Active matrix image sensing device

Abstract

An active matrix image sensing device includes an image sensing substrate and a scintillator substrate. The image sensing substrate has a plurality of image sensing pixels. The scintillator substrate is disposed opposite to the image sensing substrate and includes a first substrate, a plurality of guiding members, a reflective layer and a scintillator layer. The guiding members are disposed on the first substrate and protruded from the first substrate toward the image sensing substrate. The guiding members are located corresponding to the image sensing pixels, respectively. The reflective layer is disposed on the guiding members, and the scintillator layer is disposed between the reflective layer and the image sensing substrate.

What is claimed is: 
     
         1 . An active matrix image sensing device, comprising:
 an image sensing substrate having a plurality of image sensing pixels; and   a scintillator substrate disposed opposite to the image sensing substrate and comprising:   a first substrate,   a plurality of guiding members disposed on the first substrate and protruded from the first substrate toward the image sensing substrate, wherein the guiding members are located corresponding to the image sensing pixels, respectively,   a reflective layer disposed on the guiding members, and   a scintillator layer disposed between the reflective layer and the image sensing substrate.   
     
     
         2 . The active matrix image sensing device of  claim 1 , wherein the image sensing pixel comprises a light sensing element and a TFT (thin-film-transistor) element, the light sensing element has a first terminal electrode and a second terminal electrode, the TFT element has a first electrode, a second electrode and a gate, the first electrode is electrically connected to a data line, the second electrode is electrically connected to the first terminal electrode of the light sensing element, the gate is electrically connected to a scan line, and the second terminal electrode is electrically connected to a conductive layer. 
     
     
         3 . The active matrix image sensing device of  claim 2 , wherein the first terminal electrode and the second terminal electrode are transparent electrodes. 
     
     
         4 . The active matrix image sensing device of  claim 2 , wherein the light sensing element further comprises a first semiconductor layer, an intrinsic semiconductor layer, and a second semiconductor layer, and the intrinsic semiconductor layer is disposed between the first semiconductor layer and the second semiconductor layer. 
     
     
         5 . The active matrix image sensing device of  claim 1 , wherein the guiding members form a plurality of openings, and the openings are disposed corresponding to the image sensing pixels, respectively. 
     
     
         6 . The active matrix image sensing device of  claim 1 , wherein the scintillator layer has a top surface facing the image sensing substrate, and a minimum distance between the top surface and the reflective layer is between 20 μm and 200 μm. 
     
     
         7 . The active matrix image sensing device of  claim 1 , wherein a maximum distance between the top surface and the reflective layer is between 100 μm and 300 μm. 
     
     
         8 . The active matrix image sensing device of  claim 1 , wherein the image sensing substrate further comprises a second substrate, the image sensing pixels are disposed on the second substrate, and the active matrix image sensing device further comprises a sealant for sealing peripheries of the first substrate and the second substrate. 
     
     
         9 . The active matrix image sensing device of  claim 1 , further comprising:
 an adhesive layer disposed between the image sensing substrate and the scintillator layer.   
     
     
         10 . An active matrix image sensing device, comprising:
 an image sensing substrate comprising a flexible substrate, wherein the image sensing substrate has a first surface and a second surface, which are opposite to each other;   a first scintillator layer disposed on the first surface of the image sensing substrate; and   a second scintillator layer disposed on the second surface of the image sensing substrate.   
     
     
         11 . The active matrix image sensing device of  claim 10 , wherein the image sensing substrate further has a plurality of image sensing pixels disposed on the flexible substrate. 
     
     
         12 . The active matrix image sensing device of  claim 11 , wherein the image sensing pixel comprises a light sensing element and a TFT (thin-film-transistor) element, the light sensing element has a first terminal electrode and a second terminal electrode, the TFT element has a first electrode, a second electrode and a gate, the first electrode is electrically connected to a data line, the second electrode is electrically connected to the first terminal electrode of the light sensing element, the gate is electrically connected to a scan line, and the second terminal electrode is electrically connected to a conductive layer. 
     
     
         13 . The active matrix image sensing device of  claim 12 , wherein the first terminal electrode and the second terminal electrode are transparent electrodes. 
     
     
         14 . The active matrix image sensing device of  claim 12 , wherein the light sensing element further comprises a first semiconductor layer, an intrinsic semiconductor layer, and a second semiconductor layer, and the intrinsic semiconductor layer is disposed between the first semiconductor layer and the second semiconductor layer. 
     
     
         15 . The active matrix image sensing device of  claim 10 , further comprising:
 a reflective layer disposed on the first scintillator layer away from the first surface.   
     
     
         16 . The active matrix image sensing device of  claim 10 , further comprising:
 a reflective layer disposed on the second scintillator layer away from the second surface.