Light wave separation lattices and methods of forming light wave separation lattices

Abstract

Light wave separation lattices and methods of formation are provided herein. In some embodiments, a light wave separation lattice includes a first layer having the formula RO x N y , wherein the first layer has a first refractive index; and a second layer, different from the first layer, disposed atop the first layer, and having the formula R′O x N y , wherein the second layer has a second refractive index different from the first refractive index, and wherein R and R′ are each one of a metal or a dielectric material. In some embodiments, a method of forming a light wave separation lattice includes depositing a first layer having a predetermined desired refractive index atop a substrate by a physical vapor deposition process; and depositing a second layer, different from the first layer, atop the first layer, wherein the second layer has a predetermined second refractive index different from the first refractive index.

1 . A light wave separation lattice, comprising:
 a first layer having a formula RO x N y , wherein the first layer has a first refractive index; and   a second layer, different from the first layer, disposed atop the first layer, and having a formula R′O x N y , wherein the second layer has a second refractive index different from the first refractive index, wherein R and R′ are each one of a metal or a dielectric material.   
     
     
         2 . The light wave separation lattice of  claim 1 , wherein x and y can each vary in concentration from 0% to 100%. 
     
     
         3 . The light wave separation lattice of  claim 1 , wherein R and R′ are each one of silicon (Si), titanium (Ti), aluminum (Al), hafnium (Hf), niobium (Nb), tantalum (Ta), tungsten (W), zirconium (Zr), or copper (Cu). 
     
     
         4 . The light wave separation lattice of  claim 1 , further comprising a plurality of alternating first and second layers. 
     
     
         5 . The light wave separation lattice of  claim 4 , wherein the first layer and second layer each have a thickness of about 10 nm to about 120 nm. 
     
     
         6 . The light wave separation lattice of  claim 1 , wherein the first layer and the second layer further comprise at least one of carbon or hydrogen. 
     
     
         7 . A method of forming a light wave separation lattice atop a substrate disposed in a physical vapor deposition (PVD) chamber, comprising:
 (a) depositing a first layer having a formula RO x N y , atop a substrate by a physical vapor deposition process, wherein the first layer has a predetermined first refractive index; and   (b) depositing a second layer, different from the first layer and having a formula R′O x N y , atop the first layer by a physical vapor deposition process, wherein the second layer has a predetermined second refractive index different from the first refractive index, and wherein R and R′ are each one of a metal or a dielectric material.   
     
     
         8 . The method of  claim 7 , wherein the first layer and the second layer are deposited in a single physical vapor deposition process chamber. 
     
     
         9 . The method of  claim 7 , wherein the first layer is deposited in a first physical vapor deposition process chamber and the second layer is deposited in a second physical vapor deposition process chamber and wherein the first physical vapor deposition process chamber and the second physical vapor deposition process chamber are coupled to a cluster tool. 
     
     
         10 . The method of  claim 9 , wherein the first physical vapor deposition process chamber and second physical vapor deposition process chamber each comprise a target composed of one of silicon (Si), titanium (Ti), aluminum (Al), hafnium (Hf), niobium (Nb), tantalum (Ta), tungsten (W), zirconium (Zr), or copper (Cu). 
     
     
         11 . The method of  claim 7 , wherein at least one of depositing the first layer or the second layer further comprises flowing a process gas into the chamber. 
     
     
         12 . The method of  claim 11 , wherein the process gas comprises one or more of an oxygen-containing gas, a nitrogen-containing gas, a carbon-containing gas, or a hydrogen-containing gas. 
     
     
         13 . The method of  claim 7 , further comprising
 repeating steps (a)-(b) to form a stack having a plurality of alternating first and second layers;   etching one of the first layer or the second layer to a varying thickness across the stack, wherein each thickness filters a different wavelength of light; and   repeating steps (a)-(b).   
     
     
         14 . The method of  claim 7 , wherein each of the first layer and second layer has a thickness of about 10 nm to about 120 nm. 
     
     
         15 . The method of  claim 11 , further comprising:
 generating a plasma over a surface of the substrate to ionize the process gas; and   biasing an electrode coupled to a portion of the chamber to cause the ionized process gas to bombard the surface of the substrate.   
     
     
         16 . The method of  claim 15 , wherein biasing the electrode is used to control at least one of smoothness or hydrophobicity of the surface of the substrate. 
     
     
         17 . A method of forming a color filter, comprising:
 (a) depositing a first layer having a predetermined first refractive index atop a substrate by a physical vapor deposition process, wherein the first layer has the formula RO x N y ,   (b) depositing a second layer having the formula R′O x N y  atop the first layer, wherein the second layer has a predetermined second refractive index different from the first refractive index;   (c) repeating steps (a)-(b) to form a stack having a plurality of alternating first and second layers;   (d) etching one of the first layer or the second layer to a varying thickness across the stack, wherein each thickness filters a different wavelength of light; and   (e) repeating steps (a)-(b).   
     
     
         18 . The method of  claim 17 , wherein R and R′ are each one of silicon (Si), titanium (Ti), aluminum (Al), hafnium (Hf), niobium (Nb), tantalum (Ta), tungsten (W), zirconium (Zr), or copper (Cu). 
     
     
         19 . The method of  claim 17 , wherein at least one of the first layer or the second layer further comprise at least one of carbon or hydrogen. 
     
     
         20 . The method of  claim 17 , wherein the first layer and second layer each have a thickness of about 10 nm to about 120 nm.