Method and apparatus for enhanced lifetime and performance of ion source in an ion implantation system

Abstract

An ion implantation system and process, in which the performance and lifetime of the ion source of the ion implantation system are enhanced, by utilizing isotopically enriched dopant materials, or by utilizing dopant materials with supplemental gas(es) effective to provide such enhancement.

1 - 21 . (canceled) 
     
     
         22 . A gas supply for an ion implantation system, comprising:
 (i) a first gas storage and dispensing vessel containing a dopant source gas including a dopant species, the first gas storage and dispensing vessel in fluid communication with a mixing region of the ion implantation system via a first dispensing line; and   (ii) a second gas storage and dispensing vessel containing supplemental gas including xenon gas and hydrogen gas, the second gas storage and dispensing vessel in fluid communication with the mixing region of the ion implantation system via a second dispensing line, wherein the mixing region is adapted for mixing the dopant gas and the supplemental gas to form a gas mixture for delivery to an ion source of the ion implantation system.   
     
     
         23 . The gas supply of  claim 22 , wherein the dopant source gas comprises a boron dopant species. 
     
     
         24 . The gas supply of  claim 22 , wherein the dopant source gas comprises a germanium dopant species. 
     
     
         25 . The gas supply of  claim 22 , wherein the dopant source gas comprises a silicon dopant species. 
     
     
         26 . The gas supply of  claim 22 , wherein the dopant species is isotopically enriched above a natural abundance level in at least one isotope. 
     
     
         27 . The gas supply of  claim 22 , wherein the dopant gas comprises boron trifluoride. 
     
     
         28 . The gas supply of  claim 22 , wherein the dopant gas comprises germanium tetrafluoride. 
     
     
         29 . The gas supply of  claim 22 , wherein the dopant gas comprises silicon tetrafluoride. 
     
     
         30 . The gas supply of  claim 22 , wherein the dopant source gas or the supplemental gas further comprises a co-species gas. 
     
     
         31 . The gas supply of  claim 30 , wherein the co-species gas comprises diborane. 
     
     
         32 . The gas supply of  claim 30 , wherein the co-species gas comprises germane. 
     
     
         33 . The gas supply of  claim 30 , wherein the co-species gas comprises silane. 
     
     
         34 . The gas supply of  claim 22 , wherein the first and second gas storage and dispensing vessels comprise at least one vessel containing a sorbent medium for adsorption storage and desorption dispensing of gas. 
     
     
         35 . The gas supply of  claim 22 , wherein the first and second gas storage and dispensing vessels comprise at least one vessel that is internally pressure-regulated. 
     
     
         36 . The gas supply of  claim 22 , further comprising a third gas storage gas storage and dispensing vessel, the third gas storage and dispensing vessel in fluid communication with the mixing region of the ion implantation system via a third dispensing line. 
     
     
         37 . The gas supply of  claim 36 , wherein the third gas storage and dispensing vessel contains a co-species gas. 
     
     
         38 . The gas supply of  claim 36 , wherein the second gas storage and dispensing vessel contains xenon gas and the third gas storage and dispensing vessel contains hydrogen gas. 
     
     
         39 . A method for enhancing operation of an ion implantation system comprising:
 delivering a dopant source gas and a supplement gas from the gas supply according to claim  1  to a mixing chamber of the ion implantation system to form a gas mixture;   generating ionic dopant species from the gas mixture at an ion source of the ion implantation system; and   implanting the ionic dopant species in a substrate.   
     
     
         40 . The method of  claim 39 , further comprising monitoring cathode bias power during operation of the ion source, and in response to the monitored cathode bias power, monitoring at least one of the dopant source gas and the supplemental gas delivered to the mixing chamber. 
     
     
         41 . The method of  claim 39 , wherein the supplemental gas is effective in mixture with the dopant gas to improve the lifetime and performance of the ion source as compared to a corresponding gas mixture lacking the supplemental gas.