Multi-layer coating with diffusion barrier layer and erosion resistant layer

Abstract

A multi-layer coating for a surface of an article comprising a diffusion barrier layer and an erosion resistant layer. The diffusion barrier layer may be a nitride film including but not limited to TiN x , TaN x , Zr 3 N 4 , and TiZr x N y . The erosion resistant layer may be a rare oxide film including but not limited to YF 3 , Y 2 O 3 , Er 2 O 3 , Al 2 O 3 , ZrO 2 , ErAl x O y , YO x F y , YAl x O y , YZr x O y and YZr x Al y O z . The diffusion barrier layer and the erosion resistant layer may be deposited on the article's surface using a thin film deposition technique including but not limited to, ALD, PVD, and CVD.

1 . A multi-layer coating comprising:
 a diffusion barrier layer selected from a group consisting of TiN x , TaN x , Zr 3 N 4 , and TiZr x N y ; and   an erosion resistant layer selected from a group consisting of YF 3 , Y 2 O 3 , Er 2 O 3 , Al 2 O 3 , ZrO 2 , ErAl x O y , YO x F y , YAl x O y , YZr x O y  and YZr x Al y O z , wherein the erosion resistant layer covers the diffusion barrier layer.   
     
     
         2 . The multi-layer coating of  claim 1 , wherein the diffusion barrier layer has a thickness ranging from about 10 nm to about 100 nm, and wherein the erosion resistant layer has a thickness of up to about 1 micrometer. 
     
     
         3 . The multi-layer coating of  claim 1 , wherein the multi-layer coating is able to withstand temperature cycling from about 20° C. to about 450° C. without cracking. 
     
     
         4 . A method for forming a multi-layer coating, comprising:
 depositing a diffusion barrier layer onto a surface of an article, wherein the diffusion barrier layer is deposited using a first deposition process selected from a group consisting of atomic layer deposition (ALD), physical vapor deposition (PVD), and chemical vapor deposition (CVD), and wherein the diffusion barrier layer is selected from a group consisting of TiN x , TaN x , Zr 3 N 4 , and TiZr x N y ; and   depositing an erosion resistant layer onto the diffusion barrier layer, wherein the erosion resistant layer is deposited using a second deposition process selected from the group consisting of ALD, PVD, and CVD, and wherein the erosion resistant layer is selected from a group consisting of YF 3 , Y 2 O 3 , Er 2 O 3 , Al 2 O 3 , ZrO 2 , ErAl x O y , YO x F y , YAl x O y , YZr x O y  and YZr x Al y O z .   
     
     
         5 . The method of  claim 4 , wherein the first deposition process and the second deposition process are both ALD, both PVD, or both CVD. 
     
     
         6 . The method of  claim 4 , wherein the diffusion barrier layer is TiN x , and wherein the diffusion barrier layer is deposited via ALD or CVD from at least one Ti precursor selected from the group consisting of bis(diethylamido)bis(dimethylamido)titanium(IV), tetrakis(diethylamido)titanium(IV), tetrakis(dimethylamido)titanium(IV), tetrakis(ethylmethylamido)titanium(IV), titanium(IV) bromide, titanium(IV) chloride, and titanium(IV) tert-butoxide. 
     
     
         7 . The method of  claim 4 , wherein the diffusion barrier layer is TaN x , and wherein the diffusion barrier layer is deposited via ALD or CVD from at least one Ta precursor selected from the group consisting of pentakis(dimethylamido)tantalum(V), tantalum(V) chloride, tantalum(V) ethoxide, and tris(diethylamino)(tert-butylimido)tantalum(V). 
     
     
         8 . The method of  claim 4 , wherein the diffusion barrier layer is TiZr x N y ;
 wherein the diffusion barrier layer is deposited via ALD or CVD from at least one Ti precursor and from at least one Zr precursor;   wherein the at least one Ti precursor is selected from the group consisting of bis(diethylamido)bis(dimethylamido)titanium(IV), tetrakis(diethylamido)titanium(IV), tetrakis(dimethylamido)titanium(IV), tetrakis(ethylmethylamido)titanium(IV), titanium(IV) bromide, titanium(IV) chloride, and titanium(IV) tert-butoxide; and   wherein the at least one Zr precursor is selected from the group consisting of zirconium (IV) bromide, zirconium (IV) chloride, zirconium (IV) tert-butoxide, tetrakis(diethylamido)zirconium (IV), tetrakis(dimethylamido)zirconium (IV), and tetrakis(ethylmethylamido)zirconium (IV).   
     
     
         9 . The method of  claim 4 , wherein the erosion resistant layer is ErAl x O y ;
 wherein the erosion resistant layer is deposited via ALD or CVD from at least one Er precursor and from at least one Al 3  precursor;   wherein the at least one Er precursor is selected from the group consisting of tris-methylcyclopentadienyl erbium (III) (Er(MeCp) 3 ), erbium boranamide (Er(BA) 3 ), Er(TMHD) 3 , erbium(III) tris(2,2,6,6-tetramethyl-3,5-heptanedionate), and tris(butylcyclopentadienyl)erbium(III); and   wherein the at least one Al precursor is selected from the group consisting of diethylaluminum ethoxide, tris(ethylmethylamido)aluminum, aluminum sec-butoxide, aluminum tribromide, aluminum trichloride, triethylaluminum, triisobutylaluminum, trimethylaluminum, and tris(diethylamido)aluminum.   
     
     
         10 . The method of  claim 4 , wherein the erosion resistant layer is YAl x O y ,
 wherein the erosion resistant layer is deposited via ALD or CVD from at least one Y precursor and from at least one Al precursor;   wherein the at least one Y 3  precursor is selected from the group consisting of tris(N,N-bis(trimethylsilyl)amide)yttrium (III), yttrium (III)butoxide, tris(cyclopentadienyl)yttrium(III), and Y(thd)3 (thd=2,2,6,6-tetramethyl-3,5-heptanedionato); and   wherein the at least one Al 3  precursor is selected from the group consisting of diethylaluminum ethoxide, tris(ethylmethylamido)aluminum, aluminum sec-butoxide, aluminum tribromide, aluminum trichloride, triethylaluminum, triisobutylaluminum, trimethylaluminum, and tris(diethylamido)aluminum.   
     
     
         11 . The method of  claim 4 , wherein the erosion resistant layer is YO x F y ,
 wherein the erosion resistant layer is deposited via ALD or CVD from at least one Y precursor selected from the group consisting of tris(N,N-bis(trimethylsilyl)amide)yttrium (III), yttrium (III)butoxide, tris(cyclopentadienyl)yttrium(III), and Y(thd)3 (thd=2,2,6,6-tetramethyl-3,5-heptanedionato).   
     
     
         12 . The method of  claim 4 , wherein the erosion resistant layer is YZr x O y ,
 wherein the erosion resistant layer is deposited via ALD or CVD from at least one Y precursor and from at least one Zr precursor;   wherein the at least one Y precursor is selected from the group consisting of tris(N,N-bis(trimethylsilyl)amide)yttrium (III), yttrium (III)butoxide, tris(cyclopentadienyl)yttrium(III), and Y(thd)3 (thd=2,2,6,6-tetramethyl-3,5-heptanedionato); and   wherein the at least one Zr precursor is selected from the group consisting of zirconium (IV) bromide, zirconium (IV) chloride, zirconium (IV) tert-butoxide, tetrakis(diethylamido)zirconium (IV), tetrakis(dimethylamido)zirconium (IV), and tetrakis(ethylmethylamido)zirconium (IV).   
     
     
         13 . The method of  claim 4 , wherein the erosion resistant layer is YZr x Al y O z ,
 wherein the erosion resistant layer is deposited via ALD or CVD from at least one Y precursor, from at least one Zr precursor, and from at least one Al precursor;   wherein the at least one Y precursor is selected from the group consisting of tris(N,N-bis(trimethylsilyl)amide)yttrium (III), yttrium (III)butoxide, tris(cyclopentadienyl)yttrium(III), and Y(thd)3 (thd=2,2,6,6-tetramethyl-3,5-heptanedionato);   wherein the at least one Zr precursor is selected from the group consisting of zirconium (IV) bromide, zirconium (IV) chloride, zirconium (IV) tert-butoxide, tetrakis(diethylamido)zirconium (IV), tetrakis(dimethylamido)zirconium (IV), and tetrakis(ethylmethylamido)zirconium (IV); and   wherein the at least one Al precursor is selected from the group consisting of diethylaluminum ethoxide, tris(ethylmethylamido)aluminum, aluminum sec-butoxide, aluminum tribromide, aluminum trichloride, triethylaluminum, triisobutylaluminum, trimethylaluminum, and tris(diethylamido)aluminum.   
     
     
         14 . The method of  claim 4 , wherein the diffusion barrier layer has a thickness ranging from about 10 nm to about 100 nm, and wherein the erosion resistant layer has a thickness of up to about 1 micrometer. 
     
     
         15 . The method of  claim 4 , wherein the multi-layer coating is able to withstand temperature cycling from about 20° C. to about 450° C. without cracking. 
     
     
         16 . The method of  claim 4 , wherein depositing the diffusion barrier layer comprises depositing a plurality of intact layers using a plurality of precursors. 
     
     
         17 . The method of  claim 16 , further comprising annealing the plurality of intact layers to form an interdiffused diffusion barrier layer. 
     
     
         18 . The method of  claim 4 , wherein depositing the erosion resistant layer comprises depositing a plurality of intact layers using a plurality of precursors. 
     
     
         19 . The method of  claim 18 , further comprising annealing the plurality of intact layer to form an interdiffused erosion resistant layer. 
     
     
         20 . A coated process chamber component comprising:
 a process chamber component having a surface; and   a multi-layer coating comprising:
 a diffusion barrier layer selected from a group consisting of TiN x , TaN x , Zr 3 N 4 , and TiZr x N y ; and 
 an erosion resistant layer selected from a group consisting of YF 3 , Y 2 O 3 , Er 2 O 3 , Al 2 O 3 , ZrO 2 , ErAl x O y , YO x F y , YAl x O y , YZr x O y  and YZr x Al y O z , wherein the erosion resistant layer covers the diffusion barrier layer.