  claim 1 , wherein the light guiding member is coated on the color converting layer. 
     
     
         3 . The light emitting diode assembly structure of  claim 1 , wherein the light guiding member is arranged on a top surface of the color converting layer. 
     
     
         4 . The light emitting diode assembly structure of  claim 1 , wherein the light emitting chip is a chip selected from the group consisting of a horizontal type light emitting diode chip, a vertical type light emitting diode chip, a flip chip type light emitting diode chip, and a combination thereof. 
     
     
         5 . The light emitting diode assembly structure of  claim 1 , wherein the light emitting diode assembly structure further comprises a substrate arranged on a bottom surface of the light emitting chip. 
     
     
         6 . The light emitting diode assembly structure of  claim 5 , wherein the substrate comprises a second reflecting surface faced towards the first reflecting surface of the reflecting member. 
     
     
         7 . The light emitting diode assembly structure of  claim 1 , wherein the light guiding member comprises silicon and additional material, wherein the weight of the additional material is within a range of about 5% to about 15% of the weight of the silicon, and wherein the additional material is selected from the group consisting of organic diffusion particles, inorganic diffusion particles, and a combination thereof. 
     
     
         8 . The light emitting diode assembly structure of  claim 7 , wherein a refractive index of the silicon is substantially in a range of 1.4 to 1.6, and wherein a refractive index of the additional material is substantially in a range of 1.5 to 1.8. 
     
     
         9 . The light emitting diode assembly structure of  claim 7 , wherein the organic diffusion particles comprise an organic silicone compound or an acrylic compound, and wherein the inorganic diffusion particles comprise silica or a calcium carbonate compound. 
     
     
         10 . A light emitting diode assembly structure comprising:
 a light emitting chip;   a light guiding member, arranged over the light emitting chip;   a color converting layer, arranged over the light guiding member; and   a reflecting member, arranged over the color converting layer,   wherein the reflecting member comprises a first reflecting surface faced towards the light emitting chip, and wherein the first reflecting surface is a surface selected from the group consisting of a planar, a concave, a convex, a parabolic, a multi-segmented, a curved surface, and a combination thereof.   
     
     
         11 . The light emitting diode assembly structure of  claim 10 , wherein the light guiding member is coated on the light emitting chip, and the color converting layer is coated on the light guiding member. 
     
     
         12 . The light emitting diode assembly structure of  claim 10 , wherein the light guiding member is arranged on the light emitting chip, and the light guiding member and the light emitting chip are coated by the color converting layer. 
     
     
         13 . The light emitting diode assembly structure of  claim 10 , wherein the light emitting chip is a chip selected from the group consisting of a horizontal type light emitting diode chip, a vertical type light emitting diode chip, a flip chip type light emitting diode chip, and a combination thereof. 
     
     
         14 . The light emitting diode assembly structure of  claim 10 , wherein the light emitting diode assembly structure further comprises a substrate arranged on a bottom surface of the light emitting chip. 
     
     
         15 . The light emitting diode assembly structure of  claim 14 , wherein the substrate comprises a second reflecting surface faced towards the second reflecting surface of the reflecting member. 
     
     
         16 . The light emitting diode assembly structure of  claim 10 , wherein the light guiding member comprises silicon and additional material, wherein the weight of the additional material is within a range of about 5% to about 15% of the weight of the silicon, and wherein the additional material is selected from the group consisting of organic diffusion particles, inorganic diffusion particles, and a combination thereof. 
     
     
         17 . The light emitting diode assembly structure of  claim 16 , wherein a refractive index of the silicon is substantially in a range of 1.4 to 1.6, and wherein a refractive index of the additional material is substantially in a range of 1.5 to 1.8. 
     
     
         18 . The light emitting diode assembly structure of  claim 16 , wherein the organic diffusion particles comprise an organic silicone compound or an acrylic compound, and wherein the inorganic diffusion particles comprise silica or a calcium carbonate compound. 
     
     
         19 . A light emitting diode assembly structure comprising:
 a light emitting chip;   a color converting layer, coated on the light emitting chip;   a reflecting member, arranged around a side of the color converting layer; and   a light guiding member, coated on a periphery of the color converting layer and the reflecting member,   wherein an inner surface of the reflecting member comprises a reflecting surface faced towards the light emitting chip, and wherein the reflecting surface is symmetric or asymmetric.   
     
     
         20 . The light emitting diode assembly structure of  claim 19 , wherein the reflecting surface is a surface selected from the group consisting of a planar, a concave, a convex, a parabolic, a multi-segmented, a curved surface, and a combination thereof. 
     
     
         21 . The light emitting diode assembly structure of  claim 19 , wherein a top end of the light guiding member comprises a light exiting surface, the light exiting surface is a continuous or discontinuous structure, wherein the light exiting surface are substantially planar, arc-shaped, n-shaped or v-shaped. 
     
     
         22 . The light emitting diode assembly structure of  claim 19 , wherein a width of the cross-section of the reflecting member increases gradually in a direction away from the light emitting chip. 
     
     
         23 . The light emitting diode assembly structure of  claim 19 , wherein the reflecting surface is a sealed and continuous surface. 
     
     
         24 . The light emitting diode assembly structure of  claim 19 , wherein the reflecting member is substantially a frustum. 
     
     
         25 . The light emitting diode assembly structure of  claim 19 , wherein the light guiding member comprises silicon and additional material, wherein the weight of the additional material is within a range of about 5% to about 15% of the weight of the silicon, and wherein the additional material is selected from the group consisting of organic diffusion particles, inorganic diffusion particles, and a combination thereof. 
     
     
         26 . The light emitting diode assembly structure of  claim 25 , wherein a refractive index of the silicon is substantially in a range of 1.4 to 1.6, and wherein a refractive index of the additional material is substantially in a range of 1.5 to 1.8. 
     
     
         27 . The light emitting diode assembly structure of  claim 25 , wherein the organic diffusion particles comprise an organic silicone compound or an acrylic compound, and wherein the inorganic diffusion particles comprise silica or a calcium carbonate compound. 
     
     
         28 . A light emitting diode assembly structure comprising:
 a light emitting chip;   a color converting layer, coated on the light emitting chip;   a light guiding member, arranged over the light emitting chip; and   a reflecting member, arranged over the light guiding member,   wherein the reflecting member comprises a first reflecting surface faced towards the light emitting chip, and wherein the first reflecting surface is a surface selected from the group consisting of a planar, a concave, a convex, a parabolic, a multi-segmented, a curved surface, and a combination thereof, and wherein the reflecting member comprises a top surface and a bottom surface, and wherein the reflecting member arranges a groove, the groove penetrates the top and bottom surfaces of the reflecting member.   
     
     
         29 . The light emitting diode assembly structure of  claim 28 , wherein the groove is substantially symmetrical under all rotations about its center. 
     
     
         30 . The light emitting diode assembly structure of  claim 28 , wherein the groove is a cross groove or a circular groove. 
     
     
         31 . The light emitting diode assembly structure of  claim 28 , wherein a width of the groove is in a range from substantially 0.05 mm to substantially 0.3 mm. 
     
     
         32 . The light emitting diode assembly structure of  claim 28 , wherein the groove comprises an upper end portion opposite to the light guiding member and a lower end portion adjacent to the light guiding member, and wherein a width of the upper end portion is more than or equal to a width of the lower end portion. 
     
     
         33 . The light emitting diode assembly structure of  claim 28 , wherein the light guiding member comprises silicon and additional material, wherein the weight of the additional material is within a range of about 5% to about 15% of the weight of the silicon, and wherein the additional material is selected from the group consisting of organic diffusion particles, inorganic diffusion particles, and a combination thereof. 
     
     
         34 . The light emitting diode assembly structure of  claim 33 , wherein a refractive index of the silicon is substantially in a range of 1.4 to 1.6, and wherein a refractive index of the additional material is substantially in a range of 1.5 to 1.8. 
     
     
         35 . The light emitting diode assembly structure of  claim 33 , wherein the organic diffusion particles comprise an organic silicone compound or an acrylic compound, and wherein the inorganic diffusion particles comprise silica or a calcium carbonate compound. 
     
     
         36 . A light emitting diode assembly structure comprising:
 a light emitting chip;   a color converting layer, coated on the light emitting chip;   a light guiding member, arranged over the light emitting chip; and   a reflecting member, arranged over the light guiding member,   wherein the reflecting member comprises a first reflecting surface faced towards the light emitting chip, and wherein the first reflecting surface is a surface selected from the group consisting of a planar, a concave, a convex, a parabolic, a multi-segmented, a curved surface, and a combination thereof, wherein the reflecting member comprises a first top surface and a first bottom surface, the light guiding member comprises a second top surface and a second bottom surface, and wherein the light emitting diode assembly structure arranges a groove, the groove penetrates from the first top surface of the reflecting member to a predetermined position between the second top surface of the light guiding member and the second bottom surface of the light guiding member.   
     
     
         37 . The light emitting diode assembly structure of  claim 36 , wherein the groove is substantially symmetrical under all rotations about its center. 
     
     
         38 . The light emitting diode assembly structure of  claim 36 , wherein the groove is a cross-shaped groove or a circular groove. 
     
     
         39 . The light emitting diode assembly structure of  claim 36 , wherein a width of the groove is in a range from substantially 0.05 mm to substantially 0.3 mm. 
     
     
         40 . The light emitting diode assembly structure of  claim 36 , wherein the groove comprises an upper end portion opposite to the color converting layer and a lower end portion adjacent to the color converting layer, and wherein a width of the upper end portion is more than or equal to a width of the lower end portion. 
     
     
         41 . The light emitting diode assembly structure of  claim 36 , wherein the light guiding member comprises silicon and additional material, wherein the weight of the additional material is within a range of about 5% to about 15% of the weight of the silicon, and wherein the additional material is selected from the group consisting of organic diffusion particles, inorganic diffusion particles, and a combination thereof. 
     
     
         42 . The light emitting diode assembly structure of  claim 41 , wherein a refractive index of the silicon is substantially in a range of 1.4 to 1.6, and wherein a refractive index of the additional material is substantially in a range of 1.5 to 1.8. 
     
     
         43 . The light emitting diode assembly structure of  claim 41 , wherein the organic diffusion particles comprise an organic silicone compound or an acrylic compound, and wherein the inorganic diffusion particles comprise silica or a calcium carbonate compound.