Optoelectronic semiconductor device with barrier layer

Abstract

An optoelectronic semiconductor device comprises a barrier layer, a first semiconductor layer on the barrier layer, the first semiconductor layer comprising a first dopant and a second dopant, and a second semiconductor layer beneath the barrier layer, the second semiconductor comprising the second dopant, wherein, in the first semiconductor layer, a concentration of the first dopant is larger than a concentration of the second dopant, and the concentration of the second dopant in the second semiconductor layer is larger than that in the first semiconductor layer.

What is claimed is: 
     
         1 . An optoelectronic semiconductor device, comprising:
 a first semiconductor layer, comprising a first dopant and a second dopant;   a second semiconductor layer, comprising a third dopant; and   a barrier layer between the first semiconductor layer and the second semiconductor layer;   wherein, the material of the second dopant is the same as that of the third dopant, and in the first semiconductor layer, a concentration of the first dopant is larger than a concentration of the second dopant, and wherein the barrier layer comprises a group III element, and a percentage of the group III element decreases in the barrier layer from the portion near the second semiconductor layer to the portion near the first semiconductor layer.   
     
     
         2 . The optoelectronic semiconductor device according to  claim 1 , further comprising a first semiconductor stack comprising a first light-emitting layer and on one side of the first semiconductor layer opposite to the barrier layer;
 a second semiconductor stack comprising a second light-emitting layer and on one side of the barrier layer opposite to the first semiconductor layer, wherein the second semiconductor stack comprises the second semiconductor layer between the second light-emitting layer and the barrier layer; and   a tunnel layer between the first semiconductor stack and the barrier layer, wherein the tunnel layer comprises the first semiconductor layer.   
     
     
         3 . The optoelectronic semiconductor device according to  claim 1 , wherein the concentration of the first dopant is larger than 10 19  cm −3 . 
     
     
         4 . The optoelectronic semiconductor device according to  claim 3 , wherein the first dopant comprises C. 
     
     
         5 . The optoelectronic semiconductor device according to  claim 1 , wherein the concentration of the second dopant is smaller than 10 18  cm −3 . 
     
     
         6 . The optoelectronic semiconductor device according to  claim 5 , wherein the second dopant comprises Mg or Zn. 
     
     
         7 . The optoelectronic semiconductor device according to  claim 1 , wherein the concentration of the third dopant in the second semiconductor layer is larger than that of the second dopant in the first semiconductor layer. 
     
     
         8 . The optoelectronic semiconductor device according to  claim 1 , wherein the barrier layer comprises Sb having a concentration between 10 17 ˜10 18  cm −3 . 
     
     
         9 . The optoelectronic semiconductor device according to  claim 2 , wherein the first semiconductor stack further comprises a first p-type semiconductor layer on one side of the first light-emitting layer and a first n-type semiconductor layer on the other side of the first light-emitting layer opposite to the first p-type semiconductor layer; the second semiconductor stack further comprises a second n-type semiconductor layer on one side of the second light-emitting layer opposite to the second semiconductor layer, wherein the second semiconductor layer is a p-type semiconductor; the tunnel layer further comprises a third semiconductor layer between the first semiconductor layer and the first light-emitting layer. 
     
     
         10 . The optoelectronic semiconductor device according to  claim 9 , wherein the third semiconductor layer comprises a fourth dopant which is different from the second dopant. 
     
     
         11 . The optoelectronic semiconductor device according to  claim 10 , wherein the fourth dopant comprises Te having a concentration larger than 10 19  cm −3 . 
     
     
         12 . The optoelectronic semiconductor device according to  claim 2 , further comprising a substrate on the first semiconductor layer or on the second semiconductor layer. 
     
     
         13 . The optoelectronic semiconductor device according to  claim 2 , wherein a light emitted from the first light-emitting layer has a first wavelength, a light emitted from the second light-emitting layer has a second wavelength, and the difference in wavelength between the first wavelength and the second wavelength is smaller than 20 nm. 
     
     
         14 . The optoelectronic semiconductor device according to  claim 1 , wherein the concentration of the first dopant is 10 times larger than the concentration of the second dopant. 
     
     
         15 . The optoelectronic semiconductor device according to  claim 1 , wherein the percentage of the group III element in the barrier layer is between 0.2 and 0.7. 
     
     
         16 . The optoelectronic semiconductor device according to  claim 15 , wherein the group III element comprises Al. 
     
     
         17 . The optoelectronic semiconductor device according to  claim 15 , wherein the percentage of the group III element decreases in the barrier layer in stepped type or linearly. 
     
     
         18 . The optoelectronic semiconductor device according to  claim 1 , wherein the first dopant and the second dopant have the same electrical conductivity. 
     
     
         19 . The optoelectronic semiconductor device according to  claim 1 , wherein the barrier layer has bandgap which decrease from the portion near the second semiconductor layer to the portion near the first semiconductor layer. 
     
     
         20 . The optoelectronic semiconductor device according to  claim 19 , wherein the bandgap of the portion of the barrier layer near the second semiconductor layer is between 2.3 eV˜2.5 eV, and the bandgap of the portion of the barrier layer near the first semiconductor layer is between 1.9 eV˜2.1 eV.