US2018019296A1PendingUtilityA1

Passive Chip Device and Method of Making the Same

Assignee: WAFER MEMS CO LTDPriority: Jun 25, 2015Filed: Sep 26, 2017Published: Jan 18, 2018
Est. expiryJun 25, 2035(~8.9 yrs left)· nominal 20-yr term from priority
H10W 44/501H10W 20/042H01F 41/041H01F 41/04H01F 27/292H01F 17/0033H01L 21/76871H01F 2017/004H01F 17/02H01L 28/10H01L 23/645H01F 41/046H10D 1/20
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Claims

Abstract

A passive chip device includes a chip body, a conductive coil and a surface-mount contact unit. The chip body is in the form of a single piece, and has two opposite end faces and a first surface which is between the end faces. The conductive coil is deposited on and surrounding the chip body. The surface-mount contact unit includes two spaced apart conductive terminal contacts. Each of the terminal contacts extends from a respective one of the end faces to the first surface and connects to a respective one of end portions of the coil. The method of making the passive chip device is also disclosed.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A passive chip device comprising:
 a chip body which is in the form of a single piece, which extends in an axial direction, and which has two opposite end faces and a first surface, said end faces being opposite to each other in said axial direction, said first surface extending along said axial direction between said end faces;   a conductive coil deposited on and surrounding said chip body for generating inductance, said conductive coil having two opposite end portions; and   a surface-mount contact unit including two spaced apart conductive terminal contacts, each of which extends from a respective one of said end faces to said first surface, and each of which contacts a respective one of said end portions of said coil.   
     
     
         2 . The passive chip device of  claim 1 , wherein said conductive terminal contacts of said surface-mount contact unit are made from a material containing Ni and a metal selected from the group consisting of Au and Sn, said chip body being made from a magnetic material or a non-magnetic material, said magnetic material being magnetic metal or magnetic ceramic, said non-magnetic material being a Si-based material or non-magnetic metal. 
     
     
         3 . The passive chip device of  claim 2 , further comprising an insulator layer formed on said chip body, said chip body being made from said magnetic metal or said non-magnetic metal, said conductive coil being deposited on said insulator layer. 
     
     
         4 . The passive chip device of  claim 1 , wherein said chip body further has a second surface which is opposite to said first surface and which extends along said axial direction between said end faces, each of said terminal contacts further extending from the respective one of said end faces to said second surface. 
     
     
         5 . A passive chip device comprising:
 a chip body which is in the form of a single piece, which extends in an axial direction, and which has two opposite end faces and first and second surfaces, said end faces being opposite to each other in said axial direction, said first and second surfaces being opposite to each other and extending along said axial direction between said end faces;   a capacitor which is formed on said chip body and which has first and second conductive layers and a dielectric layer that is sandwiched between said first and second conductive layers and that is disposed adjacent to said second surface and distal from said first surface; and   a surface-mount contact unit formed on said chip body and including two spaced apart conductive terminal contacts, each of which has a first segment overlapping a respective one of said end faces along said axial direction and contacting a respective one of said first and second conductive layers, and a second segment extending from said first segment and formed on said first surface.   
     
     
         6 . The passive chip device of  claim 5 , wherein said conductive terminal contacts of said surface-mount contact are made from a material containing Ni and a metal selected from the group consisting of Au and Sn, said chip bodies being made from a magnetic material or a non-magnetic material, said magnetic material being magnetic metal or magnetic ceramic, said non-magnetic material being a Si-based material or non-magnetic metal. 
     
     
         7 . The passive chip device of  claim 6 , further comprising an insulator layer formed on said chip body, said chip body being made from said magnetic metal or said non-magnetic metal, said capacitor being formed on said insulator layer.

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