Gauusian surface lens quantum photon converter and methods of controlling led colour and intensity

Abstract

This invention is a photon-interactive Gaussian surface lens method means that converts incident photons from a single or a plurality of wide band gap semiconductor class light emitting diode dies, into a secondary emission of photons emanating from a composite photon transparent colloidal stationary suspension of quantum dots, high efficiency phosphors, a combination of quantum dots and high efficiency phosphors and nano-particles of metal, silicon or similar semiconductors from the IIIB and IVB Group of the Periodic Table and any nano-material and/or micro/nano spheres that responds to Rayleigh Scattering and/or Mie Scattering; and a plurality of quantum dots in communication with said nano-particles in said suspension. The apparatus and methods according to the present invention provides in improved narrow pass-band of red, green, and blue photon efficiency over phosphor based conversion. Utilizing the invention's methodology, the white resultant colour temperature is stabilized against internal semiconductor thermal fluctuations or ambient thermal variations.

What is claimed is: 
     
         1 . A treble quantum dot strip array, comprising:
 a red photon transparent stationary colloidal epoxy suspension volume strip segment including a plurality of red photon emitting quantum dots responsive to an electrical signal applied thereon to provide a photon emission in the red wavelength;   a blue photon transparent stationary colloidal epoxy suspension volume segment including a plurality of blue photon emitting quantum dots responsive to an electrical signal applied thereon to provide a photon emission in the blue wavelength;   a green photon transparent stationary colloidal epoxy suspension volume segment including a plurality of green photon emitting quantum dots responsive to an electrical signal applied thereon to provide a photon emission in the green wavelength;   a uV attenuating filter,
 wherein each of said red, blue and green segments are disposed to form a parallel treble array of segments are disposed to provide a photon path from a photon source through said uV filter and said red segment, a photon path from said photon source through said uV filter and said green segment, and a photon path from said photon source through said uV filter said blue segments, 
 said red, green and blue segments are physically separate and electrically isolated from each other, 
 and have each a physically separate and electrically isolated conductive electrical signal connection thereto. 
   
     
     
         2 . The treble quantum dot strip array as recited in  claim 1 , wherein each of said treble strip segments comprises of an epoxy; that has an inherent characteristics of passing without attenuation throughout its volume, ultraviolet light of a spectrum associated with desired Stokes absorption to emission shift values inherent of said quantum dots, wherein
 said red strip comprises a plurality of red colour quantum dots as defined by their size diameter of a range of approximately 610 to 630 nanometres with a particle size of substantially 5.2 nm,   said green strip comprises a plurality of green colour quantum dots as defined by their size diameter of a range of approximately 520 to 540 nanometres with a particle size of substantially 3.3 nm, and wherein   said blue strip comprises a plurality of blue colour quantum dots as defined by their size diameter of a range of approximately 470 to 490 nanometres with a particle size of substantially 2.5 nm.   
     
     
         3 . The treble quantum dot strip array as recited in  claim 1 , wherein each said treble quantum dot strip further including layer of ultraviolet filter thin film disposed to reduce the introduction of external, non photon source ultra violet photons into said red, green and blue. 
     
     
         4 . The treble quantum dot strip array as recited in  claim 1 , wherein said treble quantum dot array includes a light emitting diode source of photons and is applied over said light emitting diode source of photons. 
     
     
         5 . The treble quantum dot strip array as recited in  claim 4 , wherein light emitting diode source of photons includes at least one of a plurality of red and green quantum dots, silicon nanoparticles, and micro glass or polymer spheres. 
     
     
         6 . A treble quantum dot strip array as recited in  claim 1 , wherein each strip segment is disposed on and in communication with a thin film of a transparent ultraviolet filter that is disposed proximal to and in communication with a broadband photon source disposed to pass photons through said thin film ultraviolet filter and each of said red, green and blue segments and to block ultraviolet light from said broadband photon source. 
     
     
         7 . A COB (chip on board) LED (light emitting Diode) array apparatus comprising:
 a first plurality of LED dies disposed on a common substrate and being wired together in series and providing a source of photons;   a power circuit responsive to externally applied AC mains power and combined with said plurality of LED dies to provide energization thereof;   a quantum dot colour electrically conductive strip to emit a selected colour in response to a corresponding electric said signal applied thereacross.   
     
     
         8 . The COB (chip on board) LED (light emitting Diode) array apparatus as recited in  claim 3 , wherein said rectifier comprises a power supply capable of detecting the difference between 120 VAC and 240 VAC input voltage. 
     
     
         9 . The COB (chip on board) LED (light emitting Diode) array apparatus as recited in  claim 3 , further includes a second plurality of LED dies wired together in series on a common substrate with said first plurality of LED dies. 
     
     
         10 . The COB (chip on board) LED (light emitting Diode) array device means as recited in  claim 9 , wherein said first and said second pluralities of LED dies are parallel connected to accommodate the 120 VAC input voltage. 
     
     
         11 . The COB (chip on board) LED (light emitting Diode) array device means as recited in  claim 9 , wherein said first and said second pluralities of LED dies are series connected to accommodate the 240 VAC input voltage. 
     
     
         12 . The COB LED array apparatus of  claim 7 , wherein said power circuit further comprises at least one of
 a rectifier disposed on a substrate structure and in electrical communication therewith and providing a voltage derived from said power mains ultimately received by said first plurality of led dies,   a current limiting circuit in electrical communication with said disposed series wired first plurality of LED dies to limit the flow of current therethrough, and   a Metal Oxide Varistor (MOV) disposed on said substrate in electrical communication with said series wired LED dies and disposed to prevent, overvoltage damage to said first plurality of LED array dies.   
     
     
         13 . The COB LED array apparatus of  claim 7 , further comprising
 an enable circuit in electrical communication with said quantum dot colour electrically conductive strip and disposed on said substrate, selectively causes at least one of said quantum dot colour electrically conductive strip to emit a selected colour in response to electricity applied thereacross from said enable circuit.   
     
     
         14 . The COB LED array apparatus of  claim 13 , further comprising
 a variable intensity circuit disposed on said substrate and connected to said quantum dot electrically conducting strip to provide a selectable intensity light output, and   a microcontroller disposed on said substrate and in communication with said quantum dot electrically conductive strip via said enable circuit and said variable intensity circuit and being programmed to control said action of enabling and intensification of light output of said quantum dot colour electrically conductive strips.   
     
     
         15 . The COB LED array apparatus of  claim 14 , further comprising
 an ISM radio band receiver circuit, in communication with said microcontroller and in response to the reception of an ISM radio band signal having address, enabling, and intensity instruction signals for control of said enable circuit and said intensity circuit by said microcontroller.