US2017338080A1PendingUtilityA1

Apparatus and method for programmable spatially selective nanoscale surface functionalization

Assignee: PLASMOTICA LLCPriority: May 19, 2016Filed: Jun 22, 2017Published: Nov 23, 2017
Est. expiryMay 19, 2036(~9.8 yrs left)· nominal 20-yr term from priority
H01J 37/32733B01L 2300/1827H01J 37/3244B01J 2219/00869B01L 2300/0681B01J 2219/00781B01L 2300/0654G01N 1/38H01J 2237/334B01L 3/5027B01J 19/0093H01J 37/32366B01L 2300/0645B01L 3/502715B01L 2200/06B01L 2400/0688B01L 3/5023C12Q 1/6837H01J 2237/327H01J 37/3233H01J 37/3299B01L 3/502753B01F 33/3017
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Claims

Abstract

A spatially selective surface functionalization device configured to generate a pattern of micro plasmas and functionalize a substrate surface may include: a pattern management system, a patterning head, and a gas delivery system, wherein the gas delivery system provides a primed gas mixture for forming a plasma between the patterning head and a target substrate below the patterning head. A patterning head may generate a distribution of micro plasmas from individual directed beams of electrons with spatial separation. A pattern management system may store and manipulate information about a pattern of surface functionalization and generate instructions for regulating a distribution of micro plasmas that functionalize a substrate surface.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A device for spatially selective surface functionalization, comprising:
 a pattern management system;   a patterning head; and   a gas delivery system; wherein the patterning head is configured to generate a first distribution of micro plasmas against a top surface of a substrate according to a pattern stored in the pattern management system, wherein the first distribution of micro plasmas is formed in a gas mixture at least partially provided by the gas delivery system, the first distribution of micro plasmas corresponding to a first portion of the pattern.   
     
     
         2 . The device of  claim 1 , further comprising an instruction generator of the pattern management system connected to the patterning head and to the position regulation system by a communication bus, wherein
 the instruction generator is configured to generate at least a first instruction and a second instruction, and wherein   the patterning head is configured to generate
 the first distribution of micro plasmas at a first position on the top surface of the substrate according to the first instruction, and 
 a second distribution of micro plasmas at a second position on the top surface of the substrate according to the second instruction, wherein
 the second distribution of micro plasmas corresponds to a second portion of the pattern, the second portion being different from the first portion, and wherein the first position is different from the second position. 
 
   
     
     
         3 . The device of  claim 1 , wherein at least one of the first or second distribution of micro plasmas is formed from an array of electron emission structures of the electron source. 
     
     
         4 . The device of  claim 3 , wherein at least a first electron emission structure at a first location of the array and at least a second electron emission structure at a second location of the array are configured to be activated independently according to at least one instruction. 
     
     
         5 . The device of  claim 2 , wherein the electron emission structures comprise pyroelectric electron (PE) emission structures. 
     
     
         6 . The device of  claim 2 , wherein the electron emission structures comprise thermionic electron emission structures. 
     
     
         7 . The device of  claim 2 , wherein the electron emission structures comprise field emission (FE) electron emission structures. 
     
     
         8 . The device of  claim 4 , further comprising an electron emission structure activation element configured to receive at least one instruction and to activate or deactivate electron emission structures at locations in the array according to the at least one instruction. 
     
     
         9 . The device of  claim 2 , further comprising a pattern buffer configured to store at least a portion of the pattern, the instruction generator being configured to generate the instructions based on the stored portion of the pattern. 
     
     
         10 . The device of  claim 5 , further comprising an accelerating structure and a membrane of the electron source, wherein the accelerating structure is configured to direct a beam of electrons from the at least one electron emission structure at a location of the array toward the membrane, and wherein the membrane is configured to allow passage of the directed beam of electrons through the membrane into a working volume between the patterning head and the top surface of the substrate. 
     
     
         11 . The device of  claim 9 , further comprising a voltage regulator configured to apply a positive voltage to the accelerating structure. 
     
     
         12 . The device of  claim 10 , wherein the membrane is reinforced to withstand a pressure differential across the membrane between the first membrane face and the second membrane face. 
     
     
         13 . The device of  claim 1 , wherein the gas system comprises at least one orifice separate from the patterning head. 
     
     
         14 . The device of  claim 1 , wherein the gas system comprises at least one orifice configured to supply an atomized liquid to a working volume between the patterning head and a substrate. 
     
     
         15 . The device of  claim 7 , further comprising a vacuum source configured to form a pressure differential across the membrane, wherein the working volume contains the gas mixture at a first pressure and an interior of the electron has a second pressure smaller than the first pressure. 
     
     
         16 . The device of  claim 3 , wherein the plurality of electron emission structures include are conductive structures selected from the group consisting of nano rods, nanowires, carbon nanotubes, fullerene-like structures, tunneling cold field emitter cathodes, and pyroelectric material cathodes. 
     
     
         17 . The device of  claim 15 , wherein the plurality of electron emission structures includes conductive materials selected from the group consisting of silicon, silicon carbide, and carbon. 
     
     
         18 . The device of  claim 3 , wherein the electron emission structure includes a diode structure. 
     
     
         19 . The device of  claim 1 , wherein the electron emission structure includes a triode structure. 
     
     
         20 . A method of modifying a surface with a plasma, the method comprising:
 energizing a first set of individually addressable electron emission structures in an electron source, the electron source having a membrane with a first surface and a second surface;   creating a blend of gases in a working volume adjacent to the second surface of the membrane, the second surface being on an outer surface of the electron source;   accelerating electrons from the first set of individually addressable electron emission structures towards the membrane;   forming a first set of micro plasmas where the accelerated electrons from the first set of individually addressable electron emission structures intersects the blend of gases; and   adjusting a distance between a substrate and the second surface such that the first set of micro plasmas intersects a top surface of the substrate at a first location.   
     
     
         21 . The method of  claim 19 , further comprising energizing a second set of individually addressable electron emission structures to form a second set of micro plasmas that intersect the top surface of the substrate at a second location, wherein the first set of micro plasmas has a first distribution of intersection points with the top surface, the second set of micro plasmas has a second distribution of intersection points with the sop surface points, and the second distribution is different from the first distribution. 
     
     
         22 . The method  claim 20 , wherein, upon forming the second set of micro plasmas, functionalization of the top surface at the first distribution of intersection points with the top surface remains unchanged within an overlap area of the top surface, the first distribution of intersection points having a first perimeter on the top surface, the second distribution of intersection points having a second perimeter on the top surface, and the overlap area falling within the first perimeter and the second perimeter. 
     
     
         23 . The method of  claim 19  further comprising modifying a set of functional groups on the top surface of the substrate at the first distribution of intersection points or the second distribution of intersection points, and wherein the top surface outside the first and second distributions of intersection points does not undergo modifying a set of functional groups. 
     
     
         24 . The method of  claim 20 , further comprising modifying the first distribution of intersection points into the second distribution of intersection points while first set of micro plasmas intersects the top surface of the substrate, upon displacement of the substrate beneath the electron source. 
     
     
         25 . A method of making a plasma device having an electron source, comprising:
 forming, in the electron source, an array of individually addressable electron emission structures on an chip;   placing, in the electron source, an electron accelerating structure between the chip and a target substrate;   interconnecting the array of individually addressable electron emission structures with a power supply and the electron accelerating structure;   placing, in a wall of the electron source, a membrane configured to pass a directed beam of electrons;   positioning a nozzle of a gas delivery system to deliver a flow of gas into a working volume between the electron source and the target substrate; and   connecting a controller element to the power supply configured to regulate an electrical potential between the array of individually addressable electron emission structures and the electron accelerating structure.   
     
     
         26 . A arrangement of materials for generating spatially confined plasma beams, wherein the arrangement comprises of,
 an array of individually addressable nanostructures on a substrate,   an accelerating structure placed adjacent to the nanostructures,   an electrical connection between the nanostructures, a power supply, and the accelerating structure,   a membrane adjacent to the accelerating structure,   wherein the membrane has a first face and a second face,   at least one nozzle near the second face of the membrane,   wherein the nozzle allows for introducing gases forming a primed atmosphere near surface of the second face of the membrane,   wherein when a potential difference is applied between the accelerating structure and the nanostructure array at least one directional electron beam is generated,   wherein the directional electron beam penetrates through the membrane entering from the first face of the membrane and leaving through the second face of the membrane,   wherein when the directional electron beam strikes the primed atmosphere on the surface of the second face of the membrane a plasma beam is formed.

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