Plasma-enhanced chemical vapor deposition apparatus and method of forming lithium-based film by using the same

Abstract

A plasma-enhanced chemical vapor deposition apparatus for depositing a lithium (Li)-based film on a surface of a substrate includes a reaction chamber, in which the substrate is disposed; a first source supply configured to supply a Li source material into the reaction chamber; a second source supply configured to supply phosphor (P) and oxygen (O) source materials and a nitrogen (N) source material into the reaction chamber; a power supply configured to supply power into the reaction chamber to generate plasma in the reaction chamber; and a controller configured to control the power supply to turn on or off generation of the plasma.

What is claimed is: 
     
         1 . A plasma-enhanced chemical vapor deposition apparatus for depositing a lithium (Li)-based film on a surface of a substrate, the apparatus comprising:
 a reaction chamber in which the substrate is disposed;   a first source supply configured to supply a Li source material into the reaction chamber;   a second source supply configured to supply phosphor (P) and oxygen (O) source materials and a nitrogen (N) source material into the reaction chamber;   a power supply configured to supply power into the reaction chamber to generate plasma in the reaction chamber; and   a controller configured to control the power supply to turn on or off generation of the plasma.   
     
     
         2 . The plasma-enhanced chemical vapor deposition apparatus of  claim 1 , wherein the second source supply is further configured to supply the P and O source materials and the N source material into the reaction chamber with a time interval from a time when the Li source material is supplied into the reaction chamber. 
     
     
         3 . The plasma-enhanced chemical vapor deposition apparatus of  claim 2 , wherein the Li source material supplied into the reaction chamber by the first source supply is adsorbed on the surface of the substrate, and the P and O source materials supplied into the reaction chamber by the second source supply is adsorbed on the Li source material. 
     
     
         4 . The plasma-enhanced chemical vapor deposition apparatus of  claim 3 , wherein, when the second source supply supplies the P and O source materials and the N source material into the reaction chamber, the controller is further configured to control the power supply to form a bonding between the P source material and the N source material (P—N bonding) using the plasma. 
     
     
         5 . The plasma-enhanced chemical vapor deposition apparatus of  claim 4 , wherein the controller is further configured to control an on-off time of the generation of the plasma to adjust an amount of the N source material supplied into the reaction chamber. 
     
     
         6 . The plasma-enhanced chemical vapor deposition apparatus of  claim 1 , wherein the Li source material comprises at least one of lithium hexamethyldisilazide (Li-HMDS), Li(CH 2 SiMe 3 ), LiOtBu, Li(acac), and Li(thd). 
     
     
         7 . The plasma-enhanced chemical vapor deposition apparatus of  claim 1 , wherein the P and O source materials comprise at least one of trimethyl phosphate (TMPO), triethyl phosphate (TEPO), and diethyl phosphoramidate (DEPA). 
     
     
         8 . The plasma-enhanced chemical vapor deposition apparatus of  claim 1 , wherein the N source material comprises at least one of a N 2  reactive gas and a NH 3  reactive gas that move the P and O source materials into the reaction chamber. 
     
     
         9 . A method of forming a lithium (Li)-based film, the method comprising:
 supplying a Li source material into a reaction chamber in which a substrate is disposed;   supplying phosphor (P) and oxygen (O) source materials and a nitrogen (N) source material into the reaction chamber; and   generating plasma in the reaction chamber to form a Li-based film on the substrate from the Li, P, O, and N source materials.   
     
     
         10 . The method of  claim 9 , wherein the supplying of the Li source material into the reaction chamber and the supplying of the P and O source materials and the N source material into the reaction chamber are performed with a time interval. 
     
     
         11 . The method of  claim 10 , further comprising purging an interior of the reaction chamber between the supplying of the Li source material into the reaction chamber and the supplying of the P and O source materials and the N source material into the reaction chamber. 
     
     
         12 . The method of  claim 11 , wherein the Li source material supplied into the reaction chamber is deposited on the substrate, and the P and O source materials supplied into the reaction chamber are adsorbed on the Li source material. 
     
     
         13 . The method of  claim 12 , wherein a bonding between the P source material and the N source material (P—N bonding) is formed by generating the plasma in the reaction chamber when the P and O source materials and the N source material are supplied into the reaction chamber. 
     
     
         14 . The method of  claim 13 , wherein an amount of the N source material supplied into the reaction chamber is adjusted by controlling an on-off time of generation of the plasma. 
     
     
         15 . The method of  claim 9 , further comprising purging an interior of the reaction chamber after the Li-based film is formed on the substrate. 
     
     
         16 . The method of  claim 9 , wherein a reaction temperature of the substrate in a process of forming the Li-based film is about 100° C. to about 450° C. 
     
     
         17 . The method of  claim 9 , wherein the substrate comprises at least one three-dimensional (3D) structure having an aspect ratio of at least 1:1. 
     
     
         18 . The method of  claim 17 , wherein the 3D structure comprises a cathode having a 3D structure, and the Li-based film comprises a solid electrolyte film deposited on a surface of the cathode. 
     
     
         19 . The method of  claim 17 , wherein the 3D structure comprises an anode having a 3D structure, and the Li-based film comprises a solid electrolyte film or a protective film deposited on a surface of the anode. 
     
     
         20 . The method of  claim 17 , wherein the 3D structure comprises a conductive carbon electrode having a 3D structure, and the Li-based film comprises a solid electrolyte film or a protective film deposited on a surface of the conductive carbon electrode. 
     
     
         21 . A plasma-enhanced chemical vapor deposition apparatus, the apparatus comprising:
 a substrate disposed in a reaction chamber;   a first source supply configured to supply a Li source material into the reaction chamber at a first time to deposit the Li source material on the substrate;   a second source supply configured to supply phosphor (P) and oxygen (O) source materials and a nitrogen (N) source material into the reaction chamber at a second time subsequent to the first time to be absorbed by the Li source material deposited on the substrate; and   a power supply configured to supply power into the reaction chamber to generate plasma that causes the P source material to react with the N source material at the second time.   
     
     
         22 . The apparatus of  claim 21 , further comprising a purging gas supply configured to supply a purging gas into the reaction chamber to remove the Li source material remaining in the chamber after the Li source material is deposited on the substrate at the first time before the P, O, and N source materials are supplied into the reaction chamber at the second time, 
     
     
         23 . The apparatus of  claim 21 , the power supply is further configured to control an on-off time of generation of the plasma at the second time.