Plasma processing apparatus and plasma processing method

Abstract

A plasma processing method of processing layer structure previously formed on an upper surface of a wafer disposed in a processing chamber within a vacuum container and having a layer to be processed and an undercoating layer disposed under the layer by plasma in the processing chamber, includes a step of calculating an etching amount of the layer to be processed at time during processing of any wafer by using result of comparing real pattern data with detection pattern data obtained by combining two patterns of intensity having as parameter wavelength of interference light obtained by processing the layer structure containing three or more undercoating layers having different thickness and the layer to be processed in advance of the processing of the any wafer and a real pattern of intensity having as parameter the wavelength of the interference light obtained during processing of the layer structure on the any wafer.

1 - 12 . (canceled) 
     
     
         13 . A plasma processing method of processing a layer structure previously formed on an upper surface of a wafer disposed in a processing chamber within a vacuum container by means of plasma generated in the processing chamber, the layer structure including a layer to be processed and a mask layer disposed above the layer to be processed, the method comprising:
 a step of calculating an etching amount or an etching depth of the layer to be processed at a time during processing of the wafer, by using a result of comparing real pattern data which indicates a pattern of intensity of interference lights having as a parameter a wavelength thereof obtained at the time during the processing of the wafer, with detection pattern data obtained in advance by combining two patterns of data selected from three or more patterns of data, each of which indicates the intensity of the interference light detected from each of the plurality of layer structures, each of the plurality of layer structures containing the mask layer having a thickness which is different for each of the plurality of layer structures; and   a step of judging arrival at a target of the processing of the layer to be processed using the etching amount.   
     
     
         14 . A plasma processing method according to  claim 13 ,
 wherein in the step of calculating the etching amount or etching depth at the time by using the result of comparing the real pattern data with the detection pattern data combining two patterns of the intensities of the interference lights, the two patterns are selected in ascending order of differences between the real pattern data.   
     
     
         15 . A plasma processing method according to  claim 13 ,
 wherein in the step of calculating the etching amount of the layer or etching depth to be processed at the time during the processing of the wafer by using result of comparing the real pattern data with the detection pattern data, the real pattern data, or the three or more patterns of data from the two of which, the detection pattern of data indicates time series data of differential values of intensities of the interference lights having as a parameter the wavelength thereof from the layer structure during the processing of the wafer.   
     
     
         16 . A plasma processing method according to  claim 14 ,
 wherein in the step of calculating the etching amount or etching depth of the layer to be processed at the time during the processing of the wafer by using result of comparing the real pattern data with the detection pattern data, the real pattern data, or the three or more patterns of data from the two of which, the detection pattern of data indicates a time series data of differential values of intensities of the interference lights having as a parameter the wavelength thereof from the layer structure during the processing of the wafer.   
     
     
         17 . The plasma processing method according to  claim 13 , further comprising:
 a step of using the calculated etching amount or etching depth at the time during processing of the wafer, and a previously stored amount at a time before said time during the processing of the wafer, to calculate the etching amount or etching depth and to judge arrival at a target of the processing using the detected etching amount.   
     
     
         18 . The plasma processing method according to  claim 14 , further comprising:
 a step of using the calculated etching amount or etching depth at the time during processing of the wafer, and a previously stored amount at a time before said time during the processing of the wafer, to calculate the etching amount or etching depth and to judge arrival at a target of the processing using the detected etching amount.