Method of manufacturing semiconductor device and sputtering apparatus

Abstract

Reliability of a semiconductor device is improved, and use efficiency of a sputtering apparatus is increased. When depositing thin films over a main surface of a semiconductor wafer using a magnetron sputtering apparatus in which a collimator is installed in a space between the semiconductor wafer and a target installed in a chamber, a region inner than a peripheral part of the collimator is made thinner than the peripheral part. Thus, it becomes possible to suppress deterioration in uniformity of the thin film in a wafer plane, which may occur as the integrated usage of the target increases.

What is claimed is: 
     
         1 . A method of manufacturing a semiconductor device comprising a step of:
 depositing thin films containing components for configuring a target over a main surface of a semiconductor wafer with use of a sputtering apparatus which includes: a chamber; a wafer stage installed in the chamber and supporting the semiconductor wafer; the target so installed as to oppose the semiconductor wafer supported by the wafer stage; and a collimator installed in a space between the semiconductor wafer supported by the wafer stage and the target and having a plurality of through holes provided along its thickness direction,   wherein a region inner than a peripheral part of the collimator is thinner than the peripheral part.