Light-emitting device and light-emitting apparatus comprising the same

Abstract

The present application discloses a light-emitting device comprising a light-emitting unit and a flexible carrier supporting the light-emitting unit. The light-emitting unit comprises a LED chip, a first reflective layer on the LED chip and an optical diffusion layer formed between the first reflective layer and the LED chip.

1 . A light-emitting device, comprising:
 a first light-emitting unit, comprising,   an LED chip having a first top surface, a bottom surface, and a side surface arranged between the first top surface and the bottom surface;   a first reflective layer arranged on the LED chip and having a second top surface substantially parallel with the first top surface from a first edge to a second edge of the second top surface; and   an optical diffusion layer formed between the first reflective layer and the first LED chip; and   a flexible carrier facing the bottom surface and supporting the first light-emitting unit.   
     
     
         2 . The light-emitting device of  claim 1 , wherein the flexible carrier comprises hyper-polyvinylidene fluoride. 
     
     
         3 . The light-emitting device of  claim 1 , wherein the light-emitting device has an illumination uniformity larger than 80%, and the illumination uniformity is measured at a measuring point with an offset angle between 30° and 90°, the offset angle is measured with respect to a virtual line normal to a top surface of the light-emitting device, is larger than 80%. 
     
     
         4 . The light-emitting device of  claim 1 , wherein the first light-emitting unit has an light intensity increasing at a range of the offset angle between 0° and 30° and decreasing at a rage of the offset angle between 40° and 70° further comprises a wavelength conversion layer between the LED chip and the optical diffusion layer. 
     
     
         5 . The light-emitting device of  claim 1 , wherein the flexible carrier has a transparency larger than 90% and a glass transition temperature larger than 160° C. 
     
     
         6 . The light-emitting device of  claim 1 , wherein the flexible carrier has a radius of curvature not larger than 25 cm. 
     
     
         7 . The light-emitting device of  claim 1 , wherein the light-emitting device has a thickness less than 7 mm. 
     
     
         8 . The light emitting device of  claim 1 , further comprising a second reflective layer formed between the flexible carrier and the light emitting unit. 
     
     
         9 . The light-emitting device of  claim 1 , further comprising a second light-emitting unit having a second LED chip, a second reflective layer arranged on the second LED chip, and an insulating layer, wherein the second reflective layer and the insulating layer are formed on opposite sides of the second LED chip. 
     
     
         10 . The light-emitting device of  claim 9 , wherein the insulating layer further comprises a curved surface below the second LED chip. 
     
     
         11 . The light-emitting device of  claim 9 , further comprising a bonding pad arranged on the insulating layer and electrically connected to the second LED chip. 
     
     
         12 - 20 . (canceled).