Resin composition, resin sheet, and cured resin material and method for producing the same

Abstract

A resin composition constituted by containing an epoxy resin monomer having a mesogenic structure, a novolac resin containing a compound having a structural unit represented by the following general formula (I), and an inorganic filler is superior in preservation stability before curing, and can attain high thermal conductivity after curing. In the following general formula (I), R 1 , R 2 and R 3 independently represent a hydrogen atom, an alkyl group, an aryl group, or an aralkyl group; m represents an integer of 0 to 2; and n an integer of 1 to 7.

1 - 12 . (canceled) 
     
     
         13 . A power semiconductor device, comprising:
 a cooling unit;   a radiating base arranged on the cooling unit;   a resin sheet arranged on the radiating base;   a copper plate arranged on the resin sheet; and   a power semiconductor chip arranged on the copper plate via a solder layer,   wherein the resin sheet comprises a cured product of a resin composition, the resin composition comprising:   an epoxy resin monomer having a mesogenic group;   a novolac resin containing a compound having a resorcinol structural unit represented by the following Formula (I); and   an inorganic filler,   
       
         
           
           
               
               
           
         
         wherein R 1  represents a hydrogen atom, an alkyl group, an aryl group, or an aralkyl group; each of R 2  and R 3  independently represents a hydrogen atom, an alkyl group, an aryl group, or an aralkyl group; m represents an integer from 0 to 2; and n represents an integer from 1 to 7. 
       
     
     
         14 . The power semiconductor device according to  claim 13 , wherein a monomer content of the novolac resin is from 5% by mass to 80% by mass. 
     
     
         15 . The power semiconductor device according to  claim 13 , wherein the epoxy resin monomer is represented by the following Formula (II): 
       
         
           
           
               
               
           
         
         wherein Ep represents a group including an epoxy group; ME represents a mesogenic group; L represents a bivalent linking group; and k represents 0 or 1. 
       
     
     
         16 . The power semiconductor device according to  claim 15 , wherein the ME represents a mesogenic group selected from the group consisting of M-1 to M-18: 
       
         
           
           
               
               
           
         
         
           
           
               
               
           
         
       
     
     
         17 . The power semiconductor device according to  claim 13 , wherein the novolac resin further comprises a phenolic structural unit derived from a phenolic compound, other than the resorcinol structural unit. 
     
     
         18 . The power semiconductor device according to  claim 13 , wherein the resin composition further comprises a coupling agent. 
     
     
         19 . A power semiconductor device, comprising:
 a first cooling unit;   a first resin sheet arranged on the first cooling unit;   a first copper plate arranged on the first resin sheet;   a power semiconductor chip arranged on the first copper plate via a first solder layer;   a second copper plate arranged on the power semiconductor chip via a second solder layer;   a third copper plate arranged on the second copper plate via a third solder layer;   a second resin sheet arranged on the third copper plate; and   a second cooling unit arranged on the second resin sheet,   wherein each of the first resin sheet and the second resin sheet comprises a cured product of a resin composition, the resin composition comprising:   an epoxy resin monomer having a mesogenic group;   a novolac resin containing a compound having a resorcinol structural unit represented by the following Formula (I); and   an inorganic filler,   
       
         
           
           
               
               
           
         
         wherein R 1  represents a hydrogen atom, an alkyl group, an aryl group, or an aralkyl group; each of R 2  and R 3  independently represents a hydrogen atom, an alkyl group, an aryl group, or an aralkyl group; m represents an integer from 0 to 2; and n represents an integer from 1 to 7. 
       
     
     
         20 . The power semiconductor device according to  claim 19 , wherein a monomer content of the novolac resin is from 5% by mass to 80% by mass. 
     
     
         21 . The power semiconductor device according to  claim 19 , wherein the epoxy resin monomer is represented by the following Formula (II): 
       
         
           
           
               
               
           
         
         wherein Ep represents a group including an epoxy group; ME represents a mesogenic group; L represents a bivalent linking group; and k represents 0 or 1. 
       
     
     
         22 . The power semiconductor device according to  claim 21 , wherein the ME represents a mesogenic group selected from the group consisting of M-1 to M-18: 
       
         
           
           
               
               
           
         
         
           
           
               
               
           
         
       
     
     
         23 . The power semiconductor device according to  claim 19 , wherein the novolac resin further comprises a phenolic structural unit derived from a phenolic compound, other than the resorcinol structural unit. 
     
     
         24 . The power semiconductor device according to  claim 19 , wherein the resin composition further comprises a coupling agent. 
     
     
         25 . A power semiconductor device, comprising:
 a first cooling unit;   a first resin sheet arranged on the first cooling unit;   a first copper plate arranged on the first resin sheet;   a power semiconductor chip arranged on the first copper plate via a first solder layer;   a second copper plate arranged on the power semiconductor chip via a second solder layer;   a second resin sheet arranged on the second copper plate; and   a second cooling unit arranged on the second resin sheet,   wherein each of the first resin sheet and the second resin sheet comprises a cured product of a resin composition, the resin composition comprising:   an epoxy resin monomer having a mesogenic group;   a novolac resin containing a compound having a resorcinol structural unit represented by the following Formula (I); and   an inorganic filler,   
       
         
           
           
               
               
           
         
         wherein R 1  represents a hydrogen atom, an alkyl group, an aryl group, or an aralkyl group; each of R 2  and R 3  independently represents a hydrogen atom, an alkyl group, an aryl group, or an aralkyl group; m represents an integer from 0 to 2; and n represents an integer from 1 to 7. 
       
     
     
         26 . The power semiconductor device according to  claim 25 , wherein a monomer content of the novolac resin is from 5% by mass to 80% by mass. 
     
     
         27 . The power semiconductor device according to  claim 25 , wherein the epoxy resin monomer is represented by the following Formula (II): 
       
         
           
           
               
               
           
         
         wherein Ep represents a group including an epoxy group; ME represents a mesogenic group; L represents a bivalent linking group; and k represents 0 or 1. 
       
     
     
         28 . The power semiconductor device according to  claim 27 , wherein the ME represents a mesogenic group selected from the group consisting of M-1 to M-18: 
       
         
           
           
               
               
           
         
         
           
           
               
               
           
         
       
     
     
         29 . The power semiconductor device according to  claim 25 , wherein the novolac resin further comprises a phenolic structural unit derived from a phenolic compound, other than the resorcinol structural unit. 
     
     
         30 . The power semiconductor device according to  claim 25 , wherein the resin composition further comprises a coupling agent.