Light-emitting device and manufacturing method thereof

Abstract

A light-emitting device comprises a carrier; a first semiconductor element formed on the carrier and comprising a first semiconductor structure and a second semiconductor structure, wherein the second semiconductor structure is closer to the carrier than the first semiconductor structure is, the first semiconductor structure comprises a first active layer emitting a first light having a first dominant wavelength during a normal operation, and the second semiconductor structure comprises a second active layer; and a bridge on a side surface of the second active layer of the second semiconductor structure.

What is claimed is: 
     
         1 . A light-emitting device, comprising:
 a carrier;   a first semiconductor element formed on the carrier and comprising a first semiconductor structure and a second semiconductor structure, wherein the second semiconductor structure is closer to the carrier than the first semiconductor structure is, the first semiconductor structure comprises a first active layer emitting a first light having a first dominant wavelength during a normal operation, and the second semiconductor structure comprises a second active layer; and   a bridge on a side surface of the second active layer of the second semiconductor structure.   
     
     
         2 . The light-emitting device of  claim 1 , further comprising a tunnel junction between the first semiconductor structure and the second semiconductor structure, wherein the tunnel junction comprises a p-n junction. 
     
     
         3 . The light-emitting device of  claim 2 , wherein the tunnel junction comprises a first layer of a first conductivity-type and a second layer of a second conductivity-type, and the first conductivity-type is different from the second conductivity-type. 
     
     
         4 . The light-emitting device of  claim 3 , wherein the first semiconductor element comprises a semiconductor layer on the first active layer and having a doping concentration, and the first layer of the first conductivity-type and/or the second layer of the second conductivity-type has a doping concentration at least one order higher than the doping concentration of the semiconductor layer of the first semiconductor element. 
     
     
         5 . The light-emitting device of  claim 1 , wherein the carrier comprises a side face, the first semiconductor structure comprises a side face, and the side surface of the second active layer is between the side face of the first semiconductor structure and the side face of the carrier. 
     
     
         6 . The light-emitting device of  claim 1 , further comprising a second semiconductor element on the carrier, wherein the first semiconductor element is physically spaced apart from the second semiconductor element. 
     
     
         7 . The light-emitting device of  claim 6 , wherein the second semiconductor element comprises a third semiconductor structure emitting a second dominant wavelength during a normal operation. 
     
     
         8 . The light-emitting device of  claim 7 , wherein the first dominant wavelength is different from the second dominant wavelength. 
     
     
         9 . The light-emitting device of  claim 1 , wherein the second semiconductor structure comprises a top surface, and the light-emitting device further comprises a contact on the top surface of the second semiconductor structure. 
     
     
         10 . The light-emitting device of  claim 9 , wherein the bridge is in contact with the contact. 
     
     
         11 . The light-emitting device of  claim 9 , wherein the second semiconductor structure comprises a third semiconductor layer, a fourth semiconductor layer, and the second active layer is between the third semiconductor layer and the fourth semiconductor layer; and wherein the bridge extends from the contact, and covers a side surface of the third semiconductor layer and a side surface of the fourth semiconductor layer. 
     
     
         12 . The light-emitting device of  claim 1 , wherein the second semiconductor structure comprises a third semiconductor layer, a fourth semiconductor layer, and the second active layer is between the third semiconductor layer and the fourth semiconductor layer; and wherein the bridge covers a side surface of the third semiconductor layer and a side surface of the fourth semiconductor layer. 
     
     
         13 . The light-emitting device of  claim 1 , further comprising a first top electrode and a bottom electrode, wherein the first top electrode is on the first semiconductor structure, and the bottom electrode is on a side of the carrier opposite to the first semiconductor structure. 
     
     
         14 . The light-emitting device of  claim 13 , further comprising a second semiconductor element on the carrier, wherein the first semiconductor element is physically spaced apart from the second semiconductor element, and the second semiconductor element comprises a third semiconductor structure. 
     
     
         15 . The light-emitting device of  claim 14 , further comprising a second top electrode on the third semiconductor structure. 
     
     
         16 . The light-emitting device of  claim 15 , wherein the bottom electrode is vertically overlapped with the first top electrode, the second top electrode and the bridge. 
     
     
         17 . The light-emitting device of  claim 15 , wherein the second top electrode is closer to the carrier than the first top electrode is. 
     
     
         18 . The light-emitting device of  claim 1 , further comprising an etching stop layer formed between the first semiconductor structure and the second semiconductor structure. 
     
     
         19 . The light-emitting device of  claim 1 , wherein the second active layer does not emit light during the normal operation. 
     
     
         20 . The light-emitting device of  claim 1 , further comprising an adhesive layer between the second semiconductor structure and the carrier.