Lanthanated tungsten ion source and beamline components

Abstract

An ion implantation system is provided having one or more conductive components comprised of one or more of lanthanated tungsten and a refractory metal alloyed with a predetermined percentage of a rare earth metal. The conductive component may be a component of an ion source, such as one or more of a cathode, cathode shield, a repeller, a liner, an aperture plate, an arc chamber body, and a strike plate. The aperture plate may be associated with one or more of an extraction aperture, a suppression aperture and a ground aperture.

1 . A conductive component for an ion implantation system, wherein the conductive component is comprised of one or more of lanthanated tungsten and a refractory metal alloyed with a predetermined percentage of a rare earth metal, and wherein the conductive component is generally passivated during operation of the ion implantation system. 
     
     
         2 . The conductive component of  claim 1 , wherein the conductive component is a component of an ion source. 
     
     
         3 . The conductive component of  claim 2 , wherein the conductive component comprises one or more of a cathode, cathode shield, a repeller, a liner, an aperture plate, an arc chamber body, and a strike plate. 
     
     
         4 . The conductive component of  claim 3 , wherein the liner comprises an ion source liner. 
     
     
         5 . The conductive component of  claim 3 , wherein the aperture plate is associated with one or more of an extraction aperture, a suppression aperture and a ground aperture. 
     
     
         6 . The conductive component of  claim 3 , wherein the conductive component comprises between 1% and 3% lanthanum. 
     
     
         7 . An ion implantation system comprising a conductive component, wherein the conductive component is comprised of one or more of lanthanated tungsten and a refractory metal alloyed with a predetermined percentage of a rare earth metal. 
     
     
         8 . The ion implantation system of  claim 7 , wherein the conductive component comprises one or more of a cathode, cathode shield, a repeller, a liner, an aperture plate, an arc chamber body, and a strike plate. 
     
     
         9 . The ion implantation system of  claim 8 , wherein the liner comprises an ion source liner. 
     
     
         10 . The ion implantation system of  claim 8 , wherein the aperture plate is associated with one or more of an extraction aperture, a suppression aperture and a ground aperture. 
     
     
         11 . The ion implantation system of  claim 7 , wherein the conductive component is positioned upstream of a mass analyzer. 
     
     
         12 . The ion implantation system of  claim 7 , wherein the conductive component is generally passivated during operation of the ion implantation system. 
     
     
         13 . The ion implantation system of  claim 7 , wherein the conductive component comprises between 1% and 3% lanthanum.